12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
32 dBm Saturated RF Power
41 dBm Output IP3 Linearity
17 dB Gain Control
On-Chip Power Detector
4x4mm Standard QFN Package
100% RF Testing
Features
Absolute Maximum Ratings1
Supply Voltage (Vd1,2,3)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg1,2,3)
Max Power Dissipation (Pdiss)
RF Input Power
Operating Temperature (Ta)
Storage Temperature (Tstg)
Channel Temperature (Tch)
MSL Level (MSL)
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
+8.0V
1500 mA
-2.4V
5.5W
+19 dBm
-55 to +85 ºC
-65 to +150 ºC
165 ºC
MSL3
Class A
Class 1A
Page 1 of 7
(1) Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power;
however, maximum total power dissipated is specified at 5.5 W
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f)
Small Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
P1dB
Psat
OIP3 at Pout = 18 dBm per Tone
Power Detector Range
Drain Bias Voltage (Vd1,2,3)
Detector Bias Voltage (Vdet,ref)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1)
Supply Current (Id2)
Supply Current (Id3)
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
VDC
VDC
VDC
mA
mA
mA
Min.1
12.0
19.0
10.0
10.0
31.0
40.0
-
-2
Typ.
-
21.5
15.0
10.0
55.0
30.0
32.0
41.0
37.0
7.0
5.0
-1.0
100
200
400
Max.
16.0
-
7.0
0.0
200
400
800
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1043-QH
The XP1043-QH is a packaged linear power amplifier that
operates over the 12.0-16.0 GHz frequency band. The
device provides 21.5 dB gain and 41 dBm Output Third
Order Intercept Point (OIP3) across the band and is offered
in an industry standard, fully molded 4x4mm QFN package.
The packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device includes
on-chip ESD protection structures and DC by-pass
capacitors to ease the implementation and volume
assembly of the packaged part. The device is
manufactured in GaAs PHEMT device technology with BCB
wafer coating to enhance ruggedness and repeatability of
performance. XP1043-QH is well suited for Point-to-Point
Radio, LMDS, SATCOM and VSAT applications.
General Description
(1) Note: Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power.
February 2010 - Rev 13-Feb-10
Power Amplifier Measurements
Page 2 of 7
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
XP1043-QH: S-parameters (dB) vs. Freq (GHz),
(VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
10 11 12 13 14 15 16 17 18
Freq (GHz)
S-parameter (dB)
S21
S11
S22
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
XP1043-QH: Pout (dBm) vs Pin (dBm) at Room Temp.
Vd = 7 V, Iq = 700mA
10
12
14
16
18
20
22
24
26
28
30
32
34
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power (dBm)
Pout, Freq = 12.5 GHz
Pout, Freq = 13.0 GHz
Pout, Freq = 13.5 GHz
Pout, Freq = 14.0 GHz
Pout, Freq = 14.5 GHz
Pout, Freq = 15.0 GHz
Pout, Freq = 15.5 GHz
XP1043-QH: Pout (dBm) vs Pin (dBm) at +85 °C.
Vd = 7 V, Iq = 700mA
10
12
14
16
18
20
22
24
26
28
30
32
34
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power (dBm)
Pout, Freq = 12.5 GHz
Pout, Freq = 13.0 GHz
Pout, Freq = 13.5 GHz
Pout, Freq = 14.0 GHz
Pout, Freq = 14.5 GHz
Pout, Freq = 15.0 GHz
Pout, Freq = 15.5 GHz
XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at Room Temp.
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz
0
5
10
15
20
25
30
35
40
45
50
55
60
14 15 16 17 18 19 20 21 22
Output Power (dBm per tone)
CI/3 (dBc)
CI3, Freq = 12.5 GHz, Temp = 35 C
CI3, Freq = 13.5 GHz, Temp = 35 C
CI3, Freq = 14.5 GHz, Temp = 35 C
CI3, Freq = 15.5 GHz, Temp = 35 C
XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at at +85 °C.
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz
0
5
10
15
20
25
30
35
40
45
50
55
60
65
14 15 16 17 18 19 20 21 22
Output Power (dBm per tone)
CI/3 (dBc)
CI3, Freq = 12.5 GHz, Temp = 85 C
CI3, Freq = 13.5 GHz, Temp = 85 C
CI3, Freq = 14.5 GHz, Temp = 85 C
CI3, Freq = 15.5 GHz, Temp = 85 c
XP1043-QH: V_Detect (mV) vs Output Power (dBm)
Freq = 12.5-15.5 GHz, Temp = -45 to 85 Degree C
10
100
1000
10000
0 3 6 9 12 15 18 21 24 27
Output Power (dBm)
Detector Voltage = Vref - Vdet (mV)
12.5GHz, 25C
15.5GHz, 25C
12.5GHz, -45C
15.5GHz, -45C
12.5GHz, 85C
15.5GHz, 85C
MTTF
Page 3 of 7
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
These numbers were calculated based on accelerated life test information and thermal model analysis received from
the fabricating foundry.
XP1043-QH-0G00: MTTF hours vs Package Base Temperature
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
20 30 40 50 60 70 80 90 100 110 120 130
Package Base Temp (°C)
MTTF (hours)
XP1043-QH-0G00: Tch vs Package Base Temperature
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA
50
75
100
125
150
175
200
225
20 30 40 50 60 70 80 90 100 110 120 130
Package Base Temp (°C)
Tch (°C)
XP1043-QH-0N00: Operating Power De-rating Curve (continuous)
0
1
2
3
4
5
6
25 50 75 100 125 150 175
Package Base Temp (ºC)
Pdiss (W)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
Page 4 of 7
Package Dimensions / Layout
Functional Schematic Pin Designations
Pin Number
1-2
3
4
5-6
7
8
9
10
11
12
13-14
15
16
17-18
19
20
21
22-23
24
Pin Name
GND
nc
RF In
GND
VG1
VG2
VG3
nc
Vdet
Vref
nc
RF Out
nc
GND
VD3
VD2
VD1
GND
nc
Pin Function
Ground
Not Connected
RF Input
Ground
Gate 1 Bias
Gate 2 Bias
Gate 3 Bias
Not Connected
Pwr Det
Pwr Det Reference
Not Connected
RF Output
Not Connected
Ground
Drain 3 Bias
Drain 2 Bias
Drain 1 Bias
Ground
Not Connected
Nominal Value
GND
GND
GND
~ -1.0V
~ -1.0V
~ -1.0V
GND
5.0V
5.0V
GND
GND
GND
7.0V, 400 mA
7.0V, 200 mA
7.0V, 100 mA
GND
GND
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
1
2
3
4
16
15
14
13
10
GND
5
6
17
18
RF IN
VD3VD2VD1GND
GND
nc
GND
GND
GND
RF OUT
GND
nc
nc
nc
GND
nc
nc
VG1 VG2 VG3 Vdet Vref
11
12
7
8
9
24
23
22
21
20
19
Page 5 of 7
Bias Circuit
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias conditions of VD1,2,3 at 7.0V with
100, 200, 400mA respectively. The device can also be safely biased to a maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF
power. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Under
heavy RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the
drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical
gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the
positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as
possible, with additional 10µF decoupling caps.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5V bias and measuring the
difference in output voltage with standard op-amp in a differential mode configuration.
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
R
-5V
To Gate
From Bias
Circuit
Emitter Follower placed between the
(gate) output of the bias circuit MMIC gate
The output impedance of the bias circuit’s gate output should be
small. When in saturation, the gates of the XP1043-QH can draw
several mA which may cause adverse affects in a gate circuit with
high output impedance. It is recommended that an Emitter
Follower circuit be used (shown above), which follows the bias
circuit’s gate output. This will result in a high-input impedance,
low-output impedance buffer between the gate output of the
bias circuit and the gate input of the XP1043-QH.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
Page 6 of 7
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
Recommended Layout
Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
Page 7 of 7
Handling and Assembly Information
Ordering Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Electrostatic Sensitive Device -
Observe all necessary precautions when handling.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible
with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this
part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground
connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and
life of the product due to thermal stress.
Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental
requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant
components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is
100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as
well as higher temperature (260°C reflow) “Pb Free” processes.
Part Number for Ordering Description
XP1043-QH-0G00 Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantity
XP1043-QH-0G0T Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reel
XP1043-QH-EV1 XP1043-QH evaluation board
Typical Reflow Profiles
Reflow Profile
Ramp Up Rate
Activation Time and Temperature
Time Above Melting Point
Max Peak Temperature
Time Within 5 ºC of Peak
Ramp Down Rate
SnPb
3-4 ºC/sec
60-120 sec @ 140-160 ºC
60-150 sec
240 ºC
10-20 sec
4-6 ºC/sec
Pb Free
3-4 ºC/sec
60-180 sec @ 170-200 ºC
60-150 sec
265 ºC
10-20 sec
4-6 ºC/sec
12.0-16.0 GHz Power Amplifier
QFN, 4x4mm
P1043-QH
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2010 - Rev 13-Feb-10
