SKKT 57B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 C 55 A Tc = 100 C 41 A Tj = 25 C 1500 A Tj = 130 C 1200 A Tj = 25 C 11250 kA2s Tj = 130 C 7200 kA2s VRSM 1700 V VRRM 1600 V Chip IT(AV) ITSM i2t 2 (R) SEMIPACK 1 Thyristor Modules it sinus 180 10 ms 10 ms VDRM (di/dt)cr Tj = 130 C (dv/dt)cr Tj = 130 C Tj SKKT 57B16 E G6 1600 V 140 A/s 1000 V/s -40 ... 130 C Module Tstg Features * Heat transfer through aluminium oxide ceramic isolated metal baseplate * Hard soldered joints for high reliability * UL recognized, file no. E63532 Typical Applications * DC motor control (e. g. for machine tools) * AC motor soft starters * Temperature control (e. g. for ovens, chemical processes) * Professional light dimming (studios, theaters) Visol a.c.; 50 Hz; r.m.s. -40 ... 125 C 1 min 3000 V 1s 3600 V Characteristics Symbol Conditions min. typ. max. Unit Chip VT Tj = 25 C, IT = 180 A 1.5 1.75 V VT(TO) Tj = 130 C 0.85 1 V 4.00 4.80 m 20 mA rT Tj = 130 C IDD;IRD Tj = 130 C, VDD = VDRM; VRD = VRRM tgd Tj = 25 C, IG = 1 A, diG/dt = 1 A/s 1 tgr VD = 0.67 * VDRM 2 s tq Tj = 130 C 170 s IH Tj = 25 C 150 250 mA 300 600 mA s IL Tj = 25 C, RG = 33 VGT Tj = 25 C, d.c. 2.5 V IGT Tj = 25 C, d.c. 100 mA VGD Tj = 130 C, d.c. IGD Tj = 130 C, d.c. Rth(j-c) Rth(j-c) Rth(j-c) cont. sin. 180 rec. 120 0.25 V 4 mA per chip 0.470 K/W per module 0.235 K/W per chip 0.490 K/W per module 0.245 K/W per chip 0.510 K/W per module 0.255 K/W Module Rth(c-s) chip 0.22 K/W module 0.11 K/W Ms to heatsink M5 4.25 5.75 Mt to terminals M5 2.55 3.45 Nm 5 * 9,81 m/s2 a w 75 Nm g SKKT (c) by SEMIKRON Rev. 0 - 19.01.2009 1 SKKT 57B16 E G6 Fig. 1L: Max. power dissipation per chip vs. on-state current Fig. 1R: Max. power dissipation per chip vs. ambient temperature Fig. 2L: Max. power dissipation of one module vs. rms current Fig. 2R: Max. power dissipation of one module vs. case temperature Fig. 3L: Max. power dissipation of two modules vs. direct current Fig. 3R: Max. power dissipation of two modules vs. case temperature 2 Rev. 0 - 19.01.2009 (c) by SEMIKRON SKKT 57B16 E G6 Fig. 4L: Max. power dissipation of three modules vs. direct current Fig. 4R: Max. power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time (c) by SEMIKRON Rev. 0 - 19.01.2009 3 SKKT 57B16 E G6 Fig. 9: Gate trigger characteristics SKKT...B SEMIPACK 1 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 Rev. 0 - 19.01.2009 (c) by SEMIKRON