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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
www.fairchildsemi.com
1
December 2014
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FCPF190N65FL1 Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage - DC ±20 V
- AC (f > 1 Hz) ±30
IDDrain Current - Continuous (TC = 25oC) 20.6 A
- Continuous (TC = 100oC) 13.1
IDM Drain Current - Pulsed (Note 1) 61.8 A
EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ
IAR Avalanche Current (Note 1) 4 A
EAR Repetitive Avalanche Energy (Note 1) 0.39 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 50
PDPower Dissipation (TC = 25oC) 39 W
- Derate Above 25oC0.31W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCPF190N65FL1 Unit
RθJC Thermal Resistance, Junction to Case, Max. 3.2 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
FCPF190N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
Features
•700 V @T
J = 150°C
•R
DS(on) = 168 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 60 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
• 100% Avalanche Tested
•RoHS Compliant
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications. SuperFET II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
component and improve system reliability.
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter • AC - DC Power Supply
G
S
D
TO-220F
GDS
www.fairchildsemi.com
2
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCPF190N65FL1 FCPF190N65F TO-220F Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - V
VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25oC - 0.72 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 μA
VDS = 520 V, VGS = 0 V,TC = 125oC- 60 -
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 μA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 168 190 mΩ
gFS Forward Transconductance VDS = 20 V, ID = 10 A -18-S
Ciss Input Capacitance VDS = 100 V, VGS = 0 V,
f = 1 MHz
- 2350 3055 pF
Coss Output Capacitance - 77 100 pF
Crss Reverse Transfer Capacitance - 0.68 - pF
Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 44 - pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 304 - pF
Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A,
VGS = 10 V
(Note 4)
-6078nC
Qgs Gate to Source Gate Charge - 12 - nC
Qgd Gate to Drain “Miller” Charge - 25 - nC
ESR Equivalent Series Resistance f = 1 MHz - 0.6 - Ω
td(on) Turn-On Delay Time
VDD = 380 V, ID = 10 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
-2560ns
trTurn-On Rise Time - 11 32 ns
td(off) Turn-Off Delay Time - 62 134 ns
tfTurn-Off Fall Time - 4.2 18 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 20.6 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
- 105 - ns
Qrr Reverse Recovery Charge - 515 - nC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.
www.fairchildsemi.com
3
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.3 1 10 15
1
10
100
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
345678
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 1428425670
0.0
0.1
0.2
0.3
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.00.51.01.52.0
0.1
1
10
100
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
50000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 1326395265
0
2
4
6
8
10
*Note: ID = 10A
VDS = 130V
VDS = 325V
VDS = 520V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
4
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
-75 -50 -25 0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 10A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0.1 1 10 100 1000
0.01
0.1
1
10
100
200
10μs
100μs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
0 132 264 396 528 660
0
2.6
5.2
7.8
10.4
13.0
EOSS, [μJ]
VDS, Drain to Source Voltage [V]
-75 -50 -25 0 25 50 75 10 0 125 150
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ
, Junction Temperature [oC]
www.fairchildsemi.com5
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 110
1E-3
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 3.2oC/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
www.fairchildsemi.com
6
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
Figure 13. Gate Charge Test Circuit & Waveform
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
www.fairchildsemi.com
7
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.fairchildsemi.com
8
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
Mechanical Dimensions
Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Takcheong
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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9
©2014 Fairchild Semiconductor Corporation
FCPF190N65FL1 Rev. C1
FCPF190N65FL1 — N-Channel SuperFET® II FRFET® MOSFET
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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instructions for use provided in the labeling, can be reasonably
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the failure of the life support device or system, or to affect its safety or
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Definition of Terms
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may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
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Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
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Gmax™
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Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
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MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
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Programmable Active Droop™
QFET®
QS™
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RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
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SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
™
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Rev. I73
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
tm
®
4.60
4.30
10.70
10.30
3.00
2.60
3.40
3.00
10.30
9.80
0.90
0.50
(3X)
2.74
2.34
(2X)
2.14
3.30
2.70
B
1.20
1.00
1.20
0.90
(2X)
B
19.00
17.70
13
0.50
M
A
A
2.90
2.50
B
15.70
15.00
2.70
2.30
B
0.60
0.40
6.60
6.20
1 X
45°
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
F. DRAWING FILE NAME: TO220V03REV1
G. FAIRCHILD SEMICONDUCTOR
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