AO = Re MOS [F el IRF132,133 FIELD EFFECT POWER TRANSISTOR 12.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.25 This series of N-Channel Enhancement-mode Power N-CHANNEL MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- p ness and reliability. This design has been optimized to give superior performance 2 in most switching applications including: switching power 8 supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-204AA (TO-3) Also, the extended safe operating area with good linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear Max _. 368(0.09) MAX applications such as audio amplifiers and servo motors. OMAK on Features +F mmf SEATING PLANE one eae . _ 0.043(1.09) . TTT 426(10.82} MIN, e Polysilicon gate Improved stability and reliability 204814 09). O10, ol fe e No secondary breakdown Excellent ruggedness VAX] 675.718 0.650(16.51) Ultra-fast switching Independent of temperature 4 e Voltage controlled High transconductance CAST TEMP, is * 1 s97(g0 40) . . . . POINT ey ~ 7 e Low input capacitance Reduced drive requirement 2as00 4 | ae N e Excellent thermal stability Ease of paralleling onan 7 | [920516721 DRAIN 0.162(4.09) DIA. 0.205(5.21) (CASE) orate 0.440(11,18) 0.420(10,67) maximum ratings (Tc = 25C) (unless otherwise specitied) RATING SYMBOL IRF132 IRF133 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Rgs = 1MO. VpGR 100 60 Volts Continuous Drain Current g To= 26C Ip 12 12 A TG = 100C 8 8 A Pulsed Drain Current lpm 48 48 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 Ww/C Operating and Storage Junction Temperature Range Ty, Tete -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Raya 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 127electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF132 BVpss 100 _ _ Volts (Ves = OV, Ip = 250 WA) IRF133 60 Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vgg = OV, Tc = 25C) 250 uA (Vps = Max Rating, 0.8, Veg = OV, To = 125C) 1000 Gate-Source Leakage Current _ _ (Vas = +20V) less +100 nA on characteristics Gate Threshold Voltage To = 26C | VasctH) 2.0 _ 4.0 Voits (Vps = Ves; |p = 250 wA) On-State Drain Current _ _ (Vqas = 10V, Vps = 10V) ID(ON) 12 A Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 8A) Rps(on) 0.18 0.25 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) Ots 3.2 4.0 mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 650 800 pF Output Capacitance Vos = 25V Coss _ 240 500 pF Reverse Transfer Capacitance f= 1MHz Crss _ 55 150 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) _ 15 _ ns Rise Time Ip = 8A, Vas = 15V tr _ 55 _ ns Turn-off Delay Time RGeEn = 500, Reg = 12.50 | tajoffy 30 _ ns Fall Time (Res (EQuiv.) = 102) tt _ 10 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 12 A Puised Source Current Ism _ 48 A Diode Forward Voltage _ (To= 25C, Vas = OV, Ig = 12A) Vsp 1.0 2.3 Volts Reverse Recovery Time tre _ 210 _ ns (Ig = 14A, dig/dt = 100A/usec, Tc = 125C) Qrr 1.4 _ uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 a0 60 40 Ip, DRAIN CURRENT (AMPERES) IRF 132 IRF 133 1 2 4 6 810 20 40 6080100 200 Vos, DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 128 CONDITIONS: Rins(on) CONDITIONS: Ip = 8.0 A, Vag = 10V v, CONDITIONS: Ip = 250nA, Ving = Vag VesitH) Rogiony AND Vegcr4) NORMALIZED 40 0 40 80 120 160 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rpsion; AND Vasirm) VS- TEMP.