SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,68 TYPE No. BC338-01 PT1837 FT008 MM709 2N706B/46t BSX94A QD 103-78* * SE5037 2N9 18/46 ATS1 AT201A AT241 358258 MC 105 BCY13 BCY16 SE7017 TE697Tt RT7007E FT3641t CS2218t 11B1259 c0Q10002 CDQ10004 NSO67 CDQ10010 26T2 2N866t MD1T1893 2N2246 2N2249 2N2252 2N2255 FT3569 NS430 200M5 200M Jim 300Ms |3.2m 300MSA 400M8A|3.3m 400M |2.2m 400M84|2.3m 600M84|2.2m 960MA |2.3m 3.5G5 4.065 4.065 8.0GA |6.7md 5.0m 40M [5.0m 40M [5.0m om 50M$A|4.5m 80MA 150M |3.0m 250M5A|4.5m 400M5 m 2.8m 10M |3.3m 10M84/3.3m 11M [3.3m m 12M (3.3m 15M) |3.3m 20M 40MA8|3.0m 50M8 60MA |2.8m 60MA |2.8m m 60M8a|2.8m m 6OMA/2.8m 60MSA/5.0m -5m 80.M 2.9m D.A.T.A. 5.0 |500m 8.0 5.0 | 75m 4.0 5.0 5.0 6.5 4.0 3.0 3.0 |100m 3.0 [100m 3.0 |100m 1.5 | 35m 200m 10 |200m 10 {300m 6.0 5.0 5.0 5.0 5.0 7.0 4.0 3.0 4.0 4.0 4.0 1.0 5.0 7.0 6.0 6.0 6.0 6.0 5.0 IN ORDER OF (1) MAX COLLECTOR DISSIPATION 100 tA 1 120 15Z|6.0mg | 30 150u |600 15 tA 40t 40t 405n 350 10uZ |200 ta Bot 20 75 50 1.0ub 18.0 A 250nb | 25 @ 1,.2ufb | 502 180nb | 25 180nb | 40 1.3ub 25 w 1.5ub {8.0 SYMBOLS AND CODES EXPLAINED IN INTERPRETER Cob |STRUC/Y200 |E 0 16ps -TURE M g D DPE D s/a |AD T0200/D E MM10jA TO18 | A TOs TO52 TO46 TO18 L2d R23 R23 TO105; A R97 TO18 R12 RQ? TO18 TOS TO39 TOS TO18 TO+122/P TO18 JA TO18 |A T018 TO18 R124 TOs 68