1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 31.7 dB at 950 MHz
Output power at 1 dB gain compression = 10 dBm at 950 MHz
Supply current = 24.0 mA at a supply voltage of 5.0 V
Reverse isolation > 39 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.1 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2869
MMIC wideband amplifier
Rev. 2 — 26 August 2013 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
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Product data sheet Rev. 2 — 26 August 2013 2 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Tabl e 2. Ordering information
Type number Package
Name Description Version
BGA2869 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2869 MD* * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage RF input AC coupled 0.5 +7.0 V
ICC supply current - 36 mA
Ptot total power dissipation Tsp = 90 C-200mW
Tstg storage temperature 40 +125 C
Tjjunction temperature - 125 C
Pdrive drive power - 19 dBm
Table 5. Thermal characteris tics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to
solder point Ptot = 200 mW; Tsp =90C 300 K/W
Table 6. Characteristics
VCC = 5.0 V; ZS = ZL = 50
; Pi =
34 dBm; Tamb = 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage 4.5 5.0 5.5 V
ICC supply current 21.8 24.0 26.0 mA
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Product data sheet Rev. 2 — 26 August 2013 3 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
Gppower gain f = 250 MHz 30.5 31.1 31.7 dB
f = 950 MHz 31.0 31.7 32.4 dB
f = 2150 MHz 30.7 32.2 33.6 dB
RLin input return loss f = 250 MHz 12 14 16 dB
f = 950 MHz 161820dB
f = 2150 MHz 7 13 20 dB
RLout output return loss f = 250 MHz 10 15 19 dB
f = 950 MHz 202122dB
f = 2150 MHz 8 10 13 dB
ISL isolation f = 250 MHz 41 61 81 dB
f = 950 MHz 464749dB
f = 2150 MHz 37 39 42 dB
NF noise figure f = 250 MHz 2.6 3.1 3.6 dB
f = 950 MHz 2.6 3.1 3.5 dB
f = 2150 MHz 2.8 3.2 3.6 dB
B3dB 3 dB bandwidth 3 dB below gain at 1 GHz 2.8 3.0 3.2 GHz
K Rollett stability factor f = 250 MHz 9 14 19
f = 950 MHz 2 3 4
f = 2150 MHz 1 1 2
PL(sat) saturated output power f = 250 MHz 12 12 13 dBm
f = 950 MHz 101213dBm
f = 2150 MHz 9 10 11 dBm
PL(1dB) output power at 1 dB gain compression f = 250 MHz 9 10 11 dBm
f = 950 MHz 9 10 11 dBm
f = 2150 MHz 8 9 10 dBm
IP3Iinput third-order intercept point Pdrive =41 dBm (for each tone)
f1= 250 MHz; f2= 251 MHz 11 96dBm
f1= 950 MHz; f2= 951 MHz 11 97dBm
f1=2150MHz; f
2=2151MHz 16 13 10 dBm
IP3Ooutput third-order intercept point Pdrive =41 dBm (for each tone)
f1= 250 MHz; f2=251MHz 202325dBm
f1= 950 MHz; f2=951MHz 202325dBm
f1=2150MHz; f
2= 2151 MHz 16 19 22 dBm
PL(2H) second harmonic output power Pdrive =38 dBm
f1H = 250 MHz; f2H =500MHz 69 67 65 dBm
f1H = 950 MHz; f2H =1900MHz 53 51 49 dBm
IM2 second-order intermodulation distance Pdrive =38 dBm (for each tone)
f1= 250 MHz; f2=251MHz 404244dBc
f1= 950 MHz; f2=951MHz 343638dBc
Table 6. Characteristics …continued
VCC = 5.0 V; ZS = ZL = 50
; Pi =
34 dBm; Tamb = 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 4 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2869 MMIC. The device is
internally matched to 50 , and therefore does not need any externa l matching. The value
of the input and outpu t DC blocking cap acitors C1 and C2 should not be m ore than 470 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The location of the 470 pF supply d ecoupling cap acito r (Cdec) can b e precisely chosen for
optimum performance.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
8.1 Application examples
8.2 Tables
Fig 1. Typical application circuit
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The MMIC is very suitable as IF amplifier in e.g. LNB’s.
The excellent wideband characteristics make it an easy
building block.
As second amplifier after an LNA, the MMIC offers an
easy matching, low noise solution.
Fig 2. Application as IF amplifier Fig 3. Application as RF amplifier
001aaf762
from RF
circuit
oscillator
wideband
amplifier to IF circuit
or demodulator
mixer
001aaf763
antenna
oscillator
wideband
amplifier
LNA to IF circuit
or demodulator
mixer
Table 7. Supply current over temp erature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
ICC supply current VCC = 4.5 V 23.60 21.80 20.30 mA
VCC = 5.0 V 25.80 24.00 22.40 mA
VCC = 5.5 V 27.80 26.00 24.50 mA
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 5 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
Table 8. Second harmonic outp ut p ower over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
PL(2H) second harmonic output power f = 250 MHz; Pdrive =38 dBm
VCC = 4.5 V 58 67 68 dBm
VCC =5.0V 72 67 61 dBm
VCC =5.5V 64 60 58 dBm
f = 950 MHz; Pdrive =38 dBm
VCC = 4.5 V 69 55 50 dBm
VCC =5.0V 55 51 48 dBm
VCC =5.5V 51 49 46 dBm
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
Pi(1dB) input power at 1 dB gain compression f = 250 MHz
VCC = 4.5 V 21 21 21 dBm
VCC =5.0V 20 20 20 dBm
VCC =5.5V 19 20 20 dBm
f = 950 MHz
VCC = 4.5 V 21 21 21 dBm
VCC =5.0V 21 21 21 dBm
VCC =5.5V 20 20 20 dBm
f = 2150 MHz
VCC = 4.5 V 22 22 23 dBm
VCC =5.0V 21 22 23 dBm
VCC =5.5V 21 22 24 dBm
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 6 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
Table 10. Output power at 1 dB gain compress ion over temperature and sup ply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
PL(1dB) output power at 1 dB gain compression f = 250 MHz
VCC = 4.5 V 9 9 8 dBm
VCC =5.0V 11 10 10 dBm
VCC =5.5V 12 11 11 dBm
f = 950 MHz
VCC = 4.5 V 9 8 8 dBm
VCC =5.0V 10 10 9 dBm
VCC =5.5V 11 11 10 dBm
f = 2150 MHz
VCC = 4.5 V 9 8 6 dBm
VCC =5.0V 10 9 7 dBm
VCC =5.5V 11 9 7 dBm
Table 11. S aturated output power over temp erature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
PL(sat) saturated output power f = 250 MHz
VCC = 4.5 V 11 11 10 dBm
VCC =5.0V 13 12 12 dBm
VCC =5.5V 14 13 13 dBm
f = 950 MHz
VCC = 4.5 V 11 11 11 dBm
VCC =5.0V 12 12 12 dBm
VCC =5.5V 14 13 13 dBm
f = 2150 MHz
VCC = 4.5 V 10 9 8 dBm
VCC =5.0V 11 10 8 dBm
VCC =5.5V 12 10 9 dBm
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 7 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
IM2 second-order intermodulation distance f1=250MHz;
f2=251MHz;
Pdrive =38 dBm
VCC = 4.5 V 36 39 42 dBc
VCC =5.0V 40 42 45 dBc
VCC =5.5V 43 45 48 dBc
f1=950MHz;
f2=951MHz;
Pdrive =38 dBm
VCC = 4.5 V 33 34 36 dBc
VCC =5.0V 35 36 37 dBc
VCC =5.5V 37 37 37 dBc
Table 13. Output third-orde r intercept point over temperatu re and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
IP3Ooutput third-order intercept point f1=250MHz;
f2=251MHz;
Pdrive =41 dBm
VCC =4.5 V 21 21 20 dBm
VCC =5.0V 23 23 22 dBm
VCC =5.5V 25 25 24 dBm
f1=950MHz;
f2=951MHz;
Pdrive =41 dBm
VCC =4.5 V 21 21 20 dBm
VCC =5.0V 23 23 22 dBm
VCC =5.5V 25 24 23 dBm
f1=2150MHz;
f2=2151MHz;
Pdrive =41 dBm
VCC =4.5 V 21 19 17 dBm
VCC =5.0V 22 19 17 dBm
VCC =5.5V 22 20 17 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions Tamb (C) Unit
40 +25 +85
B3dB 3 dB bandwidth VCC = 4.5 V 3.15 2.98 2.80 GHz
VCC = 5.0 V 3.14 2.96 2.79 GHz
VCC = 5.5 V 3.12 2.95 2.77 GHz
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 8 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
9. Test information
[1] For decoupling a decoupling capacitor (Cdec) is used on one of the positions of P5 to P24. The results
mentioned in this data sheet have been obtained using the decoupling capacitor Cdec on position P22.
For decoupling a decoupling capacitor (Cdec) is used on one of the positions of P5 to P24. The
results mentioned in this data sheet have been obtained using the decoupling capacitor Cdec on
position P22. The distance between the center of pin 1 and the center of position P22 is 7.43 mm.
Fig 4. PCB layout and demo board with compo nents
Table 15. List of components used for the typical application
Component Description Value Dimensions Remarks
C1, C2 multilayer ceramic chip
capacitor 470 pF 0603 X7R RF coupling capacitor
P5 to P24 [1] position for multilayer
ceramic chip capacitor Cdec
470 pF 0603 X7R RF decoupling capacitor
IC1 BGA2869 MMIC - SOT363
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BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 9 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
10. Package outline
Fig 5. Package outline SOT363
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
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Product data sheet Rev. 2 — 26 August 2013 10 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
11. Abbreviations
12. Revision history
Table 16. Abbreviations
Acronym Description
IF Intermediate Frequency
LNA Low-Noise Amplifier
LNB Low-Noise Block converter
PCB Printed-Circuit Board
SMD Surface Mounted Device
Table 17. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGA2869 v.2 20130826 Product data sheet - BGA2869 v.1
Modifications: Table 4 on page 2: the maximum value for VCC has been changed to 7 V
BGA2869 v.1 20120717 Product data sheet - -
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Product data sheet Rev. 2 — 26 August 2013 11 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificat ion The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
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responsibility for the content in this document if provided by an inf ormation
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
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notice. This document supersedes and replaces all informa tion supplied prior
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inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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agreed in a valid written individua l agreement. In case an individual
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conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
BGA2869 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 26 August 2013 12 of 13
NXP Semiconductors BGA2869
MMIC wideband amplifier
Export control — This document as well as the item(s) described herein
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BGA2869
MMIC wideband amplifier
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 August 2013
Document identifier: BGA2869
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Application examples . . . . . . . . . . . . . . . . . . . . 4
8.2 Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13