| BYX99 SERIES "~ N AMER PHILIPS/DISCRETE OSE D BM@ 6653931 O0ecb5 5 St = F2OI-17 RECTIFIER DIODES _ za Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity (cathode to stud): BYX99-300 to 1200. Reverse polarity (anode to stud): BYX99-300R to 1200R. QUICK REFERENCE DATA BYX99-300(R) | 600(R) | 1200(R) Repetitive peak reverse voltage VRRM max. 300 | 600 | 1200 Vv Average forward current lF(AV) max. 15 A Non-repetitive peak forward current lFsm max. 180 A MECHANICAL DATA Dimensions in mm DO-4: Supplied with device: 1 nut, 1 lock-washer Nut dimensions across the flats: 9.5 mm - 1,0 - 08 10-32UNF eo i _# . 483 max as OQ N ? =I Eh 1,6 min 1,98 max | e| 32 Lg max ln 9,3__ max oe 15 _ iy 203 10,7 Max = 7z65355.2 Net mass: 6 g Torque on nut: min. 0.9 Nm Diameter of clearance hole: 5.2 mm (9 kg cm) Accessories supplied on request: max. 1.7 Nm see ACCESSORIES section (17 kg cm) The mark shown applies to normal polarity types. = Products approved to CECC 50 009-005, available on request April 1984 665See ET ee Te ee ee cae ee ee ee Mc. | BYX99 T-01-17 SERIES N AMER PHILIPS/DISCRETE eS D 6653931 O0eebb 7? = RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages BYX99- 300(R) | 600(R) | 1200(R) Non-repetitive peak reverse voltage (t = 10 ms) Vasm max. 300 600 1200 Vv Repetitive peak reverse voltage (6 = 0,01) VRRM max. 300 600 1200 Vv Crest working reverse voltage VRWM ~ max. 200 400 . 800 Vv Continuous reverse voltage Ve max. 200 400 800 Vv Negrete Currents Average forward current (averaged over any 20 ms period) up to Typ = 129 C IR(AV) max. 15 A R.M.S. forward current IEMs) max. 24 =A Repetitive peak forward current IFRM max. 180 A Non-repetitive peak forward current (t = 10 ms; half sine-wave) T; = 175 C prior to surge; with reapplied Vp wMmax lgsm max, 180 A It for fusing (t = 10 ms) it max. 162 A2s Temperatures Storage temperature Tstg -55 to+175 Junction temperature a Tj max, 175 (9% THERMAL RESISTANCE From junction to ambient in free air Rth j-a = 50 C/W From junction to mounting base Rthj-mb == 2,3 %C/W From mounting base to heatsink with heatsink compound Rth mb-h = 0,5 C/W without heatsink compound Rthmb-h = 0,6 C/W Transient thermal impedance; t = 1 ms 2th j-mb = 0,13 C/W 666 February 1978nt ne Le BYX99 SERIES N AMER PHILIPS/DISCRETE eSE D MM 6653931 O0eeab? 5 oe = CHARACTERISTICS T-~01-17 Forward voltage - .- IF = SOAs Tj = 25 C VE < 155 v } Reverse current . VR = VRWMimax: Tj = 125 C IR < 200 pA OPERATING NOTES 1, The top connector should neither be bent nor twisted; it should be soldered into the circuit so that there is no strain on it. During soldering the heat conduction to the junction should be kept to a minimum, Where there is a possibility that transients, due to the energy stored in the trans- former, will exceed the maximum permissible non-repetitive peak reverse voltage, see General Section for information on damping circuits. 1) Measured under pulse conductions to avoid excessive dissipation. 667 November 1975=x eT en Peale NE ye Pa oer a ee BYX99 SERIES N AMER PHILIPS/DISCRETE eSE D bbS53931 0022868 0 me single phase: a = 1,6 3-phase ] !az= 1,75 a= _F(RMS) 6-phase :a=2,4 7272261 4 interrelation between the power (derived lF(AV) from the left-hand graph) and the maxi- mum permissible temperatures 20 T-01-17 129 (Ww) 2 uN ec 2 *y 10 Trnb (C) 152 10 Tray (A) 18 25 175 75 125 175 Tamb (C) 7272258 ~T; = 25% -~-7)=175C 100 Ip (A) max max 75 50 25 3 Vz (V) 668 November 19751-01-17 BYX99 SERIES = N AMER PHILIPS/DISCRETE eSE D Ef 6653931 0022869 2 i 7272549 maximum permissible non-repetitive r.m.s. forward current based on sinusoidal currents ( f = 50 Hz ) lesiras) (A) lr \ ~~ Tes Igsiams) 200 time with reapplied VRWMmax 100 Tj =175 c Prior to surge *973 10-2 10-1 duration (s) 10 7272259 Zth j-mb (C/W) 10 10-1 10? to- 10-4 10-3 10-2 07! 1 time {s) 10 669 November 1975