Silicon Controlled Rectifier Flat Pack Design Up to G00 Volts 4 Amperes (RMS) Model C106 PRODUCT FEATURES 4 The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding features: LOW COST SENSITIVE Operates directly from low signal sensors such as thermistors, photo-conductive cells, ete. VERSATILE Designed for a variety of mount-down methodsprinted circuit, plug-in socket, screws, or point-to-point soldering RUGGED, COMPACT Uses a solid plastic encapsulant in rectangular shape for high density packaging TYPICAL APPLICATIONS MOTOR CONTROL Electric Model Trains Sewing Machines Movie Projectors Food Mixers Electric Fans Slot Racing Cars C106 TYPE 1 REMOTE CONTROL C106 TYPE 4 C106 TYPE 2 1 C106 TYPE 3 (FULL SIZE) Armchair TV Control Master Switching Stations for Home Garage Door Openers Power Switch D 5 LIGHT Flame Detectors DRYNESS Clothes Dryness Sensor Moving-Light Signs (Chasers) Driver for Computer Readout PROXIMITY Burglar Alarm Lights Touch Switch Harbor Buoy Flashers Electric Door Openers Automotive Warning Systems Nixie & Neon Drivers COlNTING Low Speed Ring Counters TEMPERATURE Range Surface Unit (Hybrid) Shift Registers Chemical Processing (Photographic, etc.) SWITCHING Relay Replacement Food Warmer Tray Solenoid Drivers Bearing Temperature Sensor Latching Relay Replacement Electric Blanket Control power Flip Ps ow Power Inverters PRESSURE Auto Oil Pressure Gage Hot Water Boiler Safety Monitor Thyratron Tube Replacement AMPLIFIERS Gate Amplifier for Larger SCRs, Triacs TIME Photo Darkroom Exposure Blenders Oven Timer Hand Tools Vending Machine Logic Industrial Process Control IGNITION Small Gas Engines LIQUID LEVEL Basement Sump Pump Gas Appliances Automatic Coffee Maker Automatic Shutoff for Vending DETECTION Voltage (Battery Charger) Machines 720 Current (Crowbar }MAXIMUM ALLOWABLE RATINGS a | C106 _ Repetitive Peak Forward Blocking Working and Repetitive Type Voltage, VExmM Peak Reverse Voltage, RGK = 1000 Ohms Vrom(wkg) and Vaom(rep) Ty = -40C to +110C Ty = -40C to +110C C106Q1, C106Q2, C106Q3, C106Q4 15 Volts 15 Volts C106Y1, C106Y2, C106Y3, CLO6Y4 30 Volts 30 Volts C106F1, C106F2, C106F3, C106F4 50 Volts 50 Volts C106A1, C106A2, C106A3, C106A4 100 Voits 100 Volts C106B1, C106B2, C106B3, C106B4 200 Volts 200 Volts C106C1, C106C2, C106C3, C106C4 300 Volts 300 Volts C106D1, C106D2, C106D3, C106D4 400 Volts 400 Volts C106E1, C106E2, C106E3, C106E4 500 Voits 500 Volts C106M1, C106M2, C106M3, C106M4 600 Volts 600 Volts RMS Forward Current, On-State 4 Amperes Rate of Rise of Forward Current (non-repetitive), di/dt (See Chart 9) _________________. 50 Amperes/Microsecond Peak Forward Current, On-State (repetitive) 75 Amperes* Peak One Cycle Surge Forward Current, Non-Repetitive, Irm (surge) 20 Amperes It (for fusing) 0.5 Ampere? seconds (for times > 1.5 Milliseconds Peak Gate Power, Pom 0.5 Watt Average Gate Power, Pacav) 0.1 Watt Peak Gate Current, Icrm 0.2 Amperes Peak Reverse Gate Voltage, Vcrm 6 Volts Storage Temperature, Tstg 40C to +150C Operating Temperature 40C to +110C *This rating applies for operation at 60 Hz, 75C maximum tab (or anode) lead temperature, switching from 80 volts peak, sinusoida] current pulse width 10 wsec, minimum, 15 ysec. maximum. 0 Ol TEMPERATURE = 25C JUNCTION TEMPERATU =110%C INSTANTANEOUS FORWARD CURRENT-AMPERES 0.0 ~ INCREASES TO FORWARD ~. BREAKOVER VOLTAGE oO 10 2.0 3.0 4.0 INSTANTANEOUS ON-VOLTAGE-VOLTS 1. Maximum Forward Characteristics, On State 7219 10 p> 10 8 9 6 NOTES: (1) JUNCTION TEMPERATURE = 110 C ga 8 (2) RESISTIVE OR INDUCTIVE LOAD, 3 CURRENT AT-40C o 50 TO 400 Hz. 32 e = a 7 whe 1 x 8 gos MAXIMUM GATE 1 6} @OGl CURRENT AT + 25C z at Soa 2 6 DC ON-STATE 3 & a CURRENT 3 a U 2 po? ono oeR 25 2 oe HALF SINE WAVE 3 ost 3" Cwaximom Gare VOLTAGE & ON-STATE CURRENT x 06 AT +25C 54 $ 04 - = NOTE: APPLIES FOR RECTANGULAR TRIGGER PULSES 2 w 92 Eos 4 z oe O41 02 0406, 1 2 4 6 810 20 40 6100 200 400 609, 1900 w 2 GATE PULSE WIOTH MICROSECONOS 2 3. Maximum Gate Trigger Current = , and Voltage Variation with Trigger Pulse Width 9 04 =o t2 16 20 24 28 3200368 40 AVERAGE OR DC ON-STATE CURRENT - AMPERES 2. Maximum On-State Power Dissipation CHARACTERISTICS Test Symbol Min. Typ. Max. Units Test Conditions Reverse or Forward IRAM - 0.1 10 MA Varo = Vorn = Rated Value. Blocking Current or Ty, = 25C, Rex = 1000 Ohms (All Types) lornm - 10 100 UA Varam= Vorm = Rated Value. T= 110C, Rex = 1000 Ohms. DC Gate Trigger Igt - 30 200 MAdc Ty = 25C, Vp = 6 Vde, Ry = 100 Ohms Current Rox = 1000 Ohms - 75 500 MAdc TL =-40C, Vp = 6 Vde, Ry = 100 Ohms Rox = 1000 Ohms DC Gate Trigger Ver 0.4 0.5 0.8 Volts TL = 25C, Vp = 6 Vde, RL = 100 Ohms Voltage DC Rex = 1000 Ohms 0.5 0.7 1.0 Volts TL = -40C, Vp = 6 Vde, Ry = 100 Ohms DC Rok = 1000 Ohms 0.2 ~ ~ Volts TL = 110C, Vp = Rated Vorm Value DC Ry, = 3000 Ohms, Rex = 1000 Ohms Peak On-Voltage Vom - 1.8 2.2 Volts Ty = 25C, Inq = 4 Amperes Peak, Single Half Sine Wave Pulse, 2 Miblisec. Wide Holding Current ly 0.3 1.0 3.0 mAdc TL = 259C, Vp = 12 Vde, Rex = 1000 Ohms 0.4 2.0 6.0 mAdc T= -40C, VQ = 12 Vdc, Reg = 1000 Ohms 0.14 0.6 2.0 mAdc T_= 110C, Vp = 12 Vde, Re = 1000 Ohms Latching Current IL 0.3 1.5 4.0 mAdc TL = 25C, Vp = 12 Vde, Rex = 1000 Ohms 0.4 3.0 8.0 mAdc Ty =-40C, Vg = 12 Vdc, Rex = 1000 Ohms Critical Rate of dv/dt - 8 - Volts/ Ti =110C, Vp = Rated Vprm Value Rise of Forward Micro- Rgx = 1000 Ohms Blocking Voltage second Turn On Time tgtt, _ 1.2 - Micro- T, = 259C, Rated Vor Value seconds i+ = 1 Ampere, Gate Pulse = 4 Volts, 300 Ohms, 5 Microseconds Wide. Circuit Commutated ta - 40 100 Micro- Ty = 110C, rectangular current waveform. Turn-Off Time seconds Rate of rise of current <10 amps/psec. Rate of reversal of current <5 amps/psec. I> =1 Amp (50 psec pulse). Repetition Rate = 60 pps. VppM = Rated. Ve = 15 Volts Minimum. Vo = Rated. Rate of Rise Reapplied Forward Blocking Voltage = 5 Volts/psec. Gate Bias = 0 Volts, 100 Ohms (during turn-off time interval). The lead temperature (T) is measured in the center of the tab, 1/16 inch from the body an Type L and Type 3 devices, and in the center of the anode lead, 1/16unch from the body on Type 2 and Type 4 devices, 722120 i20 NOTES: (1) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hr] . 1 a 0 (2) RATINGS DERIVED FOR 0.01 WATT AVERAGE no NOTES: (1) RESISTIVE OR INDUCTIVE LOAD | GATE POWER DISSIPATION. a {2] RATINGS DERIVED FOR 0.01 WATT o a (3) TEMPERATURES ARE MEASURED (/16" FROM tJ AVERAGE GATE POWER DISSIPATION. 5 100) \ BODY ON EITHER TAB OR ANODE LEAD i, 19 \ SN | (3) TEMPERATURES ARE MEASURED 1/16" AS INDICATED. Z (4) TAB VERTICAL IN FREE air. 2 90 | FROM 8007 ON EITHER TAB OR 5 NQ & s my ANODE LEAD AS (NDICATED. & = | (4) TAB VERTICAL IN FREE AIR. = 80 80 = : : \ LTT i tl -_ WN iP VA ToS TYPES 2 4 \ go Deitad bi ech iz AMBIENT TEMP} 5 50 7 Oo 160" 360" & 50 TYPES | AND 3 3 \ \ | SCR SCR z TYPES 2 AND 4 i TAB TEMP. | a b conoucTiING++- BLOCKING + 40} 1. > (SEE NOTE 3) = \ TYPES | AND 3 = \ tA] AMBIENT TEMP. PNY 3 2 30 eo | AMBIENT TEMA [ L ONE SUPPLY CYCLE 4 2 30 | . z \ (SEE NOTE 4) 7 = \ | | | [ a l TYPES | AND 3 a z 2 TAB TEMP. = 20 Nq TYPES 2 AND 4 TYPES | AND 3 | TYPE \[_[asess eae faa] iste here 2) VL Arse te ANoDE tno rer '0 \Osee note 3) i J 10 VW] (See NOTE 4) (SEE NOTE 3) i |} 04 os le 16 20 24 2.8 32 36 40 04 08 l2 16 20 24 28 32 36 40 AVERAGE ON-STATE CURRENT-AMPERES (HALF SINE WAVE) DC ON-STATE CURRENT - AMPERES . . 4. Maximum Allowable Temperatures 5. Maximum Allowable Temperatures for Half Sine Wave On-State Current for DC On-State Current 100 T 80 | | : 1000 60 { B00 . whee aoe >t | | 600 a 40 NOTES: (i) CURVES SHOWN ARE FOR VARIOUS 400 + spot ! 4 JUNCTION TEMPERATURES. JUNCTION TO AMBLENT (2) ANODE SUPPLY VOLTAGE 12 VOLTS. 200 NOTE: (1) TAB AND ANODE LEAD REFERENCE WUNCTION TO anoiewe a4 20 (3) CAUTION: STANDARD FORWARD BLOCKING |_| ra POINTS ARE [/16 INCH FROM DEVICE BODY. TYPES | 8 3 x COLTAGE RATING DOES NOT APPLY FOR oO (2) THERMAL IMPEDANCE FROM JUNCTION TO | GATE TO CATHODE RESISTANCES GREATER 5 100 AMBIENT FOR TYPES | AND 3 APPLY FOR t + | w 80 MOUNTING WITH THE TAB VERTICAL IN pe 0 MAXIMUM AT 40C Z 60 FREE AIR: FOR TYPE 2 AND 4 IN ANY a : 3 | 40 POSITION IN FREE AIR. a T j g 6 MAXIMUM AT 25%C }4 20 JUNCTION TO ANODE LEAD g NY T g = TYPES 284 2 . Z nal receives | = z JUNCTION TO_TABTYPES 183 | 2 IM NY 2 10 3 8 i NI PA < i T ~ wy 2 wl 2 woo4 - 3 MAXIMUM. AT WORC 2 _ = 2 bh 4 z 1 ZF oe i Bo. \ 06 MINIMUM AT - 40C ~ 0.001 0.002 0.004 001 002 004 Of O2 04 \ 2 4 10 20 40 100 PP oA TIME IN SECONDS o4 rm MINIMUM AT 25C ~ 7. Maximum Transient Thermal Impedance | NN, a | | > 100 200 400 600 8001000 2000 4000 6000 / 10000 GATE TO CATHODE RESISTANCE-OHMS 8000 0.2 ol $ 6. Maximum and Minimum Holding Current Variation with External Gate-to-Cathode Resistance @ So \ 40 7 20) NOTES: (1) DC TO 400 PRS. | (2) JUNCTION TEMPER- ATURE IMMEDIATELY PRIOR TO TURN-ON#40C io TO +110C. (3) SWITCHING FROM 8 RATED VOLTAGE. = a WA (4) GATE SUPPLY: 5 VOLT _| 7 OPEN CIRCUIT, 300 OHM, ISp SEC SQUARE WAVE 4a PULSE, RISE TIME =Otp ] SEC MAXIMUM. INSTANTANEOUS VALUE OF ANODE CURRENT 2- MUST NEVER EXCEED TURN-ON CURRENT oO! 2 4 6810 20 40 60 | LIMIT LINE SHOWN, CYCLES AT 60 CRS, Ol 0.2 04 O06 08 1 2 4 6 810 PEAK HALF SINE WAVE FORWARD CURRENT-AMPERES INSTANTANEOUS FORWARD ANODE CURRENT-AMPERES . ws TIME FROM START OF CURRENT FLOW- MICROSECONDS 8. Maximum Allowable Non-Repetitive Peak Surge Forward Current 9. Turn-On Current Limit 723C106 MOUNTING METHODS The C106, because of its unique package design, is capable of being mounted in a variety of methods; depending upon the heatsink requirements and the circuit packaging methods. The leads will bend easily, either perpendicular to the flat or to any angle, and may also be bent, if desired, immediately next to the plastic case. For sharp angle bends (90 or larger), a lead should be bent only once; since repeated bending will fatigue or break the lead. Bending in other directions may be performed as long as the lead is held firmly between the case and the bend, so that the strain on the lead is not transmitted to the plastic case. The mounting tab may also be bent or formed into any convenient shape so long as it is held firmly between the plastic case and the area to be formed or bent. Without this precaution, bending may fracture the plastic case and permanently damage the unit. As a service to its customers, the General Electric Company provides a lead and tab shaping capability. Any of the derived types shown in the following chart are available direct from the factory to original equipment manufacturers. DERIVED TYPES (The types shown below are derived from the basic types illustrated in the left-hand column.) PRINTED CIRCUIT BOARD MOUNTING RIVET OR SCREW MOUNTING TO FLAT SURFACE (Upright or Flat) O a ET oso b be. S32 REF, + 71 o * a6 (a i C106 Type 1 C106 Type 11 C106 Type 12 420 9 086 be 332 REF. 220 t | an" i 4 BASIC TYPES C106 Type 2 C106 Type 21 | 4 41 ay oso bs 463 REF C106 Type 3 C106 Type 32 420 -0"'580 C106 CONVERSIONS e193 REF. INCHES MILLIMETERS INCHES MATLLIMETERS -120 3.048 "080 2031 -332 REF. 8.433 REF. = -160 4.064 420 10.668 he -120 3.047 380 9.651 a b + 193 REF. 4.902 REF. -465 REF. 11.811 REF. C106 Type 4 C106 Type 41 724| C106 | SIMPLE TEST CIRCUIT FOR THE C106 SCR* Gate Trigger Voltage and Current Measurement RESET - NORMALLY CLOSED PUSHBUTTON 6 VOC Vi 0-10 volt DC meter Ver 0-1 volt DC meter Ics 0-1mA DC milliameter R1 1K potentiometer To measure gate trigger voltage and current, raise gate voltage (Vcr) until meter reading V, drops from 6 volts to 1 volt. Gate trigger voltage is the reading on Var just prior to V, dropping. Gate trigger current Ig; can be computed from the relationship: Ier = I Vor om ct = 8 ~ 7000 ps where Ics is reading (in amps) on meter just prior to V, dropping. NOTE: Icr may turn out to be a nega- tive quantity (trigger current flows out from gate lead). * For more sophisticated equipment suitable for testing the C106 SCR see GE Application Note 200. 19 Using Low Current SCRs. 725CIRCUIT DESIGN 1. Use of Gate Resistor The C106 SCR is guaranteed to block rated voltage over its rated operating temperature range only if a resistance of not more than 1000 ohms, or equivalent, ** is connected between its gate and cathode termi- nals as follows: o ANODE CATHODE ** For alternative acceptable gate biasing methods see Application Note 200.19 Using Low Current SCRs. 2. Suppression of Rate Effect In circuits where the C106 is subjected to fast rising anode voltages, as for instance where voltage is applied suddenly with a switch, RC slow down filters may be required to prevent the SCR from trigger- ing spontaneously. C should be selected in conjunction with Ry, so that dv/dt is less than 10 volts per micro- second thus: V DV <10V/ui S R_ (LOAD RESISTANCE) DT We __ |" 0 ra(R, XC) (The 10 ohm resistor limits turn on current through the SCR toa safe value when the SCR turns on.) OUTLINE DRAWINGS [Se comin | Conveanions NOTE. GATE LEAD IS ADJACENT TO CHAMFER. WWCHES MILLIMETE 1.400 _, 2. ANODE. me | wo 360 3. CATHODE. co 127 4. TABIS DIRECTLY CONNECTED TO CENTER ae [ime 260 az o1a. LEAD (ANODE) INTERNALLY | ae 135 7" 240 le 026 O76 ure 5 { 19 | ax | 2at SEE OS me TP f NOTE | Tt SEE TA I as an | tae 520 NOTE- t SEt Tas | aan 2385 .320 480 2 NOTE2 aus_| a0 "365 310 050 | 260 i" Bev 260 SG + rc 030} | 240 ar | jo 280 me | soe I rT za | tos | "m_ | ex08 be + + 050 _tt aaa | sas 285 | | T 1030 ae | Ha SEE | | | .070 X45REF | | + | WW Ww a | ame 420_NOTE- || le-see CHAMFER ae | ee 405 5 |! NOTE | Wit 950 || Ber || |i) 080 mr | rm SEE NOTE 2 030 297 0% au | 37m i05 3 | tan 105 105 be! | vaca] oes 105. | fe 095 095 190) J re .095 054 170 im | iene i Bae | a C106 TYPE! ClOG TYPE2 ClO6 TYPE 3 ClO6 TYPE 4 726