Rev. 1.1 2/03 Copyright © 2003 by Silicon Laboratories Si30xxSSI-EVB-11
Si30xxSSI-EVB
Evaluation Board For the Si30xx with the
Standard Serial Interface
Overview
The Si30xxSSI-EVB provides the modem system designer
an easy way to evaluate the Si30xx solution. Silicon Labs’
DAAs are integrated direct access arrangements that
provide a digital, low-cost, solid state interface to FCC-
compliant or worldwide telephone lines. Through the
patented ISOcapTM technology, the Si30xx eliminates the
need for an analog front end (AFE), an isolation
transformer, relays, opto-isolators, and a 2- to 4-wire
hybrid.
The evaluation board (EVB) provides an RJ-11
connector and a 10-pin stake header for connecting the
designer’s target modem DSP or ASIC through the
Si30xx to the phone line. This arrangement allows for a
straightforward comparison of the existing modem’s
AFE and DAA to the innovative Si30xx. In addition, two
10-pin headers are available for easy evaluation of the
daisy-chainin g fe at ur e.
Power is supplied through two terminal blocks, VD and
VA. This allows for 5 V or 3.3 V operation of the
evaluation board. The Si30xxSSI-EVB supports a
connection for an optional call progress speaker.
Features
The Si30xxSSI-EVB includes the following:
RJ-11 connection to phone line
Buffered digital I/O interface to DSP or ASIC
Recommended layout for key components
Connection for an optional call progress speaker
Easy power connection for 5 V or 3.3 V operation
Flexible MCLK scheme
User selectable serial mode
Support for daisy chain operation
Motherboard–daughter card connection
Function Block Diagram
Line
Side Phone
Line
Digital
I/O RJ-11
Modem
DSP or
ASIC
VD Supply
VA
Supply
Interface
Circuitry
System
Side
Speaker
Driver
Daughter Card
To
Master
Board
To
Slave
Board
Si30xxSSI-EVB
2 Rev. 1.1
Functional Description
The Si30xxSSI-EVB provides an easy way to evaluate
the Si30xx solution. The evaluation board provides an
RJ-11 connector and a 10-pin stake header for
connecting a target modem DSP or ASIC through the
Si30xx to the phone line. This arrangement allows for a
straightforward comparison of the existing modem’s
AFE and DAA to the innovative Si30xx.
This Si30xx chipset also supports the connection of
multiple devices on a single serial interface. The
evaluation board provides a straightforward means of
evaluating this feature.
The evaluation board consists of the Si30xxSSI-EVB
motherboard and the Si30xx DC-EVB daughter card.
The Si30xxSSI-EVB can be used with other Silicon
Laboratories daughter cards, such as the Si3000DC-
EVB. Contact a Silicon Laboratories representative for
more information.
Motherboard–Daughter Card Connection
The Si30xx DC-EVB connects to the Si30xxSSI-EVB
through two sockets, JP1 and JP2.
JP1 is a 3x8 socket connection to the digital signals of
the system side, as well as the AOUT. In addition, the
VD power of the Si30xxSSI-EVB (J2) is routed to this
socket and supplies the power to the system side. JP1
connects to JP7 of the Si30xxSSI-EVB.
JP2 is a 2x5 socket connection to the TIP and RING
and chassis ground of the line interface to the line side.
JP2 connects to JP8 of the Si30xxSSI-EVB.
Power Supply
Power is supplied to the EVB by means of J2 and J3
when the board is used in stand-alone mode. If multiple
boards are cascaded together, refer to “Daisy-Chain
Operation” for the power supply requirements.
J2 and J3 are euroblock headers which allow for
connection to a bench power supply. J2 provides the
power for all devices connected to the VD node. J3
provides the power for the VA node.
When using an Si3034/35/44 daughter card, J2 can
nominally be 3.3 V or 5 V. If VD = 3.3 V, then R3 (of the
Si30xx DC-EVB) should be removed, and the CPE bit of
register 6 should be set. U3 and U4 can operate from
either 3.3 V or 5 V. If Y1 is used, it must support 3.3 V
operation. When using an Si3056 daughter card, J2
should only be connected by a 3.3 V supply.
J3 must be nominally 5 V. This connector provides the
supply to the analog speaker section. Pin 13 (VA) of U1
does not connect to this supply.
Diodes D4 and D5 are used to protect the EVB against
over-voltage or accidental terminal reversal. They are
rated at 6.8 V.
Clock Generation
The system side requires an MCLK input. The
Si30xxSSI-EVB provides two options for this
requirement. MCLK can be provided via pin 1 of JP4
from the target system or from an oscillator installed in
Y1. JP3 selects the MCLK source to the system side. In
the Y1 position, the oscillator installed in Y1 is
connected. If 3.3 V is the VD supply, Y1 must be a 3.3 V
oscillator. In the JP4 position, the clock on JP4 is
connected. Valid MCLK frequencies range from 1 to
60 MHz.
If multiple boards are cascaded together, refer to the
section on daisy-ch ain oper ation. Only th e master board
needs an MCLK from Y1 or JP4.
Optional Call Progress Speaker
The AOUT pin of the system side provides monito ring of
call progress. U5 provides 25 dB of signal gain on this
output. The AOUT pin has an output impedance of
10 k. R15 and R19 form a volt age divider that provides
a gain of –24.4 dB. This divider is necessary so the
LM386, which is operating from a 5 V supply, is not
overdriven.
The LM386 is a cost-effective low-power amplifier
capable of driving many different buzzers or speakers.
In the case of cascaded evaluation boards, the AOUT
signal is local to each board.
Reset Circuit
The Si30xx requires an active low pulse on RST
following power up and whenever all registers need to
be reset. Typically, the target system generates this
signal and supplies it on pin 9 of JP4. For development
purposes, the Si30xxSSI-EVB includes a reset push
button, SW1, that is a logic OR (active low) with the
reset signal from the target system. U4 provides the
reset logic and serves as a buffer. This circuit is not
necessary in a production desig n.
If multiple boards are cascaded together, the reset
signal should be generated by the master board. Using
the SW1 pushbutton on slave boards will only reset that
slave board and slave boards further down the chain.
Serial Modes
The Si30xx supports two different serial modes for a
glueless interface to many standard DSP and ASIC
serial ports. The serial mode of the Si30xx can be
selected by JP1 and JP2.
Si30xxSSI-EVB
Rev. 1.1 3
The default mode is FSYNC frames data.
The FC signal on JP4 is tied to ground through a 47 k
resistor (R29). If FC is used in the system, this resistor
must be removed.
Several additional signals are required for proper
operation of the serial interface. As mentioned in the
clock generation section, an MCLK must be pr ovided for
the Si30xx to operate.
FSYNC, SCLK, SDI and SDO are also required signals
to operate the Si30xx. FSYNC provides the
synchronization for the modem samples. This signal
operates at the sample rate. A high to low transition
marks the beginning of a new frame.
SCLK is an output of the Si30xx providing the bit clock
for the modem sa mples. Dat a is valid on th e falling edg e
of SCLK following an FSYNC start transition. SDI
consists of modem samples to be transmitted down the
phone line, and SDO consists of modem samples from
the down-line sys te m.
The serial port sig nals are a lso used dur ing a seconda ry
frame to read and write the internal registers of the
Si30xx. Refer to the Si30xx data sheet for more details
on internal registers and how to read and write those
registers.
When using the board in stand-alone mode (single),
SW2 = 1 and SW3 = 1. Figure 1 shows a typical
configuration in stand-alone mode.
Figure 1. Stand-Alone Connections
Daisy-Chain Operation
The Si30xx supports an additional serial mode which
places the device in a slave mode. This serial mode is
accomplished by M1 = VD and M0 = GND.
The Si30xxSSI-EVB can essentially be used in three
modes: stand-alone (single), master, and slave. Table 2
shows the configurations necessary for each mode.
In addition to JP1 and JP2 (which control the serial
mode of the local system side), SW2 and SW3 are used
to route the digital signals to ensure proper connection.
Multiple Si30xxSSI-EVBs can be connected through
JP5 and JP6. Figure 2 shows the connection of three
Si30xxSSI-EVBs in daisy-chain mode.
Table 1. Si30xx Serial Modes
M1 M0 Mode
GND GND FSYNC frames data, Master
GND VDFSYNC pulse starts data
frame, Master
VDGND Slave Operation
VDVDReserved
To DSP
Phone
Line
Power
Supply
OSC VA
VD
Y1
JP5
JP6
JP3
JP4
RJ11
M1 M0
SW2
SW3
12
21
Table 2. Si30xxSSI-EVB Modes
Configuration SW2 SW3 M1 M0
Single 1 1 GND X
Master 1 2 GND VD
Slave 2 2 VDGND
Si30xxSSI-EVB
4 Rev. 1.1
Figure 2. Daisy-Chain Connections
The DSP or ASIC connects directly to the master boar d.
Only the master board needs a connection to a power
supply. VD and VA are routed through JP5 and JP6.
When the Si30xxSSI-EVB is used as a master board,
the serial mode mu st be M 1 = GND and M0 = VD. When
the Si30xxSSI-EVB is used as a slave board, the serial
mode must be M1 = VD and M0 = GND. Be sure to
configure SW2 and SW3 appropriately according to
Table 2.
A test point, RGDT, near JP4 has been provided on
each Si30xxSSI-EVB to provide easy access to the
local ring detect signal of the system side. The ring
detection signal is also reflected in the SDO stream
from each system side.
Line Connection
J1 is provided to connect to a standard RJ-11
connector. The system cannot execute an off-hook
without the phone line connected. This error condition
can be detected by examining the FDT bit of
Register 12 or by simply observing there is no dial tone
to the DSP or ASIC.
To DSP
Phone
Line
Power
Supply
OSC VA
VD
Y1
JP5
JP6
JP3
JP4
RJ11
M1 M0
SW2
SW3
12
21
Phone
Line 2
JP5
JP6
JP4 RJ11
M1 M0
SW2
SW3
12
21
Phone
Line 3
JP5
JP6
JP4 RJ11
M1 M0
SW2
SW3
12
21
Master Board
Slave Board
Slave Board
Si30xxSSI-EVB
Rev. 1.1 5
Note 1: This design targets two basic builds:
- An FCC and JATE compliant design using the Si3035 chipset.
- A worldwide design using the Si3044 chipset.
Note 2: R12, R13 and C14 are only required if complex AC
termination is used (ACT bit = 1).
Decoupling cap for U1 VA
Decoupling cap for U1 VD
No Ground Plane In DAA Section
Note 3: See "Ringer Impedance" section for optional Czech
Republic support.
Note 4: See "Billing Tone Detection" section for optional billing
tone filter (Germany, Switzerland, South Africa).
Note 5: See Appendix for applications requiring UL 1950 3rd
edition compliance.
Note 7: R27 should be 10 ohms when using an Si3021 Rev A or
Rev B. It may be populated with a 0 ohm resister when using the
Si3021 Rev C or later.
Note 6: For Si3035 designs R29 is populated with a 0 ohm resistor
and R30 is not installed. For Si3044 designs R29 is not installed
and R30 is populated with a 0 ohm resistor.
See Note 6
FC
SDI
SDO
SCLK
FSYNCb
AOUT
MCLK
RESETb
OFHKb
RING
TIP
RGDTb
M0
M1
VCC
RV2
D3
BAV99
Q3
D4
BAV99
R10
C30
D1
L2
RV1
U2
Si3012/5
1
2
3
4
5
6
7
8 9
10
11
12
13
14
15
16
TSTA/QE2
TSTB/DCT
IGND
C1B
RNG1
RNG2
QB
QE VREG
NC/VREG2
NC/REF
DCT/REXT2
REXT
RX
NC/FILT
TX/FILT2
U1
Si3021
1
2
3
4
5
6
7
8 9
10
11
12
13
14
15
16
MCLK
FSYNC
SCLK
VD
SDO
SDI
FC
RESET AOUT
M1
C1A
GND
VA
M0
RGDT
OFHK
Z4
R19
R16
FB1
R17
FB2
R9
Z5
R3
NI
+
C23
R11
+
C5
R28
R6
C16
Q1
R27
R5
D2
C4
R12
R29
C13
R18
R30
R1
R4
C18
R2
R25
C10
C20
Q2
C1
C19 R26
R13
C3
Z1
C22
+
C14
R8
C25
R21
R7
R23
C7
R15
L1
C29
C24
C9
R24
C11
C8
Q4
R22
C28
+
C12
C6
Figure 3. Si3034/35/44DC-EVB Schematic (1 of 2)
Si30xxSSI-EVB
6 Rev. 1.1
12 3
456
78 9
10 11 12
13 14 15
16 17 18
19 20 21
22 23 24
Footprint of JP1
Top View
TIP RING
RGDTb
OFHKb
MCLK
SDI
SCLK
SDO
FC
AOUT
RESETb
M1
M0
FSYNCb
VCC
JP1
CON24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
JP2
HEADER 5X2
12
34
56
78
910
Figure 4. Si3034/35/44DC-EVB Schematic (2 of 2)
Si30xxSSI-EVB
Rev. 1.1 7
Bill of Materials: Si3034-EVB Daughter Card
Quantity Reference Part
2 C4,C1 150 pF, 3 k V, ±2 0%, 1812, , C1808 X7R302-151MNE , Venkel
1 C3 0.22 uF , 25 V, ±20%, 0805 , , C0805X7R250-224MNE, Venkel
1 C5 0.1 uF, 50 V, ± 20 %, Case A, , TA05 0T CM10 4-MA L, Venk el
3 C6,C10,C16 0.1 uF, 16 V, ± 10 % , 0603, , C0603X7R160-104KNE, Ve nkel
2 C7,C8 560 pF, 250 V , ±10% , 0805, , C0805X7R251-561 KNE, Venkel
1 C9 10 nF, 250 V, ±20%, 080 5, , C0805X7R251-103K NE, Ve nk e l
4 R4,C11,R21,C30 NI, , , 0603, , ,
1 C12 0.22 uF , 3 5 V, ±10%, Cas e A, , TA 0 35TCM224-KA L, Venkel
1 C13 0.47 uF , 2 5 V , ± 1 0%, 0805 , , C08 05 X7R250-474KNE, Venkel
1 C14 0.68 uF , 1 6 V, ±10%, 1206 , , 1206Y C 6 84 K A TMA, A VX
2 C18,C19 3.9 nF, 16 V, ± 10 %, 0603, , C0603X7R160-3 92 KNE, V e nkel
1 C20 0.01 uF , 1 6 V , ± 2 0%, 0603 , , C06 03 X7R160-103KNE, Venkel
1 C22 1800 pF, 50 V, ± 10 % , 0603, , C0603X7R500-182 KNE, Venkel
1 C23 NI, , , Case A, , ,
2 C24,C25 1000 pF, 3 kV, ± 10 % , 1812, , C1808X7R302-102K NE, V enkel
4 R22,R23,C28,C29 NI, , , 0805, , ,
2 D1,D2 Dual Diode, 225 mA, 300 V, SOT-23, , CMPD2004S, Central Semiconduct or
2 D3,D4 BAV99, 300 mA, 100 V, SOT-23, , BAV99, Diodes Inc.
2 FB1,FB2 Ferrite Bead, , , 1206, , BLM31A601S, Murata
1 JP1 CON24, , , 8x3 100 mil, , SSW-1 08-0 1-T-T,
1 JP2 HEADER 5X2, , , 5x2 100 mil, , SSW-10 5-01 -T-D,
2 L2,L1 330 uH, 150 mA, , Thru Hol e, , EL0607-3 31 J , TDK
2 Q3,Q1 NPN, 300 V , , SOT-23 , , MMBTA42LT 1 , Mot o rol a
1 Q2 PNP, 300 V, , SOT-23, , MMBTA92LT1, Motorola
1 Q4 NPN, 80 V, , SOT-223, , BCP56T1, Motorola
1 RV1 SiDactor, 275 V, 100 A, SOD 6, , P3100SB, Teccor
1 RV2 NI, , , Thru-Hole, , ,
1 R1 NI, , , 2010, , ,
1 R2 402, 1/ 8 W, ±1%, 1206, , CR1206-8W-4020FT , Venk e l
1 R3 NI, , , 0805, , , Venkel
1 R5 36 K, 1/16 W, ± 5%, 0603, , CR0603-1 6W-363J T, Venkel
1 R6 120 K, 1/16 W, ±5%, 0603, , CR0603-16W-124JT, Venkel
6 R7,R8, R1 5,R16,R17,R19 4.87 K, 1/4 W, ±1%, 1206 , , CR1206-4W-4871F T, Venkel
2 R10,R9 56 K, 1/10 W, ± 5%, 0805, , CR0805-1 0W-563J T, Venkel
1 R11 10 K, 1/10 W, ± 1%, 0603 , , CR06 03 -16W-1002FT, Ve nk e l
1 R12 78.7, 1/16 W, ±1%, 0603 , , CR0603-16W-78R7F T , Venk e l
1 R13 215, 1/ 16 W, ±1%, 0603, , CR0603-16W-2150FT, Ve nk e l
1 R18 2.2 K, 1/10 W, ±5% , 0805, , CR0805-10W-222JT, Ve nkel
1 R24 150, 1/ 10 W, ±5%, 0603 , , CR0603-10W-150J T , Venkel
2 R25,R26 NI, , , 0805, , ,
2 R28,R27 10, 1/10 W, ±5%, RC05, , CR0805-10W-100JT, Venkel
1 R29 NI, , , 0603, , ,
1 R30 0, 1/10 W, ±5%, 0603, , CR0603-10W-000JT, Ve nkel
1 U1 Si3021, , , 16SOIC, , Si3021 -K S Rev. C, Silico n La bs
1 U2 Si301x, , , 16 SOIC, , Si3014-KS Rev. C, S ilico n La bs
1 Z1 Zener Diode, 43 V, , SOD-80, , ZMM43, General Semi
2 Z4,Z 5 Zener Diode, 5.6 V, 500 mW, SOD123 , , MMSZ5232B , Diodes I n c .
Si30xxSSI-EVB
8 Rev. 1.1
Bill of Materials: Si3035-EVB Daughter Card
Quantity Reference Part
2 C4,C1 150 pF, 3 k V , ±20%, 1812, , C1808X7R302-151MNE , Venk el
1 C3 0.22 uF, 25 V, ±2 0%, 0805, , C0805X7R250-224MNE, Ve nkel
1 C5 1.0 uF, 16 V, ±20%, Case A, , TA016TCM105-MAL, Venkel
3 C6,C10,C1 6 0.1 uF, 16 V , ±10%, 0603, , C06 03X7R160-104K NE, Ve nkel
6 R3,C7,C8,C13,R25,R26 NI, , , 0805, , ,
3 C9,C28,C2 9 15 nF, 250 V , ±20% , 0805 , , C0805X7R251-153KNE, Venkel
1 C11 39 nF, 16 V , ± 1 0%, 0603, , C0603X7R160-393KNE , V enkel
1 C12 NI, , , Case A, , ,
7 R7,R8,C14,R15,R16,R17, NI, , , 1206, , ,
R19
9 R12,R13, C18,C19,C20 , C22, NI, , , 060 3, , ,
R24,R30,C30
1 C23 NI, 35V , ±10%, Case A , , T A 0 35T CM105-KAL, V e nkel
2 C24,C25 1000 pF, 3 kV, ±10%, 1812, , C1808X7R302-102KNE, Venkel
2 D1,D2 Dual Diode, 225 mA, 300 V, SOT -23 , , CMPD2004S , Cent ra l S emiconduc t or
2 D3,D4 BAV99 , 3 00 mA, 10 0 V , SOT-23, , B A V 99, Diodes I nc.
2 FB1, F B 2 Ferrite Bead, , , 1206, , BLM31A601S , MuRata
1 JP1 CON24, , , 8x3 100 mil, , S SW-108- 01-T -T ,
1 JP2 HEADER 5X2, , , 5x2 100 m il, , S SW-105-0 1-T -D,
2 L2,L1 0 ohm ,, , Thr u Hol e, , Wire Jumper
2 Q3,Q1 NPN, 300 V , , SOT-23, , MMBTA 42L T 1, Mot orol a
1 Q2 PNP, 300 V, , S OT -23 , , MMBTA92LT 1, Motorol a
1 Q4 NI, , , SOT-223, , ,
1 RV1 SiDactor, 275 V , 100 A, S OD 6, , P310 0S B, Te ccor
1 RV2 MOV, 240 V , 1250 A, Th ru-Ho le, , E RZ-V07D241, P a nasonic
1 R1 51, 1/2 W, ±5 % , 2010, , C201 0-2W-510JT, V enkel
1 R2 15, 1/4 W, ±5 % , 1206, , CR120 6-4W-150JT, V enkel
2 R4,R21 301, 1/1 6 W, ±1%, 0603, , CR0603-16W-3010FT, Venke l
2 R6,R5 36 K, 1/ 16 W, ±5%, 0603, , CR0603-16W-363J T , Venkel
2 R10,R9 2 K, 1/ 10 W, ± 5 % , 080 5, , CR0805-10W-202J T , Venk el
1 R11 NI, 16 V , ± 1 0%, 0603, , C0603X7R160-272KNE, Venk e l
1 R18 300, 1/1 0 W, ±5%, 0805, , CR0805-10W-301JT , V enkel
2 R23,R22 20 K, 1/ 10 W, ±5%, 0805, , CR0805-10W-203J T , Venkel
2 R28,R27 10, 1/10 W, ±5% , RC05, , CR0805- 10W-100J T , V e nkel
1 R29 0, 1/10 W, ± 5% , 0603, , CR0603-10 W-000J T , V en kel
1 U1 Si3021, , , 16SO I C, , Si 302 1-KS Rev. C, S i l icon Labs
1 U2 Si3012/5, , , 16SOIC, , Si3012-KS Rev. G, Silicon Labs
1 Z1 Zener Diode, 18 V , , SOD-80, , ZMM18, G ene ral S e mi
2 Z4,Z 5 Zener Diode, 5.6 V, 50 0 mW, SOD123 , , MMSZ 523 2B , Ge ner al S e mi
Si30xxSSI-EVB
Rev. 1.1 9
Bill of Materials: Si3044-EVB Daughter Card
Quantity Reference Part
2 C4,C1 150 pF, 3 kV, ±20%, 1812, , C1808X7R302-151MNE, Venkel
1 C3 0.22 uF, 25 V, ±20%, 0805, , C0805X7R250-224MNE, Venkel
1 C5 0.1 uF, 50 V, ±20%, Case A, , TA050TCM104-MAL, Venkel
3 C6,C10,C16 0.1 uF, 16 V, ±10%, 0603, , C0603X7R160-104KNE, Venkel
2 C7,C8 560 pF, 25 0 V, ±10%, 0805, , C0805X7R251-56 1KNE, V e nk e l
1 C9 10 nF, 250 V, ±20%, 0805, , C0805X7R251-103KNE, Venkel
4 R4,C11,R21,C30 NI, , , 0603, , ,
1 C12 1.0 uF, 35 V, ±10%, Case A, , TA035TCM105-KAL, Venkel
1 C13 0.22 uF, 25 V , ±10%, 0805, , C0805X7R250-224K NE, Ve nkel
1 C14 0.68 uF , 16 V, ± 10 %, 1206 , , 1206YC6 84 KATMA , AVX
2 C18,C19 3.9 nF, 16 V, ±10%, 0603, , C0603X7R160-392KNE, Venkel
1 C20 0.01 uF, 16 V , ±20%, 0603, , C0603X7R160-103K NE, Ve nkel
1 C22 1800 pF, 50 V, ±10%, 0603, , C0603X7R500-182KNE, Venkel
1 C23 NI, , , Case A, , ,
2 C24,C25 1000 pF, 3 kV, ±10%, 1812, , C1808X7R302-102KNE, Venkel
4 R22,R23,C28,C29 NI, , , 0805, , ,
2 D1,D2 Dual Diode, 225 mA, 300 V, SOT-23, , CMPD2004S, Central Semiconductor
2 D3,D4 BAV99, 300 mA, 100 V, SOT-23, , BAV99, Diodes Inc.
2 FB1,FB2 Ferrite Bead, , , 1206, , BLM31A601S, Murata
1 JP1 CON24, , , 8x3 100 mil , , SSW-10 8-0 1-T -T,
1 JP 2 HEADE R 5X2, , , 5x2 100 m i l, , S SW-105-0 1-T-D,
2 L2,L1 330 uH, 15 0 mA, , Thru Hole, , EL060 7-3 31 J , TDK
2 Q3,Q1 NPN, 300 V, , SOT-23, , MMBTA42LT1, Motorola
1 Q2 PNP, 300 V, , SOT-23, , MMBTA92LT1, Motorola
1 Q4 NPN, 80 V, , SOT-223, , BCP56T1, Motorola
1 RV1 SiDac tor, 275 V , 10 0 A, SOD 6 , , P3100S B, Tec cor
1 RV2 NI, , , Thru-Hole, , ,
1 R1 NI, , , 2010, , ,
1 R2 402, 1/8 W, ±1% , 1206, , CR1206-8W -4020FT, Venkel
1 R3 NI, , , 0805, , , Venkel
1 R5 100 K, 1/16 W, ±1%, 0603, , CR0603-16W-104FT, Venkel
1 R6 120 K, 1/16 W, ±5%, 0603, , CR0603-16W-124JT, Venkel
6 R7,R8,R15,R16,R17,R19 5.36 K, 1/4 W, ±1%, 1206, , CR1206-4W-5361FT, Venkel
2 R10,R9 56 K, 1/10 W, ± 5 %, 0805 , , CR0805-10W-563J T, Venk e l
1 R11 9.31 K, 1/10 W, ±1%, 0603, , CR0603-16W-9311FT, Venkel
1 R12 78.7, 1/16 W, ±1%, 0603, , CR0603-16W-78R7FT, Venkel
1 R13 215, 1/16 W, ± 1 %, 0603 , , CR0 603-1 6W-2150FT, Ve nkel
1 R18 2.2 K , 1/10 W, ±5%, 080 5, , CR0805-10W-222JT, Ve nkel
1 R24 150, 1/10 W, ± 5 % , 0603, , CR0603-10W-150JT , Venk el
2 R25,R26 10 M, 1/10 W , ±5% , 0805, , CR0805-10W-106JT, Venkel
2 R28,R27 10, 1/10 W, ±5%, RC05, , CR0805-10W-100JT, Venkel
1 R29 NI, , , 0603, , ,
1 R30 0, 1/ 10 W, ±5%, 0603 , , CR0603-10W-000JT, Venk el
1 U1 S i3021, , , 16SOIC, , S i3021-KS Rev. C, Silicon Labs
1 U2 Si301x, , , 16SOIC, , Si3015-KS Rev. D, Silicon Labs
1 Z1 Zener Diode, 43 V, , SOD-80, , ZMM43, General Semi
2 Z4,Z 5 Zener Diode, 5.6 V , 50 0 mW, SOD123, , MMSZ5232B , Diodes Inc.
Si30xxSSI-EVB
10 Rev. 1.1
Figure 5. Si3034/35/44DC-EVB Silkscreen
Si30xxSSI-EVB
Rev. 1.1 11
Figure 6. Si3034/35/44DC-EVB Component Side
Si30xxSSI-EVB
12 Rev. 1.1
Figure 7. Si3034/35/44DC-EVB Solder Side
Si30xxSSI-EVB
Rev. 1.1 13
Figure 8. Si3056DC-EVB Schematic (1 of 2)
Si30xxSSI-EVB
14 Rev. 1.1
M1
VCC
RESETb
FC
FSYNCb
SDI
AOUT
RGDTb
RING
SDO
MCLK
M0
SCLK
OFHKb
TIP
1110
7
Footprint of JP1
Top View
9
6
8
24
5
4
151413
18
12
21
19
17
22
1
16
3
20
23
2
JP1
CON24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
R50
JP2
HEADER 5X2
1 2
3 4
5 6
7 8
9 10
Figure 9. Si3056DC-EVB Schematic (2 of 2)
Si30xxSSI-EVB
Rev. 1.1 15
Si3056DC-EVB Bill of Materials
Reference Value Tolerance Rating Part Number Manu fact urer
C2,C1 33 pF ±20% Y2 ECCAVS 330KGS Panasonic
C3 10 nF ± 20% 250 V C0805X7R251-103MNE Venkel
C4 1.0 uF ±20% 50 V ECE-V1HS010SR Panasonic
C6,C5 0.1 uF ±20% 16 V C0603X7R160-104MNE Venkel
C7 2.7 nF ±20% 50 V C0603X7R500-272MNE Venkel
C9,C8 680 pF ±10% Y2 ECKATS681KBS Panasonic
C10 0.01 uF ± 20% 16 V C0603X7R160-103MNE Venkel
C30,C31 DNP 120pF ±20% 250 V C0805X7R251-121MNE V enkel
C51,C50 0.1 uF ±20% 16 V C0805X7R160-104MNE Venkel
D1 HD04 400 V HD04-T Diodes, I nc.
FB1,FB2 Ferrite Bead BLM21A601S MuRata
JP1 CON24 SSW-108-02-G-T Samtec
JP2 HEADER 5X2 SSW-105-01-T-D Samtec
Q3,Q1 NPN 300 V MMBTA42LT1 Motorola
Q2 PNP 300 V MMBTA92LT1 Motorola
Q4,Q5 NPN 80 V MMBTA06LT1 Motorola
RV1 SiDact or 100 A 275 V P3100SB Teccor
R1 1.07 K ±1% 1/2 W CR1210-2W-1071FT Venkel
R2 150 ±5% 1/16 W CR0402-16W-150JT Venkel
R3 3.65 K ±1% 1/2 W CR1210-2W-3651FT Venkel
R4 2.49 K ±1% 1/2 W CR1210-2W-2491FT Venkel
R6,R5 100 K ±5% 1/16 W CR0402-16W-104JT Venkel
R8,R7 20 M ±1% 1/8 W CR0805-8W-2005FT Venkel
R9 1 M ±1% 1/16 W CR0402-16W-10 04FT Venkel
R10 536 ±1% 1/4 W C R1206-4W-5360FT Venkel
R11 73.2 ±1% 1/2 W CR1210-2W-73R2FT Venkel
R12,R13,R14 0 ±1% 1/16 W CR0603-16W-000F Venkel
R16,R15 0 ±1% 1/16 W CR0805-16W-000F Venkel
R32,R30 DNP 15M ±5% 1/8 W CR0805-8W-156JT Venkel
R31,R33 DNP 5.1M ±5% 1/8 W CR0805-8W-515JT Venkel
R50 47 K ±5% 1/16 W CR0603-16W -47 3J T Venkel
U1 Si3056 Si3056-KS Rev C Silicon Labs
U2 Si3018/ 19 Si3018-KS Rev C Silicon Labs
Z1 43 V 1 / 2 W ZMM43 General Semi
Si30xxSSI-EVB
16 Rev. 1.1
Figure 10. Si3056DC-EVB Silkscreen
Si30xxSSI-EVB
Rev. 1.1 17
Figure 11. Si3056DC-EVB Component Side
Si30xxSSI-EVB
18 Rev. 1.1
Figure 12. Si3056DC-EVB Solder Side
Si30xxSSI-EVB
Rev. 1.1 19
Master Mode
Slave Mode
To Slave
To Master
Decoupling cap for U4
Decoupling cap for U3
MCLK
OFHK
FC
SDI
RGDT
FSYNC
SCLK
SDO
Signals are labeled with respect to Si3035
RST_OFFb
RST_INb
RST_OFFb
SCLK_OUT
RST_INb
SCLK_OUT
RESETb
RESETb
AOUT
MCLK
SCLK
SCLK
FSYNCb
SDO
SDI
FC/RGDT
RGDT/FSD
OFHKb
VD
VD
VA
VA
VD
VD
VD
VD
VD
VD
VD
VD
VD VA
VD VA
JP6
HEADER 5X2
12
34
56
78
910
C23
0.1 uF
C21
0.1 uF R17
51
C22
0.1 uF
R25
47 k
+
C19
22 uF
R16
51
J2
Power Connector
1
2
R27
47 k
R12
20 k
JP4
HEADER 5X2
12
34
56
78
910
R29
47 k
JP3
C14
0.1 uF
+
C20
22 uF
C26
820 pF
Y1
OSC
8 14
7
11
4
R15
47 k
R14
51
C27
0.1 uF
U3
LOGIC
2
3
4
5
6
7
8
9
1
19
18
17
16
15
14
13
12
11
A1
A2
A3
A4
A5
A6
A7
A8
G1
G2
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
TP27
C24
0.1 uF
R30 51
D4
6.8 V
2 1
R31
47 k
R20 51
R32
47 k
SW2
4PDT
2
1
3
5
4
6
9
7 8
12
10 11
R28
47 k
TP25
+
-
U5
LM386M-1
3
2
5
6
1
4
8
7
U4B
74LV08
4
5
6
+
C18
1 uF
U4A
74LV08
1
2
3
U4C
74LV08
9
10
8
D3
C17
0.1 uF
U4D
74LV08
12
13
11
R18
20 k
JP5
HEADER 5X2
12
34
56
78
910
J3
Power Connector
1
2
R13
100
R19
3 k TP26
C25
0.1 uF
SW1
R11
10
R26
47 k
+
C15 100 uF
R24
47 k
SW3
DPDT
2
1
3
5
6
4
D5
6.8 V
2 1
J4
RCA JACK
1
2
Figure 13. Si30xxSSI-EVB Schematic (1 of 2)
Si30xxSSI-EVB
20 Rev. 1.1
Board Config. SW2 SW3 M1 M0
Stand Alone
Master w/ slaves
Slave
1
1
1
2
2
2
GND
GND
GNDVD
VD
X
12 3
456
78 9
10 11 12
13 14 15
16 17 18
19 20 21
22 23 24
Footprint of JP7
Top View
M1 M0
MCLK
RESETb
OFHKb
FSYNCb
SCLK
SDO
AOUT
RGDT/FSD
SDI
FC/RGDT
VD VD
VD
JP7
CON24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
J1
RJ-11
1
2
3
4
5
6
JP8
HEADER 5X2
12
34
56
78
910
JP1 JP2
Figure 14. Si30xxSSI-EVB Schematic (2 of 2)
Si30xxSSI-EVB
Rev. 1.1 21
Si30xxSSI-EVB Component Values
Table 3. Si30xxSSI-EVB Bill of Materials
Component Value Supplier
C14,C17,C21,C22,C23,
C24,C25,C27 0.1 F, 16 V, ±10% Venkel
C15 100 F, 16 V, ±10% Venkel
C18 1 F, 16 V, ±10% Venkel
C19,C20 22 F, 16 V, ±10% Venkel
C26 820 pF, 50 V, ±5% Venkel
D3 DIODE, 400 mA, 75 V Diodes, Inc.
D4,D5 6.8 V, 6.8 V Diodes, Inc.
JP1,JP2,JP3 3x1 Header, 3x1 100 mil Berg Electronics
JP4,JP8 HEADER 5x2, 5x2 100 mil Samtec
JP5 HEADER 5x2, 10 pin thru-hole Samtec
JP6 HEADER 5x2, 10 pin thru-hole Samtec
JP7 CON24, 3x8 100 mil Samtec
J1 RJ-11, thru-hole 6 Mouser
J2,J3 Power Connector, thru-hole 2 Mouser
J4 RCA JACK, thru-hole Mouser
R11 10, 1/10 W, ±1%, 0805 NIC Components
R12,R18 20 k, 1/10 W, ±1%, 0805 NIC Components
R13 100, 1/4 W, ±1%, 1206 Rohm
R14,R16,R17,R20,R30 51, 1/10 W, ±5%, 0805 AVX
R15,R24,R25,R26,R27,
R28,R29,R31,R32 47 k, 1/10 W, ±5%, 0805 NIC Components
R19 3 k, 1/10 W, ±5%, 0805 NIC Component s
SW1 SW PUSHBUTTON, thru-hole 4 Mouser
SW2 4PDT, SMT12 Alcoswitch
SW3 DPDT, thru-hole 8 Alcoswitch
TP25 Test Point, thru-hole Mouser
TP26 Test Point, thru-hole Mouser
TP27 Test Point, thru-hole Mouser
U3 LOGIC, 20-pin SOIC Harris
U4 74LV08, SO14 Philips
U5 OP-AMP, M National Semi
Y1 OSC, DIP14
Si30xxSSI-EVB
22 Rev. 1.1
Figure 15. Si30xxSSI-EVB Silkscreen
Si30xxSSI-EVB
Rev. 1.1 23
Figure 16. Si30xxSSI-EVB Component Side
Si30xxSSI-EVB
24 Rev. 1.1
Figure 17. Si30xxSSI-EVB Solder Side
Si30xxSSI-EVB
Rev. 1.1 25
Document Change List
Revision 1.0 to Revision 1.1.
Added BOMs for Si3034 and Si3044 daughter cards
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