High Performance, SPI Digital Output,
Angular Rate Sensor
Data Sheet ADXRS810
Rev. 0 Document Feedback
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FEATURES
Excellent null offset stability over temperature
High vibration rejection over a wide frequency range
2000 g powered shock survivability
SPI digital output with 16-bit data-word
Low noise
Continuous self-test
Fail-safe functions
Temperature sensor
3.3 V and 5 V operation
−40°C to +105°C operation
Small, low profile, industry standard SOIC package provides
yaw rate (Z-axis) response
Qualified for automotive applications
APPLICATIONS
Car navigation
GENERAL DESCRIPTION
The ADXRS810 is an angular rate sensor (gyroscope) intended
for automotive navigation applications. An advanced, differential,
quad-sensor design rejects the influence of linear acceleration,
enabling the ADXRS810 to operate in exceedingly harsh
environments where shock and vibration are present.
The ADXRS810 uses an internal, continuous self-test archi-
tecture. The integrity of the electromechanical system is checked
by applying a high frequency electrostatic force to the sense
structure to generate a rate signal that can be differentiated
from the baseband rate data and internally analyzed.
The ADXRS810 is capable of sensing an angular rate of up to
±300°/sec. Angular rate data is presented as a 16-bit word, as
part of a 32-bit SPI message.
The ADXRS810 is available in a cavity plastic 16-lead SOIC and
is capable of operating across both a wide voltage range (3.3 V
to 5 V) and temperature range (−40°C to 105°C).
FUNCTIONAL BLOCK DIAGRAM
SPI
INTERFACE MISO
MOSI
SCLK
CS
HIGH VOLTAGE
GENERATION
EEPROM
P
SS
CP5
AV
SS
V
X
LDO
REGULATOR
P
DD
DV
SS
DV
DD
AV
DD
REGISTERS/MEMORY
BAND-PASS
FILTER
FAULT
DETECTION
TEMPERATURE
CALIBRATION
DECIMATION
FILTER
ALU
PHASE-
LOCKED
LOOP
CLOCK
DIVIDER
DEMOD
Q FILTER
Q DAQ
P DAQ
HV DRIV E
ST
CONTROL
12-BIT
ADC
AMPLITUDE
DETECT
Z- AX I S ANG ULAR
RATE SENSOR
ADXRS810
11034-001
Figure 1.
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ADXRS810: High Performance, SPI Digital Output, Angular
Rate Sensor Data Sheet
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ADXRS810 Data Sheet
Rev. 0 | Page 2 of 28
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
Rate Sensitive Axis ....................................................................... 5
ESD Caution .................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Theory of Operation ........................................................................ 9
Continuous Self-Test .................................................................... 9
Applications Information .............................................................. 10
Calibrated Performance ............................................................. 10
Mechanical Considerations for Mounting .............................. 10
Application Circuit ..................................................................... 10
ADXRS810 Signal Chain Timing ............................................. 11
SPI Communications Characteristics .......................................... 12
SPI Communication ProtocolApplications ............................. 13
Device Data Latching ................................................................. 13
Command/Response .................................................................. 14
SPI Communication ProtocolBit Definitions ......................... 15
Command/Response Bit Descriptions .................................... 15
ADXRS810 Fault Register Bit Definitions .............................. 17
CHK Bit Assertion: Recommended Start-Up Routine ......... 19
SPI Rate Data Format ..................................................................... 20
ADXRS810 Memory Map ............................................................. 21
Memory Register Definitions ....................................................... 22
0x00 RATE1, 0x01 RATE0 ........................................................ 22
0x02 TEM1, 0x03 TEM0 ........................................................... 22
0x04 LOCST1, 0x05 LOCST0 ................................................... 22
0x06 HICST1, 0x07 HICST0 .................................................... 22
0x08 QUAD1, 0x09 QUAD0 ..................................................... 22
0x0A FAULT1, 0x0B FAULT0 .................................................. 23
0x0C PID1, 0x0D PID0 ............................................................. 23
0x0E SN3, 0x0F SN2, 0x10 SN1, 0x11 SN0 ............................. 23
Suggested PCB Layout ................................................................... 24
Solder Profile............................................................................... 25
Package Marking Codes ............................................................ 26
Outline Dimensions ....................................................................... 27
Ordering Guide .......................................................................... 27
Automotive Products ................................................................. 27
REVISION HISTORY
10/12Revision 0: Initial Version
Data Sheet ADXRS810
Rev. 0 | Page 3 of 28
SPECIFICATIONS
Specification conditions at TA = 25°C, PDD = 5 V, angular rate = 0°/sec, bandwidth = f0/200, ±1 g, continuous self-test on.
Table 1.
Parameter Test Conditions/Comments Symbol Min Typ Max Unit
MEASUREMENT RANGE Full-scale range FSR ±300 °/sec
SENSITIVITY See Figure 2
Nominal Sensitivity 80 LSB/°/sec
Sensitivity Tolerance
At 25°C
±1
Sensitivity Temperature Drift From 40°C to +25°C or 25
°
C to 85°C −3 +3 %
Nonlinearity1 Best fit straight line 0.05 % FSR rms
Cross-Axis Sensitivity2 ±3 %
NULL
Null Accuracy At 25°C ±2 °/sec
Null Temperature Drift
40°C to +25°C or 25°C to 85°C
−4
+4
Overall Null Accuracy
1
40°C to +85°C −8 +8 °/sec
Null Drift Gradient 40°C to +85°C 0.1 +0.1 °/s/°C
NOISE PERFORMANCE
Rate Noise Density T
A
= 25°C 0.015 °/sec/√Hz
T
A
= −40°C to 105°C 0.020 °/sec/√Hz
LOW-PASS FILTER
Cut-Off (−3 dB) Frequency f
0
/200, see Figure 10 f
LP
77.5 Hz
Group Delay3 Frequency = 0 Hz t
LP
3.25 4 4.75 ms
SENSOR RESONANT FREQUENCY f
0
13 15.5 19 kHz
SHOCK AND VIBRATION IMMUNITY
Sensitivity-to-Linear Acceleration
DC to 5 kHz
0.03
g
SELF-TEST See the Continuous Self-Test section
Magnitude 2559 LSBs
Fault Register Threshold Compared to LOCST data 2239 2879 LSBs
Sensor Data Status Threshold Compared to LOCST data 1279 3839 LSBs
Frequency f
0
/32 f
ST
485 Hz
ST Low-Pass Filter −3 dB Frequency f
0
/8000 1.95 Hz
ST Low-Pass Filter Group Delay3 64 ms
SPI COMMUNICATIONS
Clock Frequency f
OP
8.08 MHz
Voltage Input High MOSI, CS, SCLK V
IH
0.85 × P
DD
P
DD
+ 0.3 V
Voltage Input Low MOSI, CS, SCLK VIL 0.3 PDD × 0.15 V
Output Voltage Low MISO, current = 3 mA V
OL
0.5 V
Output Voltage High MISO, current = −2 mA V
OH
P
DD
− 0.5 V
Input/Output Leakage Current MISO, MOSI, SCLK, V
OL
= 0 V I
IL
0.1 0 µA
MISO, MOSI, SCLK, V
OL
= P
DD
I
IH
0 0.1 µA
Internal Pull-Up Current CS, PDD = 3.3 V, CS = 0.15 × PDD IPU 60 200 µA
CS, PDD = 5 V, CS = 0.15 × PDD 80 300 µA
TEMPERATURE SENSOR
Value at 45°C 0 LSB
Scale Factor 5 LSB/°C
ADXRS810 Data Sheet
Rev. 0 | Page 4 of 28
Parameter Test Conditions/Comments Symbol Min Typ Max Unit
POWER SUPPLY
Supply Voltage P
DD
3.15 5.25 V
Quiescent Supply Current I
DD
6 10 mA
Turn-On Time Power on to ½°/sec of final or within
1% of final value (whichever comes
first)
100 500 ms
SWITCHING REGULATOR
See the Application Circuit section
Required CP5 Supply Current I
CP5
0.1 1 mA
Internal Operating Voltage V
CP5
22 25 V
Internal Resistance R
on
5 V Supply 50 Ω
3.3 V Supply 75 Ω
Required Current Current requirement for external
inductor
Ityp
5 V Supply 35 mA
3.3 V Supply 20 mA
TEMPERATURE RANGE T
MIN
, T
MAX
40 +105 °C
1 Minimum/maximum limit is at least ±4 sigma based on characterization.
2 Cross-axis sensitivity specification does not include effects due to device mounting on a PCB.
3 Minimum/maximum limits are guaranteed by design.
Data Sheet ADXRS810
Rev. 0 | Page 5 of 28
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Acceleration (Any Axis, Unpowered,
0.5 ms)
2000 g
Acceleration (Any Axis, Powered, 0.5 ms) 2000 g
Supply Voltage (PDD) –0.3 V to +6.0 V
Output Short-Circuit Duration (Any Pin to
Common)
Indefinite
Operating Temperature Range −40°C to +125°C
Storage Temperature −40°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
JC Unit
16-Lead SOIC 191.5 25 °C/W
RATE SENSITIVE AXIS
The ADXRS810 is available in a SOIC package. The device
transmits a positive-going LSB count for clockwise rotation
about the axis normal to the package top. Conversely, a
negative-going LSB count is transmitted for counterclockwise
rotation about the Z-axis.
RATE
AXIS
+
SOIC PACKAGE
9
16
11034-002
Figure 2. RATEOUT Signal Increases with Clockwise Rotation
ESD CAUTION
ADXRS810 Data Sheet
Rev. 0 | Page 6 of 28
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
ADXRS810
TOP VIEW
(No t t o Scal e)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
SCLK
MOSI
AVDD
DVSS
RSVD
AVSS
RSVD
CP5
DVDD
RSVD
RSVD
MISO
PDD
PSS
VX
CS
11034-003
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 DV
DD
Digital Regulated Voltage Output. See the Application Circuit section.
2, 3, 10, 12 RSVD Reserved for Analog Devices, Inc., Use Only. Connect to GND.
1
4 CS Chip Select.
5 MISO Master In/Slave Out.
6 P
DD
Supply Voltage.
7 P
SS
Switching Regulator Ground (GND).
8 V
X
High Voltage Switching Node. See the Application Circuit section.
9 CP5 High Voltage Supply. See the Application Circuit section.
11 AV
SS
Analog Ground (GND).
13 DV
SS
Digital Signal Ground (GND).
14
AVDD
Analog Regulated Voltage Output. See the Application Circuit section.
15 MOSI Master Out/Slave In.
16 SCLK SPI Clock.
1 The RSVD pins must be connected to PCB ground. For enhanced product diagnosis, make this connection through a trace and not directly through the package
footprint. See the Suggested PCB Layout section for proper connection to the PCB.
Data Sheet ADXRS810
Rev. 0 | Page 7 of 28
TYPICAL PERFORMANCE CHARACTERISTICS
N > 1000, unless otherwise noted.
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
PERCENTAGE OF POPULATION (%)
–2.0 –1.5 –1.0 –0.5 0
RATE OUT(°/sec)
0.5 1.0 1.5 2.0
11034-008
–40°C
+105°C
Figure 4. Initial Null Output
NULL OUTPUT/sec)
–4
–3
–2
–1
0
1
2
3
4
–40 –30 –20 –10 010 20 30 40 50 60 70 80 90 100 110
TEMPERATURE (°C)
11034-010
Figure 5. Typical Null Output Response over Temperature (N > 100)
1
0.1
0.01
0.001
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
AVERAGING T IME ( Hou rs)
ROOT ALL AN V ARIANCE (°/ sec)
11034-016
Figure 6. Typical Root Allan Variance at 105°C
78 79 80
SENSITIVITY (LS B/° /sec)
81 82
0.10
0
0.20
0.30
0.40
0.50
PERCENTAGE OF POPULATION (%)
11034-007
–40°C
+105°C
Figure 7. Sensitivity
SENSITIVITY (LSB/°/sec)
TEMPERATURE (°C)
76
77
78
79
80
81
82
83
11034-012
–40 –30 –20 –10 010 20 30 40 50 60 70 80 90 100 110
Figure 8. Sensitivity over Temperature (N > 100)
1
0.1
0.01
0.001
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
AVERAGING T IME ( Hou rs)
ROOT ALL AN V ARIANCE (°/ sec)
11034-013
Figure 9. Typical Root Allan Variance at 40°C
ADXRS810 Data Sheet
Rev. 0 | Page 8 of 28
1
0.1
0.01
0.001
0.0001 510 300100
FRE QUENCY ( Hz )
11034-022
GYRO OUTPUT (°/s/Hz)
Figure 10. DUT Typical Response to Random Vibration (5 Hz to 5 kHz at
15 g RMS)
40
30
20
10
–40
–30
–20
–10
0
0.10 0.15 0.20 0.25 0.30 0.35 0.40
GYRO OUTPUT (°/s)
60
40
50
30
20
–20
–10
0
10
INP UT ACCEL E RATI ON (g)
TIME ( sec)
DUT RESPONSE (°/s)
REF
11034-021
Figure 11. DUT Typical Response to 50 g, 10 ms Half-Sine Shock Test
Data Sheet ADXRS810
Rev. 0 | Page 9 of 28
THEORY OF OPERATION
The ADXRS810 operates on the principle of a resonator gyro.
Figure 12 presents a simplified illustration of one of four
polysilicon sensing structures. Each sensing structure contains
a dither frame that is electrostatically driven to resonance. This
produces the necessary velocity element to produce a Coriolis
force when experiencing angular rate. The ADXRS810 is
designed to sense Z-axis (yaw) angular rate.
When the sensing structure is exposed to angular rate, the
resulting Coriolis force is coupled into an outer sense frame,
which contains movable fingers that are placed between fixed
pickoff fingers. This forms a capacitive pickoff structure that
senses Coriolis motion. The resulting signal is fed to a series of
gain and demodulation stages that produce the electrical rate
signal output. The quad-sensor design rejects linear and angular
acceleration, including external g-forces and vibration. This is
achieved by mechanically coupling the four sensing structures
such that external g-forces appear as common-mode signals
that can be removed by the fully differential architecture
implemented in the ADXRS810.
X
Y
Z
11034-023
Figure 12. Simplified Gyro Sense Structure
The resonator requires 22.5 V (typical) for operation. Because
only 5 V is typically available in most applications, a switching
regulator is included on-chip. If an external high voltage supply
is available, the inductor and diode can be omitted, and this
supply can be connected to CP5. See the Application Circuit
section.
CONTINUOUS SELF-TEST
The ADXRS810 gyroscope uses a complete electromechanical
self-test. An electrostatic force is applied to the gyroscope
frame, resulting in a deflection of the capacitive sense fingers.
This deflection is exactly equivalent to deflection that occurs
as a result of the external rate input. The output from the beam
structure is processed by the same signal chain as a true rate
output signal, providing complete coverage of both the
electrical and mechanical components.
The electromechanical self-test is performed continuously
during operation at a rate higher than the output bandwidth
of the device. The self-test routine generates equivalent positive
and negative rate deflections. This information can then be
filtered such that there is no overall effect on the demodulated
rate output.
RATE SIGNAL WITH
CONTINUOUS SELF-TEST SIGNAL
SELF-TEST AMPLITUDE, INTERNALLY
COMPARED TO THE SPECIFICATION
TABLE LIMITS
LOW FREQUENCY RATE INFORMATION
11034-024
Figure 13. Continuous Self-Test Demodulation
The difference amplitude between the positive and negative
self-test deflections is filtered to f0/8000 (~1.95 Hz) and con-
tinuously monitored and compared to hardcoded self-test
limits. If the measured amplitude exceeds these limits (listed
in the Specifications table), one of two error conditions is
asserted, depending on the magnitude of self-test error. For
less severe self-test error magnitudes, the CST bit of the fault
register is asserted; however, the status bits (ST[1:0]) in the
sensor data response remain set to 0b01 for valid sensor data.
For more severe self-test errors, the CST bit of the fault register
is asserted, and the status bits (ST[1:0]) in the sensor data
response are set to 0b00 for invalid sensor data. The thresholds
for both failure conditions are listed in the Specifications table.
The user can access the self-test information by issuing a read
command to the self-test memory register (Address 0x04). See
the SPI Communication ProtocolApplications section for
more information about error reporting.
ADXRS810 Data Sheet
Rev. 0 | Page 10 of 28
APPLICATIONS INFORMATION
CALIBRATED PERFORMANCE
Each ADXRS810 gyroscope uses internal EEPROM memory to
store its temperature calibration information. The calibration
information is encoded into the device during factory testing.
The calibration data is used to perform offset, gain, and self-
test corrections over temperature. Storing this information
internally removes the burden from the customer of performing
system level temperature calibration.
MECHANICAL CONSIDERATIONS FOR MOUNTING
Mount the ADXRS810 in a location close to a hard mounting
point of the printed circuit board (PCB) to the case. Mounting
the ADXRS810 at an unsupported PCB location (that is, at the
end of a lever or in the middle of a trampoline), as shown in
Figure 14, may result in apparent measurement errors because
the gyroscope is subject to the resonant vibration of the PCB.
Locating the gyroscope near a hard mounting point helps
ensure that any PCB resonances at the gyroscope are above the
frequency at which harmful aliasing with the internal electron-
ics can occur. To ensure that aliased signals do not couple into
the baseband measurement range, it is recommended that the
module be designed such that the first system level resonance
occurs at a frequency higher than 800 Hz.
MOUNTING POINTS
PCB
GYROSCOPE
11034-025
Figure 14. Where Not to Mount a Gyroscope
APPLICATION CIRCUIT
Figure 15 and Figure 16 show the recommended application
circuits for the ADXRS810 gyroscope. These application circuits
provide a connection reference for the SOIC package. Note that
DVDD, AVDD, and PDD are all individually connected to ground
through 1 μF capacitors. Do not connect these supplies together.
Additionally, an external diode and inductor must be connected
for proper operation of the internal shunt regulator. These
components allow for the internal resonator drive voltage to
reach its required level, as listed in the Specifications table.
Figure 16 presents an alternate method of operation for the
ADXRS810 gyroscope. If the user has access to a power source
that is capable of supplying a current of between 0.1 mA and
1 mA to the CP5 pin, this alternate source can be used to drive
the internal regulator. In this application circuit, the external
diode and inductor can be omitted and VX left as a no connect.
The required supply current to the CP5 pin can be met in one
of two ways. Either a current source can be connected to CP5,
such that the stated current requirement is satisfied, or a high
voltage supply can be connected to CP5 through a resistor. For
both methods, take precautions such that variations to the
supply do not result in the current exceeding the 0.1 mA
to 1 mA limits. See the Specifications table for a complete
description of the parameters related to the shunt regulator.
Table 5.
Component Qty Description
Inductor 1 470 μH (560 μH)
Diode 1 >24 V breakdown voltage
Capacitor 3 1 μF
Capacitor 1 100 nF
Note the following schematic recommendations:
Leakage current on the CP5 pin should be kept to a
minimum. All sources of leakage, including reverse leakage
current through the diode and PCB surface leakage, should
account for not more than 70 µA. For most applications,
the diode is the primary source of leakage current.
Applications that operate at 3.3 V should use an inductor
value of 560 μH to ensure proper operation of the internal
boost regulator. For all applications, the inductor must be
capable for 50 mA of peak current.
116
DVDD
RSVD
RSVD
CS
MISO
PDD
VX
PSS
SCLK
MOSI
AVDD
DVSS
RSVD
AVSS
CP5
RSVD 100nF
1µF
1µF
3.3V TO 5V
1µF
DIODE
>24V BREAKDOW N
470µH
GND
GND
GND
TO µC
TO µC
TO µC
TO µC
11034-026
Figure 15. Recommended ADXRS810 Application Circuit
1µF
GND
TO µC
TO µC
116
DV
DD
RSVD
RSVD
CS
MISO
P
DD
V
X
P
SS
SCLK
MOSI
AV
DD
DV
SS
RSVD
AV
SS
CP5
RSVD 100nF
1µF
1µF
3.3V TO 5V
GND GND
0.1mA TO 1mA
HIGH VOLTAGE SUPPLY
TO µC
TO µC
11034-027
Figure 16. ADXRS810 Alternate Application Circuit
Data Sheet ADXRS810
Rev. 0 | Page 11 of 28
ADXRS810 SIGNAL CHAIN TIMING
The ADXRS810 primary signal chain is in Figure 17. It is the
series of necessary functional circuit blocks through which
the rate data is generated and processed. This sequence of
electromechanical elements determines how quickly the
device is capable of translating an external rate input stimulus
into an SPI word to be sent to the master device. The group
delay, which is a function of the filter characteristic, is the time
required for the output of the low-pass filter to be within 10%
of the external rate input and is seen to be ~4 ms. Additional
delay can be observed due to the timing of SPI transactions and
the population of the rate data into the internal device registers.
This delay is broken down in Figure 17 such that the delay
through each element of the signal chain is presented.
The transfer function for the rate data low-pass filter (LPF) is
given as
2
1
64
1
1
Z
Z
where:
(typ)kHz2.15
11
0
f
T
And the transfer function for the continuous self-test LPF is
given as
1
6364
1
Z
where:
(typ)
kHz2.15
1616
0
f
T
Z- AX IS ANGUL AR
RATE SENSOR
SPI
TRANSACTION
REGISTERS/MEMORY
BAND-PASS
FILTER
ARITHMETIC
LOG IC UNI T
DEMOD
12-BIT ADC
PRIMARY S IG NAL CHAIN
<5µs
DELAY
4ms
GROUP DELAY
<2.2ms
DELAY
<64ms
GROUP DELAY
RATE DATA
LPF
CONTINUOUS
SELF-TEST
LPF
<5µs
DELAY <5µs
DELAY
11034-030
Figure 17. ADXRS810 Primary Signal Chain and Associated Delays
ADXRS810 Data Sheet
Rev. 0 | Page 12 of 28
SPI COMMUNICATIONS CHARACTERISTICS
The following conditions apply to the SPI command and
response timing characteristics in Table 6:
All timing parameters are guaranteed through
characterization.
All timing is shown with respect to 10% of PDD and 90% of
the actual delivered voltage waveform.
Parameters are valid for 3.0 V ≤ PDD ≤ 5.5 V.
Capacitive load for all signals is assumed to be ≤80 pF.
Ambient temperature is −40°C ≤ TA ≤ +105°C.
The MISO pull-up load is 47 kΩ or 110 μA.
CS
SCLK
tSCLKhi tSCLKlo
tSCLK
tLEAD tF
tRtCSlag
tTD
MSB LSB
MISO
tAtMISOlag
tVtDIS
tHIGH
MSB LSB
MOSI
tSU
11034-032
Figure 18. SPI Timings Drawing
Table 6. SPI Command/Response Timing Characteristics
Symbol
Function
Min
Max
Unit
f
OP
SPI operating frequency 8.08 MHz
tSCLKLhi
Clock (SCLK) high time
½ tSCLK13
ns
t
SCLKIo
Clock (SCLK) low time ½ t
SCLK
13
ns
t
SCLK
SCLK period 123.7 ns
t
F
Clock (SCLK) fall time 5.5 13 ns
t
R
Clock (SCLK) rise time 5.5 13 ns
t
SU
Data input (MOSI) setup time 37 ns
t
HIGH
Data input (MOSI) hold time 49 ns
t
A
Data output (MISO) access time 20 ns
t
V
Data output (MISO) valid after SCLK 32.5 ns
t
MISOlag
Data output (MISO) lag time 0 ns
t
DIS
Data output (MISO) disable time 40 ns
t
LEAD
Enable (
CS
) lead time
½ t
SCLK
ns
tCSlag Enable (CS) lag time ½ tSCLK ns
t
TD
Sequential transfer delay 0.1
µs
Data Sheet ADXRS810
Rev. 0 | Page 13 of 28
SPI COMMUNICATION PROTOCOL—APPLICATIONS
DEVICE DATA LATCHING
To allow for rapid acquisition of data from the ADXRS810,
device data latching is implemented as shown in Figure 19.
Upon assertion of chip select, the data in the device is latched
into memory. When the full MOSI command is received, and
chip select deasserted, the appropriate data is shifted into the
SPI port registers in preparation for the next sequential
command/response exchange. This allows for an exceedingly
fast sequential transfer delay of 0.1 µs (see Table 6). As a design
precaution, it should be noted that the transmitted data is only
as recent as the sequential transmission delay implemented by
the system. Conditions that result in a sequential transfer delay
of several seconds cause the next sequential device response to
contain data that is several seconds old.
32 CLOCK
CYCLES
32 CLOCK
CYCLES 32 CLOCK
CYCLES
SCLK
MOSI
MISO
COM M AND N
0x…
RESPONSE N – 1
0x00000001 RESPONSE N
0x… RESPONSE N + 1
0x…
COM M AND N + 1
0x… COM M AND N + 2
0x…
DEVICE DAT A IS LATCHE D AFT E R THE
ASSE RTION O F CS. LAT CHE D DATA I S
TRANS M ITTED DURING THE NE X T
SEQUENT IAL COMMAND/RES P ONSE
EXCHANGE.
CS
11034-033
Figure 19. Device Data Latching
ADXRS810 Data Sheet
Rev. 0 | Page 14 of 28
COMMAND/RESPONSE
Input/output is handled through a 32-bit command/response
SPI interface. The command/response SPI interface is struc-
tured such that the response to a command is issued during
the next sequential SPI exchange. As shown in Figure 20, the
response (Response N) to a specific command (Command N)
is issued upon receipt of the next command (Command N + 1).
For the ADXRS810, the clock phase = clock polarity = 0.
Additionally, the device response to the initial command is
0x00000001. This prevents the transmission of random data
to the master device upon the initial command/response
exchange.
MOSI
MISO
32 CLOCK
CYCLES
SCLK
COM M AND N
RESPONSE N – 1
32 CLOCK
CYCLES
COM M AND N + 1
RESPONSE N
CS
11034-031
Figure 20. SPI Protocol
Data Sheet ADXRS810
Rev. 0 | Page 15 of 28
SPI COMMUNICATION PROTOCOL—BIT DEFINITIONS
Table 7. SPI Signals
Signal Symbol Description
Serial Clock SCLK Exactly 32 clock cycles when CS is active
Chip Select
CS
Active low
Master Out/Slave In MOSI Data sent to the gyro device from the main controller
Master In/Slave Out MISO Data sent to the main controller from the gyro
Table 8. SPI Commands
Command
Bit
31
30
29
28 27
26
25
24
23
22
21
20 19
18
17
16
15
14
13
12
11
10 9 8
7
6
5
4
3 2 1
0
Sensor
Data
SQ1
SQ0
1
SQ2
CHK
P
Read
1
0
0
SM2 SM1
SM0
A8
A7
A6
A5
A4
A3 A2
A1
A0
P
Write
0
1
0
SM2 SM1
SM0
A8
A7
A6
A5
A4
A3 A2
A1
A0
D15
D14
D13
D12
D11
D10
D9 D8 D7
D6
D5
D4
D3
D2 D1 D0
P
Table 9. SPI Responses
Command
Bit
31 30 29 28
27 26 25 24 23 22 21 20 19 18 17 16 15 14
13 12
11
10 9 8 7 6 5 4 3 2 1 0
Sensor
Data
SQ2
SQ1
SQ0
P0 ST1
ST0
D15
D14
D13 D12 D11 D10
D9 D8 D7 D6 D5 D4
D3
D2
D1
D0
PLL
Q NVM
POR
PWR
CST
CHK
P1
Read 0 1 0 P0 1 1 1 0 SM2
SM1
SM0
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2 D1
D0 P1
Write 0 0 1 P0 1 1 1 0 SM2
SM1
SM0
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2 D1
D0 P1
R/W
Error
0 0 0 P0 1 1 1 0 SM2
SM1
SM0
0 0 SPI RE DU PLL
Q NVM
POR
PWR
CST
CHK
P1
COMMAND/RESPONSE BIT DESCRIPTIONS
Table 10. Quick GuideBit Definitions for the SPI Interface
Bit Description
[SQ2:SQ0] Sequence bits (from master)
[A8:A0] Register address
[D15:D0] Data
P
Command odd parity
SPI SPI command/response
RE Request error
[SM2:SM0] Sensor module bits (from master)
DU Data unavailable
[ST1:ST0] Status bits
P0 Response, odd parity, Bits[31:16]
P1 Response, odd parity, Bits[31:0]
ADXRS810 Data Sheet
Rev. 0 | Page 16 of 28
SQ2:SQ0
This field provides the system with a means of synchronizing
the data samples received from multiple sensors. To facilitate
correct synchronization, the ADXRS810 gyroscope includes the
SQ[2:0] field in the response as it was received in the request.
SM2:SM0
Sensor module bits from the master device. These bits are not
implemented in the ADXRS810 but are hardcoded to 000 for
all occurrences.
A8:A0
These bits represent the memory address from which device
data is read or to which information is written. These bits
should be supplied by the master only when the memory
registers are being accessed and are ignored for all sensor
data requests. See the Memory Register Definitions section
for a complete description of the available memory registers.
D15:D0
These 16 bits of device data can contain any of the following:
Master: data to be written to a memory register as specified
in A8:A0.
Slave: sensor rate output data.
Slave: device data read from the memory register specified
in A8:A0, as well as data from the next sequential register.
Slave: for a write command, the 16-bit data that is written
to the specified memory register is reflected back to the
master device for correlation.
SPI
The SPI bit is set when any of the following occurs:
Too many/too few bits are transmitted
A message from the control module contains a parity error
The occurrence of a SPI error results in the device issuing
a R/W error response (see Table 9), regardless of the SPI
command type (see Table 8) issued by the master device.
ST1:ST0
The ST1 and ST0 status bits are used to signal to the master
device the type of data contained in the response message.
The status bits are decoded as shown in Table 11.
Table 11.
ST[1:0] Content in Bits[D15:D0]
00 Error data for sensor data response
01 Valid sensor data
10 Sensor self-test data
11 Read/write response
There are two independent conditions that can result in the ST
bits being set to 0b00 during a sensor data response.
The self-test response is sufficiently different from its
nominal value. See the Specifications table for the
appropriate limits.
A PLL fault is active.
P
Parity bit required for all master-to-slave data transmissions.
Communications protocol requires one parity bit to achieve
odd parity for the entire 32-bit command. Bits that are in don’t
care positions are still factored into the parity calculation.
P0
Parity bit that establishes odd parity for Bits[31:16] of the device
response.
P1
Parity bit that establishes odd parity for the entire 32-bit device
response.
RE
Communications error bit transmitted from the ADXRS810
device to the control module. Request errors can occur when
An invalid command is sent from the control module
A read/write command specifies an invalid memory
register
A write command attempted to write to a nonwritable
memory register
DU
Once the chip select pin (CS) is deasserted, wait 0.1 µs before
reasserting the chip select pin (CS) and initiating another
command/response frame with the device. Failure to adhere
to this timing specification may result in a data unavailable
(DU) error.
Data Sheet ADXRS810
Rev. 0 | Page 17 of 28
ADXRS810 FAULT REGISTER BIT DEFINITIONS
Table 12 describes the bits available for signaling faults to the user.
Table 12. Quick GuideFault Register Bit Definitions
Bit Description
PLL PLL failure
Q Quadrature error
NVM NVM memory fault
POR Power-on/reset failed to initialize
UV
Regulator undervoltage
AMP
Amplitude detection failure
PWR Power regulation failed: overvoltage/undervoltage
CST Continuous self-test failure
CHK Check; generate faults
OV Regulator overvoltage
FAIL Failure that sets the ST[1:0] bits to 0b00
The individual bits of the fault register are updated asynch-
ronously, depending on their respective detection criteria;
however, it is recommended that the fault register be read at
a rate of at least 100 Hz. Once asserted, individual status bits
are not deasserted until they are read by the master device.
If the error persists after a fault register read, the status bit
immediately reasserts and remains asserted until the next
sequential command/response exchange. The FAULT0 register
is appended to every sensor data request. The remaining fault
information can be accessed by issuing a read command to
Address 0x0A.
PLL
This bit indicates that the device had a failure in the phase lock
loop functional circuit block, which occurs when the PLL fails
to achieve sync with the resonator structure. If the PLL status
flag is active, the ST bits of the sensor data response are set to
0b00, indicating that the response contains potentially invalid
rate data.
Q
A Q fault can be asserted based on two independent quad-
rature calculations. Located in the QUAD1 memory register
(Address 0x08) is a value corresponding to the total instanta-
neous quadrature present in the device. If this value exceeds
4096 LSBs, a Q fault is issued. Separately, an internal quadrature
accumulator records the amount of quadrature correction
performed by the ADXRS810. A Q fault is issued after the
quadrature error present in the device contributes to an
equivalent of 4°/sec (typical) of rate offset.
NVM
An NVM error is transmitted to the control module if the
internal NVM data fails a checksum calculation. This check
is performed once every 50 µs and does not include the PID
memory register.
POR
An internal check is performed on device startup to ensure
that the volatile memory of the device is functional. This is
accomplished by programming a known value from the device’s
ROM into a volatile memory register. This value is continuously
compared to the known value in ROM every 1 µs for the dura-
tion of the device operation. If the value stored in the volatile
memory changes, or does not match the value stored in ROM,
the POR error flag is asserted. The value stored in ROM is
rewritten to the volatile memory upon a device power cycle.
PWR
The device performs a continuous check of the internal 3 V
regulated voltage level. If either an overvoltage (OV) or under-
voltage (UV) fault is asserted, the PWR bit is asserted as well.
These conditions occur when the regulated voltage is observed
to be either more than 3.3 V or less than 2.77 V. An internal
low-pass filter removes high frequency glitching effects so that
the PWR bit is not asserted unnecessarily. To determine if the
fault is a result of an overvoltage or undervoltage condition, the
OV and UV fault bits must be analyzed.
CST
The ADXRS810 is designed with continuous self-test function-
ality. Measured self-test amplitudes are compared against the
limits presented in the Specifications table. Deviation from this
value results in a reported self-test error. There are two thresholds
for a self-test failure.
A self-test value > ±320 LSBs from nominal results in an
assertion of the self-test flag in the fault register.
A self-test value > ±1280 LSBs from nominal results in
both an assertion of the self-test flag in the fault register
and setting of the ST[1:0] bits to 0b00, indicating that the
rate data contained in the sensor data response is potentially
invalid.
ADXRS810 Data Sheet
Rev. 0 | Page 18 of 28
CHK
The CHK bit is transmitted by the control module to the
ADXRS810 as a method of generating faults. By asserting
the CHK bit, the device creates conditions that result in the
generation of all faults represented through the fault register.
For example, the self-test amplitude is deliberately altered so
that it exceeds the fault detection threshold, resulting in a self-
test error. In this way, the device is capable of checking both
its ability to detect a fault condition and its ability to report
that fault to the control module.
The fault conditions are initiated nearly simultaneously;
however, the timing for receiving fault codes when the CHK
bit is asserted is dependent upon the time required to generate
each unique fault. It takes not more than 50 ms for all of the
internal faults to be generated and the fault register to be
updated to reflect the condition of the device. Until the CHK
bit is cleared, the ST[1:0] status bits are set to 0b10, indicating
that the data should be interpreted by the control module
as self-test data. After the CHK bit is deasserted, the fault
conditions require an additional 50 ms to decay and the
device to return to normal operation. See Figure 21 for
the proper methodology for asserting the CHK bit.
OV
The OV fault bit asserts when the internally regulated voltage
(nominally 3 V) is observed to exceed 3.3 V. This measurement
is low pass filtered to prevent artifacts such as noise spikes from
asserting a fault condition. When an OV fault occurs, the PWR
fault bit is asserted simultaneously. Because the OV fault bit is
not transmitted as part of a sensor data request, it is recommended
that the user read back the FAULT1 and FAULT0 memory
registers upon the assertion of a PWR error. This allows the
user to determine the specific error condition.
UV
The UV fault bit asserts when the internally regulated
voltage (nominally 3 V) is observed to be less than 2.77 V.
This measurement is low pass filtered to prevent artifacts such
as noise spikes from asserting a fault condition. When a UV
fault occurs, the PWR fault bit is asserted simultaneously.
Because the UV fault bit is not transmitted as part of a sensor
data request, it is recommended that the user read back the
FAULT1 and FAULT0 memory registers upon the assertion of
a PWR error. This allows the user to determine the specific
error condition.
FAIL
The fail flag is asserted when a condition arises such that the
ST[0:1] bits are set to 0b00. This indicates that the device has
experienced a gross failure and that the sensor data could
potentially be invalid.
AMP
The AMP fault bit is asserted when the measured amplitude
of the silicon resonator has been significantly reduced. This
condition can occur if the voltage supplied to CP5 has fallen
below the requirements of the internal voltage regulator. This
fault bit is ORed with the CST fault such that during a sensor
data request the CST bit position represents either an AMP
failure or a CST failure. The full fault status register, FAULT0,
can then be read from memory to validate the specific failure.
Data Sheet ADXRS810
Rev. 0 | Page 19 of 28
CHK BIT ASSERTION: RECOMMENDED START-UP
ROUTINE
Figure 21 illustrates a recommended start-up routine that can
be implemented by the user. Alternate start-up sequences can
be employed; however, take care that the response from the
ADXRS810 is handled correctly. If implemented immediately
after power is applied to the device, the total time to implement
the following fault detection routine is approximately 200 ms.
As described in the Device Data Latching section, the data
present in the device upon the assertion of the CS signal is
used in the next sequential command/response exchange.
This results in an apparent one transaction delay before the
data resulting from the assertion of the CHK bit is reported by
the device. For all other read/write interactions with the device,
no such delay exists, and the MOSI command is serviced during
the next sequential command/ response exchange. Note that
when the CHK bit is deasserted, if the user tries to obtain data
from the device before the CST fault flag has cleared, the device
reports the data as error data.
0x2000 00000x2000 00000x2000 0003 0x2000 0000
ANOTHER 50ms DEL AY MUS T
BE OBSERVED TO ALL O W
THE FAULT CONDIT IONS TO
CLE AR. IF T HE DE VICE I S
FUNCTIONI NG PRO P E RLY,
THE MISO RESPONSE
CONTAINS ALL ACT IVE
FAULTS , AS WEL L AS HAV I NG
SET THE MESSAGE F ORMAT
TO SELF-TEST DATA. THIS IS
INDICATE D THRO UGH THE S T
BITS BEING SET TO 0b10.
A 50ms DELAY IS RE Q UIRED
SO THAT T HE GENE RATI O N
OF FAULTS WITHIN THE
DEVICE I S ALL O WED T O
COM P L E TE. HOWEVE R,
BECAUSE T HE DE V ICE DAT A
IS L ATCHED BE FORE T HE
CHK BIT IS ASSERTED, THE
DEVICE RESPONSE DURING
THIS COMMAND/RESPONSE
EXCHANG E DOES NO T
CONT AIN F AUL T
INFORM ATI O N. T HI S
RESPONSE CAN BE
DISCARDED.
ONCE T HE 100ms ST ART-UP
TI M E HAS O CCURRE D, T HE
MASTER DEVICE IS FREE TO
ASSERT THE CHK BIT AND
START THE PROCESS OF
INT E RNAL ERRO R
CHECKING. DURING THE
FI RS T COM M AND/
RESPONSE E X CHANG E
AFT E R P OWE R- ON, T HE
ADXRS800 IS DES IGNE D T O
ISSUE A PREDEFINED
RESPONSE.
POWER IS
APPLIED TO
THE DEVICE.
WAI T 100ms TO
ALLOW FOR
THE I NTERNAL
CIRCUI TRY T O
BE INITIALIZED.
THE FAULT BITS OF THE
ADXRS800 REM AIN ACT I V E
UNTI L CL E ARE D. DUE T O
THE REQUIRED DECAY
PERI OD FOR EACH FAUL T
CONDITIO N, FAULT
CONDI TI ONS REM AI N
PRESENT UPON THE
IMM E DIAT E DE ASS E RTI O N
OF THE CHK BI T. T HIS
RESULTS IN A SECOND
SEQUENTIAL RESPONSE IN
WHI CH THE FAULT BI TS ARE
ASSE RT E D. AGAIN, T HE
RESPONSE IS FORMATTED
AS SELF-TEST DATA
INDICATING THAT T HE
FAULT BITS HAVE BEEN SET
INTENTIONALLY.
ALL FAULT
CONDI TI ONS ARE
CLE ARED, A ND ALL
SUBSE Q UE NT DATA
EXCHANGES NEED
ONLY OBSERVE
THE SEQUENTIAL
TRANSFER DELAY
TIMING
PARAMETER.
0x…FF OR 0x…FE
(PARITY DE P E NDE NT) 0x…FF OR 0x…FE
(PARITY DE P E NDE NT )
0x…0x0000001
MOSI
SCLK
CS
MISO
32 CLO CK
CYCLES 32 C LO CK
CYCLES 32 CLOCK
CYCLES 32 CLO CK
CYCLES
DATA LATCH POI NT
MO S I : SE NS OR DATA RE QUEST
CHK COM MAND A SSERTED
MI SO: STANDARD INIT I AL
RESPONSE
MOS I: S ENS OR DAT A
REQUE ST; CLEARS T HE
CHK BIT
MISO: SENSOR DATA
RESPONSE
MO SI: SE NS O R DATA
REQUEST
MI SO: CHK RESPONSE
ST[1:0] = 0b10
MOS I: SE NSOR DATA
REQUEST
MIS O : CHK RE SP ONSE
ST[1:0] = 0b10
XX X
t = 100m s t = 150ms t = 200ms t = 200m s +
t
TD t = 200ms + 2
t
TD
11034-034
Figure 21. Recommended Start-Up Sequence
ADXRS810 Data Sheet
Rev. 0 | Page 20 of 28
SPI RATE DATA FORMAT
The ADXRS810 gyroscope transmits rate data in a 16-bit
format as part of a 32-bit SPI data frame. See Table 9 for the
full 32-bit format of the sensor data request response. The
rate data is transmitted MSB first, from D15 to D0. The data
is formatted as a twos complement number, with a scale factor
of 80 LSBs/°/sec. Therefore, the highest obtainable value for
positive (clockwise) rotation is 0x7FFF (decimal +32,767)
and for counterclockwise rotation is 0x8000 (decimal 32,768).
Performance of the device is not guaranteed above ±24,000 LSBs
(±300°/sec).
Table 13. ADXRS810 Rate Data Table
14-Bit Rate Data
Data Type Description Decimal (LSBs) Hex (D15:D0)
32,767 0x7FFF Rate data (not guaranteed) Maximum possible positive data value
24,000 0x5DC0 Rate data 300°/sec rotation (positive FSR)
10,000 0x2710 Rate data 125°/sec rotation
1000 0x03E8 Rate data 12.5°/sec rotation
100 0x0064 Rate data 1.25°/sec rotation
12 0x000C Rate data 0.15°/sec rotation
11 0x000B Rate data 0.1375°/sec rotation
10 0x000A Rate data 0.125°/sec rotation
3 0x0003 Rate data 0.015°/sec rotation
2 0x0002 Rate data 0.01375°/sec rotation
1 0x0001 Rate data 0.0125°/sec rotation
0 0x0000 Rate data 0 rotation value
−1 0xFFFF Rate data 0.0125°/sec rotation
−2
0xFFFE
Rate data
0.01375°/sec rotation
−3 0xFFFD Rate data 0.015°/sec rotation
10 0xFFF6 Rate data 0.125°/sec rotation
11 0xFFF5 Rate data 0.1375°/sec rotation
12 0xFFF4 Rate data 0.15°/sec rotation
100 0xFF9C Rate data 1.25°/sec rotation
1000 0xFC18 Rate data 12.5°/sec rotation
10, 000 0xD8F0 Rate data 125°/sec rotation
24,000 0xA240 Rate data 300°/sec rotation (negative FSR)
32,768 0x8000 Rate data (not guaranteed) Maximum possible negative data value
Data Sheet ADXRS810
Rev. 0 | Page 21 of 28
ADXRS810 MEMORY MAP
Table 14 contains a list of the memory registers that are
available to be read by the user. See the Command/Response
section for the proper input sequence to read a specific
memory register. Each memory register comprises eight bits
of data; however, when a read request is performed, the data
is always returned as a 16-bit message. This is accomplished
by appending the data from the next sequential register to
the memory address that is specified. Data is transmitted
MSB first. For proper acquisition of data from the memory
register, the read request should be made to the even num-
bered register address only. The memory map registers are
described in the Memory Register Definitions section.
Table 14. ADXRS810 Memory Map1
Addr Name MSB
LSB
0x00 RATE1 RTE15 RTE14 RTE13 RTE12 RTE11 RTE10 RTE9 RTE8
0x01 RATE0 RTE7 RTE6 RTE5 RTE4 RTE3 RTE2 RTE1 RTE0
0x02 TEM1 TEM9 TEM8 TEM7 TEM6 TEM5 TEM4 TEM3 TEM2
0x03 TEM0 TEM1 TEM0 X X X X X X
0x04 LOCST1 LCST15 LCST14 LCST13 LCST12 LCST11 LCST10 LCST9 LCST8
0x05 LOCST0 LCST7 LCST6 LCST5 LCST4 LCST3 LCST2 LCST1 LCST0
0x06 HICST1 HCST15 HCST14 HCST13 HCST12 HCST11 HCST10 HCST9 HCST8
0x07 HICST0 HCST7 HCST6 HCST5 HCST4 HCST3 HCST2 HCST1 HCST0
0x08 QUAD1 QAD15 QAD14 QAD13 QAD12 QAD11 QAD10 QAD9 QAD8
0x09 QUAD0 QAD7 QAD6 QAD5 QAD4 QAD3 QAD2 QAD1 QAD0
0x0A FAULT1 X X X X FAIL AMP OV UV
0x0B FAULT0 PLL Q NVM POR PWR CST CHK 0
0x0C PID1 PIDB15 PIDB14 PIDB13 PIDB12 PIDB11 PIDB10 PIDB9 PIDB8
0x0D PID0 PIDB7 PIDB6 PIDB5 PIDB4 PIDB3 PIDB2 PIDB1 PIDB0
0x0E SN3 SNB31 SNB30 SNB29 SNB28 SNB27 SNB26 SNB25 SNB24
0x0F SN2 SNB23 SNB22 SNB21 SNB20 SNB19 SNB18 SNB17 SNB16
0x10 SN1 SNB15 SNB14 SNB13 SNB12 SNB11 SNB10 SNB9 SNB8
0x11 SN0 SNB7 SNB6 SNB5 SNB4 SNB3 SNB2 SNB1 SNB0
1 X = don’t care.
ADXRS810 Data Sheet
Rev. 0 | Page 22 of 28
MEMORY REGISTER DEFINITIONS
The SPI-accessible memory registers are described in this
section. As described in the previous section, when requesting
data from a memory register, only the first sequential memory
address need be addressed. The data returned by the device
contains 16 bits of memory register information. Bits[15:8]
contain the MSB of the requested information, and Bits[7:0]
contain the LSB.
In each of the following register sections, the update rate and
scale factors are called out for convenience.
0x00 RATE1, 0x01 RATE0
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Register Update Rate: f0/32 (~485 Hz)
Scale Factor: 80 LSBs/°/sec
The rate registers contain the temperature compensated rate
output of the device filtered to f0/200 (~77.5Hz). This data can
also be accessed by issuing a sensor data read request to the
device. The data is presented as a 16-bit, twos complement
number.
0x02 TEM1, 0x03 TEM0
MSB1 LSB
D9 D8 D7 D6 D5 D4 D3 D2
D1 D0 X X X X X X
1 X = don’t care.
Register Update Rate: f0/32 (~485 Hz)
Scale Factor: 5 LSBs/°C
The TEMx registers contain a value corresponding to the tem-
perature of the device. The data is presented as a 10-bit, twos
complement number. 0 LSBs corresponds to a temperature of
approximately 4C.
Table 15.
Temperature Value of TEM1:TEM01
45°C 0000 0000 00XX XXXX
85°C 0011 0010 00XX XXXX
0°C 1100 0111 11XX XXXX
1 X = don’t care.
0x04 LOCST1, 0x05 LOCST0
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Register Update Rate: f0/16 (~970 Hz)
Scale Factor: 80 LSBs/°/sec
The LOCSTx memory registers contain the value of the temper-
ature compensated and low pass filtered continuous self-test
delta. This value is a measure of the difference between the pos-
itive and negative self-test deflections and corresponds to the
values presented in the Specifications table. The device issues a
CST error when the value of the self-test exceeds the established
self-test limits. The self-test data is filtered to f0/8000 (~1.95 Hz)
to prevent false triggering of the CST fault bit. The data is
presented as a 16-bit, twos complement number, with a scale
factor of 80 LSBs/°/sec.
0x06 HICST1, 0x07 HICST0
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7
D6
D5
D4
D3
D2
D1
D0
Register Update Rate: f0/16 (~970 Hz)
Scale Factor: 80 LSBs/°/sec
The HICSTx registers contain the unfiltered self-test information.
The HICSTx data can be used to supplement fault diagnosis in
safety critical applications as sudden shifts in the self-test response
are detected. However, the CST bit of the fault register is not set
when the HICSTx data is observed to exceed the self-test limits.
Only the LOCSTx memory register, which is designed to filter
noise and the effects of sudden, temporary self-test spiking due
to external disturbances, controls the assertion of the CST fault
bit. The data is presented as a 16-bit, twos complement number.
0x08 QUAD1, 0x09 QUAD0
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Register Update Rate: f0/64 (~240 Hz)
Scale Factor: 80 LSBs/°/sec equivalent
The QUADx memory registers contain a value corresponding
to the amount of quadrature error present in the device at a
given time. Quadrature can be likened to a measurement of the
error of the motion of the resonator structure and can be caused
by stresses and aging effects. The quadrature data is filtered to
f0/200 (~77.5Hz) and can be read frequently to detect sudden
shifts in the level of quadrature. The data is presented as a
16-bit, twos complement number.
Data Sheet ADXRS810
Rev. 0 | Page 23 of 28
0x0A FAULT1, 0x0B FAULT0
MSB1 LSB
X X X X FAIL AMP OV UV
PLL Q NVM POR PWR CST CHK 0
1 X = don’t care.
Register Update Rate: N/A
Scale Factor: N/A
The FAULTx registers contain the state of the error flags in the
device. The FAULT0 register is appended to the end of every
device data transmission (see Table 12); however, this register
can also be accessed independently through its memory
location. The individual fault bits are updated asynchronously,
requiring <5 µs to activate, once the fault condition exists on-
chip. Once toggled, each fault bit remains active until the fault
register is read or a sensor data command is received. If the
fault is still active after the bit is read, the fault bit immediately
reasserts itself.
0X0C PID1, 0X0D PID0
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Register Update Rate: N/A
Scale Factor: N/A
The PIDx (part ID) registers contain a 16-bit number identifying
the version of the ADXRS810. Combined with the serial
number, this information allows for a higher degree of device
individualization and tracking. The initial product ID is 0x5201.
0x52 can be interpreted as the ASCII value for the R character,
with 0x01 signifying the first revision. Subsequent versions of
silicon can increment this value to R02 (0x5202), R03 (0x5203),
and so on.
0x0E SN3, 0x0F SN2, 0x10 SN1, 0x11 SN0
MSB LSB
D31 D30 D29 D28 D27 D26 D25 D24
D23 D22 D21 D20 D19 D18 D17 D16
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Register Update Rate: N/A
Scale Factor: N/A
The SNx (serial number) registers contain a 32-bit identification
number that uniquely identifies the device. To read the entire
serial number, two memory read requests must be initiated. The
first read request to Address 0x0E returns the upper 16 bits of
the serial number, and the second read request to Address 0x10
returns the lower 16 bits of the serial number.
ADXRS810 Data Sheet
Rev. 0 | Page 24 of 28
SUGGESTED PCB LAYOUT
Figure 22 and Figure 23 show a suggested board layout for the
SOIC package, and Figure 24 shows a sample solder pad layout.
The board layout is intended for a 2-layer PCB design. While
this exact layout need not be followed, the user should adhere
to the following guidelines:
Locate C1, C2, and C3 as close as possible to their
respective package pin.
Connect all Analog Devices reserved pins to GND through
a trace and not directly through the pad itself.
Keep the trace from the VX package pin to L1/D1 as short
as possible. It is acceptable to locate either L1 or D1 on the
back side of the PCB to shorten this trace.
Figure 22 and Figure 23 show the use of a top-layer metal
GND plane for all GND connections. The use of a power
plane is not recommended.
For the SOIC package, it is not recommended to route
the SPI interface traces under the device without proper
shielding, such as a filled ground plane (used in Figure 22
and Figure 23).
The PDD trace is widened compared to other signal traces
for improved noise performance.
Note that the L1 and D1 footprints change according to the
user’s selection of inductor and diode component.
11034-049
Figure 22. SOIC PCB Layout Top Layer Metal
11034-051
Figure 23. SOIC PCB Layout Bottom Layer Metal
(Silkscreen Is shown as a Reference Only and Is Not Present on the Back
Side of the PCB.)
9.462
11.232
1.270
0.572
1.691
11034-037
Figure 24. Sample SOIC Solder Pad Layout (Land Pattern);
Dimensions Shown in Millimeters
Data Sheet ADXRS810
Rev. 0 | Page 25 of 28
SOLDER PROFILE
SUPPLIER T
P
T
C
SUPPLIER
t
P
USER T
P
T
C
USER
t
P
T
C
T
P
T
L
25
T
C
– 5°C
t
S
T
SMIN
T
SMAX
PREHEAT AREA
MAXIMUM RAMP-UP RATE = 3°C/sec
MAXIMUM RAMP-DOWN RATE = 6°C/sec
TIME 25°C TO PEAK
t
P
T
C
– 5°C
t
L
TEMPERATURE
TIME
11034-040
Figure 25. Recommended Soldering Profile
Table 16. Soldering Profile Characteristics
Profile Feature
Conditions
Sn63/Pb37 Pb-Free
Average Ramp Rate (TL to TP) 3°C/sec maximum
Preheat
Minimum Temperature (TSMIN) 100°C 150°C
Maximum Temperature (TSMAX) 150°C 200°C
Time (TSMIN to TSMAX) (tS) 60 sec to 120 sec 60 sec to 120 sec
TSMAX to TL
Ramp-Up Rate 3°C/sec maximum
Time Maintained Above Liquidous (TL)
Liquidous Temperature (TL) 183°C 217°C
Time (tL) 60 sec to 150 sec 60 sec to 150 sec
Classification Temperature (TC)1 220°C 250°C
Peak Temperature (TP) TC + 0°C/−5°C TC + 0°C/−5°C
Time Within 5°C of Actual Peak Temperature (tP) 10 sec to 30 sec 20 sec to 40 sec
Ramp-Down Rate 6°C/sec maximum
Time from 25°C to Peak Temperature 6 minutes maximum 8 minutes maximum
1 Based on IPC/JEDEC J-STD-020D.1 for SnPb and Pb-free processes. Package volume < 350 mm3, and package thickness > 2.5 mm.
ADXRS810 Data Sheet
Rev. 0 | Page 26 of 28
PACKAGE MARKING CODES
XRS810
BRG Z n
#YYWW
LLLLLLLLL
11034-041
Figure 26. Package Marking Codes for the 16-Lead SOIC
Table 17. Package Code Designations
Marking Significance
XRS Angular rate sensor
810 Series number
B Temperature grade (−40°C to +105°C)
RG Package designator (SOIC package)
Z RoHs compliant
n Revision number
# Pb-free designation
YYWW Assembly date code
LLLLLLLLL Assembly lot code (up to nine characters)
Data Sheet ADXRS810
Rev. 0 | Page 27 of 28
OUTLINE DIMENSIONS
072409-B
16
18
9
3.73
3.58
3.43
0.28
0.18
0.08 0.75
0.70
0.65
0.58
0.48
0.38
0.87
0.77
0.67
1.50
1.35
1.20
10.30 BSC
9.59 BSC
1.27 BSC
10.42
BSC
7.80
BSC 0.25 GAGE
PLANE
DETAIL A
DETAIL A
C
OPLANARITY
0.10
0.50
0.45
0.40
PIN 1
INDICATOR
Figure 27. 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV]
(RG-16-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2 Temperature Range Package Description Package Option
ADXRS810WBRGZ-RL –40°C to +105°C 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV] RG-16-1
1 Z = RoHS Compliant Part.
2 W = Qualified for Automotive Applications.
AUTOMOTIVE PRODUCTS
The ADXRS810 model is available with controlled manufacturing to support the quality and reliability requirements of automotive
applications. Note that this automotive model may have specifications that differ from the commercial models; therefore, designers
should review the Specifications section of this data sheet carefully. Only the automotive grade product shown is available for use in
automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to
obtain the specific Automotive Reliability reports for this model.
ADXRS810 Data Sheet
Rev. 0 | Page 28 of 28
NOTES
©2012 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11034-0-10/12(0)