www.irf.com 1
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.3 A
ID @ TA = 70°C -4.3
IDM Pulsed Drain Current À-43
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
lCo-packaged HEXFET® Power MOSFET
and Schottky Diode
lIdeal For Buck Regulator Applications
lP-Channel HEXFET
lLow VF Schottky Rectifier
lGeneration 5 Technology
lSO-8 Footprint
IRF7322D1
FETKYä MOSFET / Schottky Diode
Notes:
ÀRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
ÁISD -2.9A, di/dt -77A/µs, VDD V(BR)DSS, TJ 150°C
ÂPulse width 300µs; duty cycle 2%
ÃSurface mounted on FR-4 board, t 10sec.
Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
Description
VDSS = -20V
RDS(on) = 0.058
Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Top View
8
1
2
3
45
6
7
A
A
S
G
D
D
K
K
SO-8
10/18/04
PD- 91705B
IRF7322D1
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 V VGS = 0V, ID = -250µA
RDS(on) Static Drain-to-Source On-Resistance 0.049 0.062 VGS = -4.5V, ID = -2.9A
0.082 0.098 VGS = -2.7V, ID = -1.5A
VGS(th) Gate Threshold Voltage -0.70 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 5.9 S VDS = -10V, ID = -1.5A
IDSS Drain-to-Source Leakage Current -1.0 VDS = -16V, VGS = 0V
-25 VDS = -16V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage 100 VGS = -12.0V
Gate-to-Source Reverse Leakage -100 VGS = 12.0V
QgTotal Gate Charge 1 9 29 I D = -2.9A
Qgs Gate-to-Source Charge 4.0 6.1 nC V DS = -16V
Qgd Gate-to-Drain ("Miller") Charge 7 .7 12 VGS = -4.5V (see figure 6) Â
td(on) Turn-On Delay Time 15 22 VDD = -10V
trRise Time 40 60 ID = -2.9A
td(off) Turn-Off Delay Time 42 63 R G = 6.0
tfFall Time 49 73 RD = 3.4 Â
Ciss Input Capacitance 780 VGS = 0V
Coss Output Capacitance 470 pF VDS = -15V
Crss Reverse Transfer Capacitance 2 40 ƒ = 1.0MHz (see figure 5)
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current (Body Di o de ) -2.5 A
ISM Pulsed Source Current (Body Diode) -21
VSD Body Diode Forward Voltage -1.2 V TJ = 25°C, IS = -2.9A, VGS = 0V
trr Reverse Recovery Time (Body Diode) 47 71 ns TJ = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge 49 73 nC di/dt = 100A/µs Â
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units. Conditions
IF(av) Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
2 T A = 70°C
ISM Max. peak one cycle Non-repetitive 12 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
8 T
J = 125°C
CtMax. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR
Schottky Diode Electrical Specifications
V
mA
See Fig. 14
IRF7322D1
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10
20µs PU LSE WIDT H
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resi s tance
DS(on)
(Normalized)
A
I = -2.9A
V = -4.5V
D
GS
Power Mosfet Characteristics
IRF7322D1
4www.irf.com
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drai n Voltage (V)
-I , Reverse Drai n C ur rent (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitan c e (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7322D1
www.irf.com 5
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
RDS (on) , Drain-to-Source On Resistance ()
RDS (on) , Drain-to-Source On Resistance ()
Fig 10. Typical On-Resistance Vs. Drain
Current Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
0
.0
0
.2
0
.4
0
.6
0
.8
0 4 8 121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0
.03
0
.04
0
.05
0
.06
0
.07
0
.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to -S o u rce V o l tag e (V )
I = -5.3A
D
IRF7322D1
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 - Typical Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 4 8 12 16 20
R




 

)

J
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1
.0
FM
F
Instantaneous Forward C urrent - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0
F(AV)
A
Average Forwa rd Current - I (A)
Allowable Ambient Temperature - (°C
)
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
DC
V = 20V
R = 62.5°C/W
Square wave
r
thJA
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Forward Voltage Drop - VF (V)
IRF7322D1
www.irf.com 7
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIM ENSIO NS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXC EED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXC EED 0.15 [.006].
8X 1.78 [.07
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF7807D1 (FETKY)
XXXX
807D1
Y = LAST DIGIT OF THE YEAR
A = AS S EMBLY SIT E CODE
WW = WEEK
LOT CODE
PRODUCT ( OPTIONAL)
P = DISGNATES L EAD - FREE
DATE CODE (YWW)
PART NUMBER
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.05 0 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.02 5 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.2 5 [ . 010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [. 004]
4312
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
SO-8 (Fetky) Part Marking Information
IRF7322D1
8www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIME NSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINA L NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .3 18 )
7.9 ( .3 12 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EI A-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)