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WEITRON
SOT-23
1
2
3
S9012LT1
PNP General Purpose Transistors
VCEO
-500
Value
-25
-40
-5
S9012LT1=2T1
-0.1
-100
-100
E=-20Vdc, )
-40
-5.0
O
-25
-40
-5.0
-0.1
-0.1 u
u
IE=
0
-0.1
u
300
2.4
417
Lead(Pb)-Free
P b
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=-20 mAdc, VCE=-6 Vdc, f=30MHz) fT150 -
-
DC Current Gain
(IC=-50 mAdc, VCE=-1.0 Vdc)
(IC=-500 mAdc, VCE=-1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
hFE
VCE(sat)
VBE(sat)
VEBF
-
-
-
-
-
Vdc
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Unit
Min Max
(1)
hFE
(2)
120
40
350
MHz
CLASSIFICATION OF h
FE
Rank
Range
LH
120-200 200-350
-0.6
-1.2
WEITRON
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Base-Emitter Voltage
IE=-100mA)( - -1.4
S9012LT1
Figure 1. St atic Characteristic Figure 2. DC c urrent Gain
Fig ure 3. Base-Emitter Saturation Voltage
Co llector-Emitter Saturation Vo ltage
Figure 4. Current Gain Bandwidth Product
IB=-100uA
IB=-50uA
IB=-150uA
IB=-200uA
IB=-250uA
IB=-300uA
IC, COLLECTOR CURRENT
VCE , COLLECTOR-EMITTER VOLTAGE
hFE, DC CURRENT GAIN
IC, CO LLECTOR CURRENT
VBE(s at), VCE(s at) , SATURATION VOLTAGE
IC, COLLECTOR CURRENT
fT CURRENT GAIN-BANDWIDTH PRODUCT
IC, COLLECTOR CURRENT
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WEITRON
(mA)
(mA)
(mA)
(mA)
(VoLTS)
,
(MHz)
0 -10
-10
-20
-20
-30
-30
-40
-40
-50
-50
0
1 10 100 1000 10000
1
10
100
1000
-10 -100 -1000
100
1000
10
VCE = -1V
10 100 1000
-100
-1000
-10
BE
V(sat)
(sat)VCE
B
IC=10I
V
CE
= - 6V
S9012LT1
