2SK1105-R N-C HANNEL SILICON POWER MOS-FET WF eatures High speed switching Low on-resistance @Nw secondary breakdown @ Low driving power @ High voltage BApplications @S-vitching regulators euers @D2-DC converters @ General purpose power amplifier Milfax. Ratings and Characteristics @Alsolute Maximum Ratings(Tc=25C) : FUJI POWER MOS-FET F-I SERIES Outline Drawings JEDEC EIAJ Equivalent Circuit Schematic __. Items Symbols Ratings | Units __Train-source voltage Voss 800 Vv __ Continuous drain current Ip 3 A Drain(p) __Fulsed drain current Tnmuisy 12 A ___Continuous reverse drain current | Ipg 3 A ___Cate-source peak voltage Voss +20 Vv Gate(g) ___ Max. power dissipation Pp 80 Ww Cperating and storage Ten 150 *C Source(S) __t:mperature range Tstg 55~ +150 C @Electrical Characteristics(Tc= 25C) __ Items Symbols Test Conditions Min. Typ. Max. | Units ___Drain-source breakdown voltage | Visrynss p=lmA_ Ves=0V 800 Vv __ Grate threshold voltage Voesan Ib=lmA Vos= Vos 2.1 3.0 4.0 Vv 7 ero gate voltage drain current | Ings Vos =800V Ten =25 C 10 00 uh __ Vos=0V Ton = 125C 0.2 1.0 mA (;ate-source leakage current | Icss Ves=+20V Vos=0V 10 100 nA ___Jrain-source on-state resistance | Rostom Ip=15A Ves=10V 3.0 4.0 2 ___Vorward transconductance Bis Inp=15A Vos=25V 2.0 4.0 $ ___Input capacitance Ciss Vos=25V 900__ | 1400 ___Output capacitance Coss Vos=0V 90 140 pF __lReverse transfer capacitance | Crss f =1MHz 35 60 urn-on time ton taton) - _ 20 30 (ton t+tacon + ty) te Veo30V Ibp=21A 40 60 75 : : Ves=10V ns urn-off time tos; tatort Ro =500 150 250 ____ (tao +t) tr 60 90 __ Diode forward on-voltage Vep Ir=2% lor Vos=0V_ Ten =25C 1.0 135 | V __Jleverse recovery time ter Ir=Ipr ci/dt=100A/ps Ten 25C | | 400 ns @T jiermal Characteristics Items Symbols Test Conditions Min. Typ. | Max. | Units hermal Resistance Rinna) channel to air 35.0 C/W Runten-2 channel to case 1.56 | C/W A2-15423K 1105R Wi (Characteristics se test Ten= 25C Sov v (A) o 10 2 30 4 50 60 70 VoslV) Typical Output Characteristics To=f (Vos): 5Ous test, Vos=25V (A) o 2 4 6 8 iO 62004 Vesl(V) Typical Transfer Characteristics gfs=f(lo):'8Ous pulse test, Wos=25V ch = ofs {$s} 0 2 3 4 #5 6 7 ICA) Typical Forward Transconductance vs. Ip A2-165 FUJI POWER MOS-FET Rosion (Q) -50 50 100 150 Tenl"C] On State Resistance vs. Ten Bosiow (0) Roston)= f(l0); Bus Tens 25C o lt 2 3 4 & 6 7 InfA) Typical Drain-Source on State Resistance vs. In Vos (th)= (Ten):Vos = Ves Vesin (vl 50 50 100 150 Ta lC) Gate Threshold Voltage vs. TenFUJI POWER MOS-FET 2SK 1105R =f(Vps): Ves =OV, f= 05 03 c (nF) Ol Vos 008 v 003 Vv) ly 10 20 30 Vos(VI Typical Capacitance vs. Vos Ir=f(Vsol'8Ous pulse test le (A) 0 O2 04 06 08 Wb Iz 4 6 Veol(V] Forward Characteristics of Reverse Diode 1072 107 10 10! (S$) Transient Thermal Impedance 105 10-4 Po (Ww) Vasf (Gg) In=34 Vees640V q00v 60V Og {nC) Typical Input Charge 0 50 100 150 TCC) Allowable Power Dissipation vs. Tc To=f (Vos): D=0.01.Tc= 25C a wanda 10 I, 10 (A) 1oms 10" 102 10 VoslV} Safe Operating Area A2-156 s or { ee A, eh ~., 1 COA UFOAR OC. THE F- 7. PO, MSE) ROO OR MD, BHO MMIC EY ROPES < BRBSENSLER HVE. LOAF OPIS NTS RM SH SMAIIL, TONBORAROLMRBLAFLT F- BOREL TCR Et, 2 AAFOTERML CA SBM, BLAINE PAL ARAMA ALOTHO. AAR OPI EACLE MH. EO HLHERIO SEHR SPREE EE ISSABHEO RPGS TIED CIAO EA, 3. BEMMATHRORE CEMHOM LI Be TORT. LOL. AK Mand ob SEE CART SEMEN DET, SLR MAM TOMA BRO LCA BRA, ARIE SURI SIRES. HSS Ak CTR. WAR AT, GAM PLIL AR ERE MRO LMOFM EME TCR Sh, 4, APSO TOSME, VMOBMEARREHS TROLS SET RACRARRIC MA ehMAL eS RL Con CORT, | dyes 8 > O AdRKE + Mifatkns CHE) i MU BS > LPH HE to F TEV ATLAS + REET RN AS TT LATE HRA bh OE 5. AA SOPIGCMORME. THO LS HIE MME HOM RA OMe ERS OP ROD RIS. ACR LRA eS MMOL, THEPCC SS, COA eo FOMME CHEOMCHAT Sia, TOCMAUAEMNAE LEAR BOLTS, MEDROEL ALDI, Bo tT ao FOV AFARE, REMNORMDOMIGEREM CALL AMET, Hae CUI. ABFA AE) + Wena RU SIL Bete EMS SM ae + AUTRE LA OER WERE BR Sel RRR 72 0) EL 6. MO CHEMIE A BSR ENS PHO LSA, BAF OTCACMOW MAHAL eed Fay, + a ~ ALTE AE IK AS - RFD GR REE Pa Ae 7 AAFVFO-MPE ALAMO MMS DUOTIA, MBC KS BHORMARLN CT, 8 CONF OFOABI ATMO MARDER LAS. Wie MNT Sol ay RRR lh, TOMER MILT KL, ALR 2 OUTRO DE DAMICEE Rae SUS ORE FOUR AUREUS BOC SO RHA, NM / Beeman Si WS ASE ND ESE HRS MRIS TH (03) 5988-7657 RARE RRR SS (0G) 455-6467 +151 RAMMESE 4 RT 30832 @ (03) 5388-7681 SR te (0764) 41-1231 iS 47 UL) HBAS RR @ (03) 5388-7680 OS ees @ (0878) 51-0185 @ (03) $988-7651 EGER mw (0263) 26-6740 PRM PEER M (052) 204-0295 Hg 9} eS EB @ (03) 5388-7685 AME MEMPPESEE (092) 731-7132