UF1001UF1007 VISHAY Vishay Lite-On Power Semiconductor 1.0A UltraFast Rectifier Features Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop @ Surge overload rating to 30A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings T; = 25C 94 9369 Repetitive peak reverse voltage UF 1001 Vrru 50 Vv =Working peak reverse voltage UF1002 =VRwM 100 Vv =DC Blocking voltage UF1003 =VR 200 V UF1004 400 Vv UF1005 600 Vv UF1006 800 Vv UF 1007 1000 Vv Peak forward surge current lesm 30 A Average forward current Ta=55C lEAy 1 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage UF10011003 Vv UF1004 Ve 1.3 Vv UF10051007 Ve 1.7 Vv Reverse current Ta=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time IF=1A, IR=0.5A, | UF10011004 ter 50 ns I1=0.25A UF10051007 tre 75 | ns Diode capacitance VpR=4V, f=1MHz | UF1001-1004 Cp 20 pF UF10051007 Cp 10 pF Thermal resistance RthJA 95 KAW junction to ambient Rev. A2, 24-Jun-98UF1001UF1007 ar Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 1.00 - 30 T TT TT ier T T TTT a x 8.3 ms Single Half-Sine-Wave ~~ < JEDEC method 2 2 N 5 5 0.75 8 NI : 2 TN a B N\ E 0.50 N 2 NI Ww oO 5 2 N w rm 10 2 0.25 % IN < o N I o bN Zz Single phase half-wave , NA Resistive or Inductive load ? ly 0 = 0 0 25 50 75 100 125 150 175 1 10 100 15458 Tamb Ambient Temperature (C ) 15460 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 20 100 10 & N=25C Tj = 25C _ IF Pulse Width = 300 us i t=1 MHz x a 8 UF1001-UF1004 UF1004 5 5 10 5 8 g Pp @ 10 o UF1001-UF1 003 oO e 3 UF1005UF1007 01 2 I . a LL I _ a oO UF1005-UF1007 0.01 1 0 02 04 06 08 10 12 14 1 10 100 15459 Ve Forward Voltage ( V ) 15461 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98war UF1001UF1007 Vishay Lite-On Power Semiconductor Dimensions in mm A B A Cc U0-41 Dim Min Max A | 25.40 - | aa B 4.06 5.21 technical drawings ( G7 0.864 according to DIN specifications 14443 UD 2.00 2.12 AUL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 0.35 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98UF1001UF1007 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98