©2010 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH40N60SMD Rev. C3
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
October 2014
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Symbol Description Ratings Unit
V
CES
Collector to Emitter Voltage 600 V
V
GES
Gate to Emitter Voltage ± 20 V
Transient Gate to Emitter Voltage ± 30 V
I
C
Collector Current @ T
C
= 25
o
C 80 A
Collector Current @ T
C
= 100
o
C 40 A
I
CM (1)
Pulsed Collector Current @ T
C
= 25
o
C 120 A
I
F
Diode Forward Current @ T
C
= 25
o
C 40 A
Diode Forward Current @ T
C
= 100
o
C 20 A
I
FM (1)
Pulsed Diode Maximum Forward Current 120 A
P
D
Maximum Power Dissipation @ T
C
= 25
o
C 349 W
Maximum Power Dissipation @ T
C
= 100
o
C 174 W
T
J
Operating Junction Temperature -55 to +175
o
C
T
stg
Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300
o
C
G
E
C
E
C
G
COLLECTOR
(FLANGE)
FGH40N60SMD
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : T
J
= 175
o
C
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.9 V(Typ.) @ I
C
= 40 A
• High Input Impedance
• Fast Switching: E
OFF
= 6.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2
nd
generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FGH40N60SMD Rev. C3
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Symbol Parameter Typ. Max. Unit
R
θJC
(IGBT) Thermal Resistance, Junction to Case - 0.43
o
C/W
R
θJC
(Diode) Thermal Resistance, Junction to Case - 1.5
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient - 40
o
C/W
Part Number Top Mark Package Packing
Method Reel Size Tape Width Quantity
FGH40N60SMD FGH40N60SMD TO-247 Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 250 µA 600 - - V
∆BV
CES
∆T
J
Temperature Coefficient of Breakdown
Voltage V
GE
= 0 V, I
C
= 250 µA- 0.6 - V/
o
C
I
CES
Collector Cut-Off Current V
CE
= V
CES
, V
GE
= 0 V - - 250 µA
I
GES
G-E Leakage Current V
GE
= V
GES
, V
CE
= 0 V - - ± 400 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
= 250 µA, V
CE
= V
GE
3.5 4.5 6.0 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 40 A
,
V
GE
= 15 V
- 1.9 2.5 V
I
C
= 40 A
,
V
GE
= 15 V,
T
C
= 175
o
C- 2.1 - V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz
- 1880 - pF
C
oes
Output Capacitance - 180 - pF
C
res
Reverse Transfer Capacitance - 50 - pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6 Ω, V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
- 12 16 ns
t
r
Rise Time - 20 28 ns
t
d(off)
Turn-Off Delay Time - 92 120 ns
t
f
Fall Time - 13 17 ns
E
on
Turn-On Switching Loss - 0.87 1.30 mJ
E
off
Turn-Off Switching Loss - 0.26 0.34 mJ
E
ts
Total Switching Loss - 1.13 1.64 mJ
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6 Ω, V
GE
= 15 V,
Inductive Load, T
C
= 175
o
C
- 15 - ns
t
r
Rise Time - 22 - ns
t
d(off)
Turn-Off Delay Time - 116 - ns
t
f
Fall Time - 16 - ns
E
on
Turn-On Switching Loss - 0.97 - mJ
E
off
Turn-Off Switching Loss - 0.60 - mJ
E
ts
Total Switching Loss - 1.57 - mJ
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
3
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FGH40N60SMD Rev. C3
Electrical Characteristics of the IGBT
(Continued)
Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
Q
g
Total Gate Charge
V
CE
= 400 V, I
C
= 40 A,
V
GE
= 15 V
- 119 180 nC
Q
ge
Gate to Emitter Charge - 13 20 nC
Q
gc
Gate to Collector Charge - 58 90 nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
V
FM
Diode Forward Voltage I
F
= 20 A T
C
= 25
o
C - 2.3 2.8 V
T
C
= 175
o
C - 1.67 -
E
rec
Reverse Recovery Energy
I
F
=20 A, dI
F
/dt = 200 A/µs
T
C
= 175
o
C - 48.9 - uJ
t
rr
Diode Reverse Recovery Time T
C
= 25
o
C - 36 - ns
T
C
= 175
o
C - 110 -
Q
rr
Diode Reverse Recovery Charge T
C
= 25
o
C - 46.8 - nC
T
C
= 175
o
C - 445 -
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
4
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FGH40N60SMD Rev. C3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0246
0
20
40
60
80
100
120
VGE = 8V
20V
T
C
= 25
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0246
0
20
40
60
80
100
120
V
GE
= 8V
20V
T
C
= 175
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 1 2 3 4
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
80A
40A
I
C
= 20A
Common Emitter
V
GE
= 15V
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
o
C]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A 80A
Common Emitter
T
C
= -40
o
C
Collector-Emitter Voltage
,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
80A
I
C
= 20A
40A
Common Emitter
T
C
= 175
o
C
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
5
www.fairchildsemi.com
FGH40N60SMD Rev. C3
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
0.1 1 10
0
1000
2000
3000
4000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
30
0 40 80 120
0
3
6
9
12
15
400V
Common Emitter
T
C
= 25
o
C
300V
VCC = 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
0 10 20 30 40 50
1
10
100
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
0 10 20 30 40 50
1
10
100
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
0 10 20 30 40 50
0.1
1
5
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 6
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
6
www.fairchildsemi.com
FGH40N60SMD Rev. C3
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 6
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
20 30 40 50 60 70 80
0.1
1
6
Common Emitter
V
GE
= 15V, R
G
= 6
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
1 10 100 1000
0.01
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
10
µ
µµ
µ
s
100
µ
µµ
µ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, V
CE
[V]
1k 10k 100k 1M
0
50
100
150
200
250
T
C
= 75
o
C
T
C
= 100
o
C
Square Wave
T
J
<= 175
o
C, D = 0.5,
V
CE
= 400V
V
GE
= 15/0V, R
G
= 6
Ω
ΩΩ
Ω
Collector Current, [A]
Switching Frequency, f[Hz]
0 0.5 1.0 1.5 2.0 2.5 3.0
1
10
100
T
C
= 25
o
C
T
C
= 175
o
C
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
T
C
= 25
o
C
T
C
= 175
o
C
0 10 20 30 40
0
2
4
6
8
10
12
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 100A/µ
µµ
µs
di
F
/dt = 200A/µ
µµ
µs
di
F
/dt = 100A/µ
µµ
µs
di
F
/dt = 200A/µ
µµ
µs
Reverse Recovery Currnet, I
rr
[A]
Forward Current, I
F
[A]
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
©2010 Fairchild Semiconductor Corporation
7
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FGH40N60SMD Rev. C3
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Time Transient Thermal Impedance of Diode
0 5 10 15 20 25 30 35 40 45
0
100
200
300
400
500
600
700
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 200A/
µ
µµ
µ
sdi
F
/dt = 100A/
µ
µµ
µ
s
Stored Recovery Charge, Q
rr
[nC]
Forwad Current, I
F
[A]
0 5 10 15 20 25 30 35 40 45
0
50
100
150
200
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 200A/
µ
µµ
µ
s
di
F
/dt = 100A/
µ
µµ
µ
s
Reverse Recovery Time, t
rr
[ns]
Forward Current, I
F
[A]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
3
0.05
0.01
0.02
0.1
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
