SOT23 SILICON EPITAXIAL SCHOTTKY
BARRIER SINGLE AND DUAL DIODES
ISSUE 3– JULY 95 ✪
PARTMARKING DETAILS
Single Diode – L4Z
Common Anode – L42
Series – L43
Common Cathode – L44
FEATURES
Low VF
High current capability
APPLICATIONS
P.S.U.
Mobile telecomms. & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR30 V
Forward Current IF200 mA
Forward Voltage VF400 mV
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 30 V IR=10mA
Forward Voltage VF
500
240
320
400
500
1000
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current IR4
AVR=25V
Diode Capacitance CD10 pF f=1MHz,VR=1V
Reverse Recover
Time trr 5 ns switched from
IF=10mA to IR=10mA
RL=100
, Measured
at IR=1mA
1
3
1
32
Single
Diode
Common
Cathode
BAT54 BAT54C
Common
Anode
Series
BAT54SBAT54A
1
32
1
23
BAT54