Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N6802
IRFF430
Document Number 5357
Issue: 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VGS Gate – Source Voltage
IDContinuous Drain Current (VGS = 10V , Tcase = 25°C)
IDContinuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current 1
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS Single Pulse Avalanche Energy 2
dv/dt Peak Diode Recovery 3
TJ, Tstg Operating and Storage Temperature Range
RθJC Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction-to-Ambient
±20V
2.5A
1.5A
11A
25W
0.2W/°C
0.35mJ
3.5V/ns
–55 to +150°C
5.0°C/W
175°C/W
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO39 – Package (TO-205AF)
Notes
1) Pulse Test: Pulse Width ≤300µs, δ≤2%
2) @ VDD = 50V , Peak IL= 2.5A , Starting TJ= 25°C
3) @ ISD ≤2.5A , di/dt ≤75A/µs , VDD ≤BVDSS , TJ≤150°C , SUGGESTED RG= 7.5Ω
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Source Pin 2 – Gate Pin 3 – Drain
BVDSS 500V
ID(cont) 2.5
RDS(on) 1.5ΩΩ
Underside View
2N6802
IRFF430
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5357
Issue: 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 1.5A
VGS = 10V ID= 2.5A
VDS = VGS ID= 250µA
VDS > 15V IDS = 1.5A
VGS = 0 VDS = 0.8BVDSS
TJ= 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 0.5BVDS
ID= 2.5A
ID=2.5A
VDS = 0.5BVDS
RG= 7.5Ω
IS= 2.5A VGS = 0
IF= 1.5A TJ= 25°C
IF= 2.5A TJ= 25°C
di/ dt≤100A/µsV
DD ≤50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
500
0.43
1.5
1.725
24
1.5 25
250
100
–100
610
135
65
19.8 29.5
2.2 4.6
5.5 19.7
30
30
55
30
2.5
11
1.4
900
7.0
Negligible
V
V/°C
Ω
V
S(Ω
µA
nA
pF
nC
ns
A
V
ns
µC
BVDSS
∆BVDSS
∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
STATIC ELECTRICAL RATINGS
Notes 1) Pulse Test: Pulse Width ≤300µs, δ≤2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
(Ω)
