©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSA1150
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
* PW≤350ms, Duty cycle≤50%
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse T est: PW≤350µs, Duty cycle≤2%
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base V oltage -40 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Volt age -5 V
IC Collector Current (DC) -500 mA
ICP * Collector Current (Pulse) -700 mA
PC Collector Power Dissipation 300 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 V
BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -25V, IE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
hFE * DC Current Gain VCE= -1V, IC= -100mA 40 400
VCE(sat) * Collector-Emitter Saturation V oltage IC= -500mA, IB= -50mA -0.3 -0.4 V
VBE (sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1.0 -1.3 V
Classification R O Y G
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
1.Emitter 2. Collector 3. Base
KSA1150
Low Frequency Power Amplifier
• Collector Dissipation : PC = 300mW
• Complement to KSC2710
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSA1150
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
0
-50
-100
-150
-200
-250
-300
-350
-400
-450
-500
IB = -1.4mA
IB = -1.6mA
IB = -1.2mA
IB = -0.8mA
IB = -0.6mA
IB = -0.4mA
IB = -1.0mA
IB = -0.2mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE=-1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
VCE(sat)
IC=10IB
VBE(sat)
VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
VCE=-1V
IC[mA], COLLECTOR CURRENT
VBE(sat)[V], BASE-EMITTER VOLTAGE
-1 -10
1
10
100
f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSA1150
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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