FGH40N60SMD 600 V, 40 A Field Stop IGBT Features General Description * Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for Easy Parallel Operating * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A * High Input Impedance * Fast Switching: EOFF = 6.5 uJ/A * Tighten Parameter Distribution * RoHS Compliant Applications * Solar Inverter, UPS, Welder, PFC, Telecom, ESS C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V Transient Gate to Emitter Voltage IC ICM (1) IF IFM (1) PD 30 V 80 A Collector Current @ TC = 25oC Collector Current @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC 20 A 120 A Maximum Power Dissipation @ TC = 25oC 349 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current 174 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 1 www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT October 2014 Symbol RJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. Unit - 0.43 o C/W C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.5 o RJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH40N60SMD FGH40N60SMD TO-247 Tube N/A N/A 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 A - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA 3.5 4.5 6.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE IC = 40 A, VGE = 15 V - 1.9 2.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 175oC - 2.1 - V - 1880 - pF - 180 - pF - 50 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 12 16 ns tr Rise Time - 20 28 ns td(off) Turn-Off Delay Time - 92 120 ns tf Fall Time - 13 17 ns Eon Turn-On Switching Loss - 0.87 1.30 mJ Eoff Turn-Off Switching Loss - 0.26 0.34 mJ VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.13 1.64 mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 0.97 - mJ Eoff Turn-Off Switching Loss - 0.60 - mJ Ets Total Switching Loss - 1.57 - mJ (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol (Continued) Parameter Min. Typ. Max Unit - 119 180 nC - 13 20 nC - 58 90 nC Min. Typ. Max Unit TC = 25C unless otherwise noted Test Conditions - 2.3 2.8 TC = 175oC - 1.67 - Reverse Recovery Energy TC = 175oC - 48.9 - trr Diode Reverse Recovery Time TC = 25oC - 36 - TC = 175oC - 110 - Qrr Diode Reverse Recovery Charge TC = 25oC - 46.8 - - 445 - VFM Diode Forward Voltage Erec (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 TC = 25oC IF = 20 A IF =20 A, dIF/dt = 200 A/s TC = 3 175oC V uJ ns nC www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 o TC = 25 C 20V 15V 120 12V 10V Collector Current, IC [A] 60 VGE = 8V 20 60 2 4 Collector-Emitter Voltage, VCE [V] 0 6 Figure 3. Typical Saturation Voltage Characteristics 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 120 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 100 Collector Current, IC [A] VGE = 8V 40 20 0 o TC = 25 C o TC = 175 C 80 60 40 20 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 5. Saturation Voltage vs. VGE Common Emitter VGE = 15V 80A 2.5 2.0 40A 1.5 IC = 20A 1.0 25 0 50 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 6. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o TC = -40 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 10V 80 0 16 12 8 40A 80A 4 IC = 20A 0 12V 100 80 40 20V 15V o TC = 175 C 100 Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = 175 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 4 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 40 80 Gate Charge, Qg [nC] Figure 10. Turn-off Characteristics vs. Gate Resistance 100 1000 td(off) Switching Time [ns] Switching Time [ns] tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o TC = 25 C o TC = 25 C o TC = 175 C 1 120 0 10 20 30 40 Gate Resistance, RG [] o TC = 175 C 1 50 0 10 20 30 40 50 Gate Resistance, RG [] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current 1000 5 Common Emitter VGE = 15V, RG = 6 o Switching Time [ns] Switching Loss [mJ] TC = 25 C Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o 100 TC = 175 C tr 10 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 Gate Resistance, RG [] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 1000 6 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C o o TC = 175 C 1 20 30 40 50 60 TC = 175 C 70 0.1 20 80 30 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency 50 60 70 80 Figure 16. SOA Characteristics 300 250 Square Wave 200 10s 100 o TJ <= 175 C, D = 0.5, VCE = 400V 100s VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] 40 Collector Current, IC [A] 150 o TC = 75 C 100 o TC = 100 C 50 1ms 10 ms 10 DC 1 *Notes: 0.1 o 1. TC = 25 C o 0 1k 0.01 10k 100k Switching Frequency, f[Hz] 1 1M Figure 17. Forward Characteristics 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 18. Reverse Recovery Current 12 100 o Reverse Recovery Currnet, Irr [A] Forward Current, IF [A] 2. TJ = 175 C 3. Single Pulse o TC = 175 C 10 o TC = 25 C o TC = 25 C TC = 25 C o 10 TC = 175 C diF/dt = 200A/s 8 6 diF/dt = 100A/s 4 diF/dt = 200A/s 2 diF/dt = 100A/s o TC = 175 C 0 1 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 2.5 3.0 6 0 10 20 30 Forward Current, IF [A] 40 www.fairchildsemi.com Figure 19. Reverse Recovery Time Figure 20. Stored Charge 700 200 o o Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C o TC = 175 C 150 100 diF/dt = 100A/s diF/dt = 200A/s 50 5 10 15 20 25 30 35 Forward Current, IF [A] 40 o TC = 175 C 500 400 300 diF/dt = 100A/s diF/dt = 200A/s 200 100 0 0 TC = 25 C 600 0 45 0 5 10 15 20 25 30 35 Forwad Current, IF [A] 40 45 Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 -5 10 -4 10 -3 -2 10 -1 10 10 0 10 Rectangular Pulse Duration [sec] Figure 22. Time Transient Thermal Impedance of Diode Thermal Response [Zthjc] 3 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 t2 0.01 single pulse 0.01 -5 10 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C3 7 www.fairchildsemi.com FGH40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics