www.irf.com 1
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.3 A
ID @ TA = 70°C -4.3
IDM Pulsed Drain Current À-43
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
lCo-packaged HEXFET® Power MOSFET
and Schottky Diode
lIdeal For Buck Regulator Applications
lP-Channel HEXFET
lLow VF Schottky Rectifier
lGeneration 5 Technology
lSO-8 Footprint
IRF7322D1
FETKYä MOSFET / Schottky Diode
Notes:
ÀRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
ÁISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ÂPulse width ≤ 300µs; duty cycle ≤ 2%
ÃSurface mounted on FR-4 board, t ≤ 10sec.
Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
Description
VDSS = -20V
RDS(on) = 0.058Ω
Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Top View
8
1
2
3
45
6
7
A
A
S
G
D
D
K
K
SO-8
10/18/04
PD- 91705B
IRF7322D1
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 — — V VGS = 0V, ID = -250µA
RDS(on) Static Drain-to-Source On-Resistance — 0.049 0.062 VGS = -4.5V, ID = -2.9A
— 0.082 0.098 VGS = -2.7V, ID = -1.5A
VGS(th) Gate Threshold Voltage -0.70 — — V VDS = VGS, ID = -250µA
gfs Forward Transconductance — 5.9 — S VDS = -10V, ID = -1.5A
IDSS Drain-to-Source Leakage Current — — -1.0 VDS = -16V, VGS = 0V
— — -25 VDS = -16V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage — — 100 VGS = -12.0V
Gate-to-Source Reverse Leakage — — -100 VGS = 12.0V
QgTotal Gate Charge — 1 9 29 I D = -2.9A
Qgs Gate-to-Source Charge — 4.0 6.1 nC V DS = -16V
Qgd Gate-to-Drain ("Miller") Charge — 7 .7 12 VGS = -4.5V (see figure 6) Â
td(on) Turn-On Delay Time — 15 22 VDD = -10V
trRise Time — 40 60 ID = -2.9A
td(off) Turn-Off Delay Time — 42 63 R G = 6.0Ω
tfFall Time — 49 73 RD = 3.4Ω Â
Ciss Input Capacitance — 780 — VGS = 0V
Coss Output Capacitance — 470 — pF VDS = -15V
Crss Reverse Transfer Capacitance — 2 40 — ƒ = 1.0MHz (see figure 5)
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current (Body Di o de ) — — -2.5 A
ISM Pulsed Source Current (Body Diode) — — -21
VSD Body Diode Forward Voltage — — -1.2 V TJ = 25°C, IS = -2.9A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 47 71 ns TJ = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge — 49 73 nC di/dt = 100A/µs Â
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units. Conditions
IF(av) Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
2 T A = 70°C
ISM Max. peak one cycle Non-repetitive 12 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
8 T
J = 125°C
CtMax. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR
Schottky Diode Electrical Specifications
V
mA
See Fig. 14
IRF7322D1
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10
20µs PU LSE WIDT H
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resi s tance
DS(on)
(Normalized)
A
I = -2.9A
V = -4.5V
D
GS
Power Mosfet Characteristics
IRF7322D1
4www.irf.com
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drai n Voltage (V)
-I , Reverse Drai n C ur rent (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitan c e (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7322D1
www.irf.com 5
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 10. Typical On-Resistance Vs. Drain
Current Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
0
.0
0
.2
0
.4
0
.6
0
.8
0 4 8 121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0
.03
0
.04
0
.05
0
.06
0
.07
0
.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to -S o u rce V o l tag e (V )
I = -5.3A
D
IRF7322D1
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 - Typical Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 4 8 12 16 20
R




 

)

J
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1
.0
FM
F
Instantaneous Forward C urrent - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0
F(AV)
A
Average Forwa rd Current - I (A)
Allowable Ambient Temperature - (°C
)
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
DC
V = 20V
R = 62.5°C/W
Square wave
r
thJA
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Forward Voltage Drop - VF (V)
IRF7322D1
www.irf.com 7
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIM ENSIO NS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXC EED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXC EED 0.15 [.006].
8X 1.78 [.07
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF7807D1 (FETKY)
XXXX
807D1
Y = LAST DIGIT OF THE YEAR
A = AS S EMBLY SIT E CODE
WW = WEEK
LOT CODE
PRODUCT ( OPTIONAL)
P = DISGNATES L EAD - FREE
DATE CODE (YWW)
PART NUMBER
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.05 0 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.02 5 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.2 5 [ . 010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [. 004]
4312
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
SO-8 (Fetky) Part Marking Information
IRF7322D1
8www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIME NSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINA L NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .3 18 )
7.9 ( .3 12 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EI A-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)