053-7075 Rev - 10-2002
MS1409
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1409 is a NPN silicon transistor designed for high
power gain VHF and UHF communication applications.
Gold metalization and diffused emitter ballast resistors
provide superior long term reliability.
ABSOLUTE MAXIMUM RATINGS (T
ABSOLUTE MAXIMUM RATINGS (TABSOLUTE MAXIMUM RATINGS (T
ABSOLUTE MAXIMUM RATINGS (TCASE
CASECASE
CASE = 25
= 25 = 25
= 25°
°°
°C)
C)C)
C)
S
y
mbol Paramete
r
V
alue Unit
VCBO Collector-base Voltage 65 V
VCEO Collector-emitter Voltage 40 V
VEBO Emitter-base Voltage 4.0 V
PDISS Total Power Dissipation 7.0 W
IC Collector Peak Current 1.0 A
TJ Junction Temperature 200 ºC
TSTG Storage Temperature -65 to 200 ºC
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-CASE) Thermal Resistance Junction-case 25 °
°°
°C/W
1. Emitter
2. Base
3. Collector
TO-39
Features
FeaturesFeatures
Features
• 175 MHz
• 28 VOLTS
• POUT = 2.5 W
• GP = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTOR
VHF COMMUNICATIONS
053-7075 Rev - 10-2002
MS1409
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVebo IE = 0.10 mA IC = 0 mA 4.0 --- --- V
BVcbo IC = 0.3 mA IE = 0 mA 65 --- --- V
BVceo IC = 3 mA I
S = 0 mA 40 --- --- V
Iceo VCE = 30 V --- --- 0.1 mA
HFE V
CE = 5 V IC = 100 mA 20 --- 200 B
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f =175 MHz PIN = 0.25W VCC = 28V 2.5 --- --- W
η
ηη
ηC f =175 MHz PIN = 0.25W VCC = 28V 50 --- --- %
GP f =175 MHz PIN = 0.25W VCC = 28V 10 --- --- dB
COB f =1.0MHz VCB= 30V --- --- 10 pf
053-7075 Rev - 10-2002
MS1409
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
