FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 68
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
v00.0907
General Description
Features
Functional Diagram
Conversion Loss: 13 dB
Passive: No DC Bias Required
Input Drive: +13 dBm
High Fo Isolation: 30 dB
Die Size: 2.2 x 0.65 x 0.1 mm
Electrical Speci cations*, TA = 25 °C, Pin = +13 dBm
Typical Applications
This HMC-XDB112 is ideal for:
• Point-to-Point Radios
• VSAT
• Test Instrumentation
• Military & Space
• Clock Generation
The HMC-XDB112 is a monolithic Passive Frequency
Doubler which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) technology, and is targeted to high
volume applications where frequency doubling of a
lower frequency is more economical than directly
generating a higher frequency. All bond pads and
the die backside are Ti/Au metallized and the HBT
devices are fully passivated for reliable operation. The
HMC-XDB112 Passive Doubler MMIC is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-XDB112
Parameter Min. Typ. Max. Units
Frequency Range Input 10 - 15 GHz
Frequency Range Output 20 - 30 GHz
Conversion Loss 13 dB
Fo Isolation with respect to output 30 dB
*Unless otherwise indicated, all measurements are from probed die
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Power
Conversion Loss
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10 11 12 13 14 15
CONVERSION LOSS (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10 11 12 13 14 15
Fin
2xFin
OUTPUT POWER (dBm)
INPUT FREQUENCY (GHz)
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
WP-4 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1 RFIN This pad is AC coupled and matched to 50 Ohms.
2 RFOUT This pad is AC coupled and matched to 50 Ohms.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Assembly Diagram
Note 1: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab