1. General description
The 74HC00; 74HCT00 are high-speed Si-gate CMOS devices that comply with JEDEC
standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).
The 74HC00; 74HCT00 provides a quad 2-input NAND function.
2. Features and benefits
Input levels:
For 74HC00: CMOS level
For 74HCT00: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115 -A ex ce eds 20 0 V
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
3. Ordering information
74HC00; 74HCT00
Quad 2-input NAND gate
Rev. 6 — 14 December 2011 Product data sheet
Table 1. Ordering information
Type number Package
Temper ature range Name Description Version
74HC00N 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
74HCT00N
74HC00D 40 C to +125 C SO14 plastic small outline package; 14 leads; body width
3.9 mm SOT108-1
74HCT00D
74HC00DB 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body
width 5.3 mm SOT337-1
74HCT00DB
74HC00PW 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm SOT402-1
74HCT00PW
74HC00BQ 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5 30.85 mm
SOT762-1
74HCT00BQ
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 2 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
4. Functional diagram
5. Pinning information
5.1 Pinning
5.2 Pin description
Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate)
mna212
1A 1Y
1B
1
23
2A 2Y
2B
4
56
3A 3Y
3B
9
10 8
4A 4Y
4B
12
13 11
mna246
3
1
2&
6
4
5&
8
9
10 &
11
12
13 &
mna211
A
B
Y
(1) This is not a supply pin. The substrate is attached to this
pad using conductive die attach material. There is no
electrical or mechanical requirement to solder this pad.
However, if it is soldered, the solder land should remain
floating or be connected to GND.
Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 Fig 5. Pin configura tion DHVQFN14
74HC00
74HCT00
1A V
CC
1B 4B
1Y 4A
2A 4Y
2B 3B
2Y 3A
GND 3Y
001aal323
1
2
3
4
5
6
7 8
10
9
12
11
14
13
001aal324
74HC00
74HCT00
GND(1)
Transparent top view
2Y 3A
2B 3B
2A 4Y
1Y 4A
1B 4B
GND
3Y
1A
VCC
6 9
5 10
4 11
3 12
2 13
7
8
1
14
terminal 1
index area
Table 2. Pin de scription
Symbol Pin Description
1A to 4A 1, 4, 9, 12 data input
1B to 4B 2, 5, 10, 13 data input
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 3 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C.
For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.
For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C.
1Y to 4Y 3, 6, 8, 11 data output
GND 7 ground (0 V)
VCC 14 supply voltage
Table 2. Pin de scription …continued
Symbol Pin Description
Table 3. Function table[1]
Input Output
nA nB nY
LXH
XLH
HHL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage 0.5 +7 V
IIK input clamping current VI < 0.5 V or VI>V
CC +0.5 V [1] -20 mA
IOK output clamping current VO<0.5 V or VO>V
CC +0.5V [1] -20 mA
IOoutput curren t 0.5 V < VO < VCC +0.5V - 25 mA
ICC supply current - 50 mA
IGND ground current 50 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation [2]
DIP14 package - 750 mW
SO14, (T)SSOP14 and
DHVQFN14 packages - 500 mW
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 4 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Re commended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC00 74HCT00 Unit
Min Typ Max Min Typ Max
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VIinput voltage 0 - VCC 0- V
CC V
VOoutput voltage 0 - VCC 0- V
CC V
Tamb ambient temperature 40 +25 +125 40 +25 +125 C
t/V i nput transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V
VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V
VCC = 6.0 V--83---ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C40 C to +85 C40 C to +125 CUnit
Min Typ Max Min Max Min Max
74HC00
VIH HIGH-level
input voltage VCC = 2.0 V - 1.2 - 1.5 - 1.5 - V
VCC = 4.5 V - 2.4 - 3.15 - 3.15 - V
VCC = 6.0 V - 3.2 - 4.2 - 4.2 - V
VIL LOW-level
input voltage VCC = 2.0 V - 0.8 - - 0.5 - 0.5 V
VCC = 4.5 V - 2.1 - - 1.35 - 1.35 V
VCC = 6.0 V - 2.8 - - 1.8 - 1.8 V
VOH HIGH-level
output voltage VI = VIH or VIL
IO = 20 A; VCC = 2.0V-2.0-1.9- 1.9 - V
IO = 20 A; VCC = 4.5V-4.5-4.4- 4.4 - V
IO = 20 A; VCC = 6.0V-6.0-5.9- 5.9 - V
IO = 4.0 mA; VCC = 4.5 V - 4.32 - 3.84 - 3.7 - V
IO = 5.2 mA; VCC = 6.0 V - 5.81 - 5.34 - 5.2 - V
VOL LOW-level
output voltage VI = VIH or VIL
IO = 20 A; VCC = 2.0V-0-- 0.1- 0.1 V
IO = 20 A; VCC = 4.5V-0-- 0.1- 0.1 V
IO = 20 A; VCC = 6.0V-0-- 0.1- 0.1 V
IO = 4.0 mA; VCC = 4.5 V - 0.15 - - 0.33 - 0.4 V
IO = 5.2 mA; VCC = 6.0 V - 0.16 - - 0.33 - 0.4 V
IIinput leakage
current VI = VCC or GND;
VCC =6.0V ---- 1- 1A
ICC supply current VI = VCC or GND; IO=0A;
VCC =6.0V ---- 20 - 40 A
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 5 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
10. Dynamic characteristics
CIinput
capacitance -3.5-- - - - pF
74HCT00
VIH HIGH-level
input voltage VCC = 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V
VIL LOW-level
input voltage VCC = 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V
VOH HIGH-level
output voltage VI = VIH or VIL; VCC = 4.5 V
IO = 20 A - 4.5 - 4.4 - 4.4 - V
IO = 4.0 mA - 4.32 - 3.84 - 3.7 - V
VOL LOW-level
output voltage VI = VIH or VIL; VCC = 4.5 V
IO = 20 A; VCC = 4.5V-0-- 0.1- 0.1 V
IO = 5.2 mA; VCC = 6.0 V - 0.15 - - 0.33 - 0.4 V
IIinput leakage
current VI = VCC or GND;
VCC =6.0V ---- 1- 1A
ICC supply current VI = VCC or GND; IO=0A;
VCC =6.0V ---- 20 - 40 A
ICC additional
supply current per input pin;
VI=V
CC 2.1 V; IO=0A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
- 150 - - 675 - 735 A
CIinput
capacitance -3.5-- - - - pF
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C40 C to +85 C40 C to +125 CUnit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; CL= 50 pF; for load circuit see Figure 7.
Symbol Parameter Conditions 25 C40 C to +125 CUnit
Min Typ Max Max
(85 C) Max
(125 C)
74HC00
tpd propagation delay nA, nB to nY; see Figure 6 [1]
VCC = 2.0 V - 25 - 115 135 ns
VCC = 4.5 V - 9 - 23 27 ns
VCC = 5.0 V; CL=15pF - 7 - - - ns
VCC = 6.0 V - 7 - 20 23 ns
tttransition time see Figure 6 [2]
VCC = 2.0 V - 19 - 95 110 ns
VCC = 4.5 V - 7 - 19 22 ns
VCC = 6.0 V - 6 - 16 19 ns
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 6 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD=C
PD VCC2fiN+ (CLVCC2fo) where:
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CLVCC2fo) = sum of outputs.
11. Waveforms
CPD power dissipation
capacitance per package; VI=GNDtoV
CC [3] -22- - -pF
74HCT00
tpd propagation delay nA, nB to nY; see Figure 6 [1]
VCC = 4.5 V - 12 - 24 29 ns
VCC = 5.0 V; CL=15pF - 10 - - - ns
tttransition time VCC = 4.5 V; see Figure 6 [2] ---2922ns
CPD power dissipation
capacitance per package;
VI=GNDtoV
CC 1.5 V [3] -22- - -pF
Table 7. Dynamic characteristics …continu ed
GND = 0 V; CL= 50 pF; for load circuit see Figure 7.
Symbol Parameter Conditions 25 C40 C to +125 CUnit
Min Typ Max Max
(85 C) Max
(125 C)
Measurement points are given in Table 9.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 6. Input to output propagation delays
001aai814
nA, nB input
V
I
GND
V
OH
V
OL
nY output
t
THL
t
TLH
V
M
V
M
V
X
V
Y
t
PHL
t
PLH
Table 8. Measur ement points
Type Input Output
VMVMVXVY
74HC00 0.5VCC 0.5VCC 0.1VCC 0.9VCC
74HCT00 1.3 V 1.3 V 0.1VCC 0.9VCC
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 7 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Test data is given in Table 9.
Definitions test circuit:
RT = termination resistance should be equal to output impedance Zo of the pulse generator.
CL = load capacitance including jig and probe capacitance.
Fig 7. Load circuitry for measuring switching times
001aah768
tW
tW
tr
tr
tf
VM
VI
negative
pulse
GND
VI
positive
pulse
GND
10 %
90 %
90 %
10 % VMVM
VM
tf
VCC
DUT
RT
VIVO
CL
G
Table 9. Test data
Type Input Load Test
VItr, tfCL
74HC00 VCC 6.0 ns 15 pF, 50 pF tPLH, tPHL
74HCT00 3.0 V 6.0 ns 15 pF, 50 pF tPLH, tPHL
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 8 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
12. Package outline
Fig 8. Package outline SOT27-1 (DIP14)
UNIT A
max. 1 2 (1) (1)
b1cD (1)
Z
Ee M
H
L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT27-1 99-12-27
03-02-13
A
min. A
max. bmax.
w
ME
e1
1.73
1.13 0.53
0.38 0.36
0.23 19.50
18.55 6.48
6.20 3.60
3.05 0.2542.54 7.62 8.25
7.80 10.0
8.3 2.24.2 0.51 3.2
0.068
0.044 0.021
0.015 0.77
0.73
0.014
0.009 0.26
0.24 0.14
0.12 0.010.1 0.3 0.32
0.31 0.39
0.33 0.0870.17 0.02 0.13
050G04 MO-001 SC-501-14
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
e
D
A2
Z
14
1
8
7
b
E
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 9 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Fig 9. Package outline SOT108-1 (SO14)
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 10 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Fig 10. Package outline SOT337-1 (SSOP14)
UNIT A1A2A3bpcD
(1) E(1) eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.21
0.05 1.80
1.65 0.25 0.38
0.25 0.20
0.09 6.4
6.0 5.4
5.2 0.65 1.25 0.2
7.9
7.6 1.03
0.63 0.9
0.7 1.4
0.9 8
0
o
o
0.13 0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT337-1 99-12-27
03-02-19
(1)
wM
bp
D
HE
E
Z
e
c
vMA
X
A
y
17
14 8
θ
A
A1
A2
Lp
Q
detail X
L
(A )
3
MO-150
pin 1 index
0 2.5 5 mm
scale
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
A
max.
2
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 11 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Fig 11. Package outline SOT402-1 (TSSOP14)
UNIT A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.05 0.95
0.80 0.30
0.19 0.2
0.1 5.1
4.9 4.5
4.3 0.65 6.6
6.2 0.4
0.3 0.72
0.38 8
0
o
o
0.13 0.10.21
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT402-1 MO-153 99-12-27
03-02-18
wM
bp
D
Z
e
0.25
17
14 8
θ
A
A1
A2
Lp
Q
detail X
L
(A )
3
HE
E
c
vMA
X
A
y
0 2.5 5 mm
scale
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
A
max.
1.1
pin 1 index
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 12 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Fig 12. Package outline SOT762-1 (DHVQFN14)
terminal 1
index area
0.51
A1Eh
b
UNIT ye
0.2
c
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 3.1
2.9
Dh
1.65
1.35
y1
2.6
2.4 1.15
0.85
e1
2
0.30
0.18
0.05
0.00 0.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT762-1 MO-241 - - -- - -
0.5
0.3
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT762-1
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
14 terminals; body 2.5 x 3 x 0.85 mm
A(1)
max.
AA1c
detail X
y
y1C
e
L
Eh
Dh
e
e1
b
26
13 9
8
7
1
14
X
D
E
C
BA
02-10-17
03-01-27
terminal 1
index area
AC
CB
vM
wM
E(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
D(1)
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 13 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
13. Abbreviations
14. Revision history
Table 10. Abbreviations
Acronym Description
CMOS Complementary Metal-Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
LSTTL Low-power Schottky Transistor-Transistor Logic
MM Machine Model
TTL Transistor-Trans istor Logic
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
74HC_HCT00 v.6 20111214 Product data sheet - 74HC_HCT00 v.5
Modifications: Legal pages updated.
74HC_HCT00 v.5 20101125 Product data sheet - 74HC_HCT00 v.4
74HC_HCT00 v.4 20100111 Product data sheet - 74HC_HCT00 v.3
74HC_HCT00 v.3 20030630 Product data sheet - 74HC_HCT00_CNV v.2
74HC_HCT00_CNV v.2 19970826 Product specification - -
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 14 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
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data sheet shall define the specification of the product as agreed between
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly object s to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document cont ains the product specification.
74HC_HCT00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 14 December 2011 15 of 16
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lif ied nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specificat ions.
15.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors 74HC00; 74HCT00
Quad 2-input NAND gate
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 December 2011
Document identifier: 74HC_HCT00
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
17. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
5 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Functional description . . . . . . . . . . . . . . . . . . . 3
7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Recommended operating conditions. . . . . . . . 4
9 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
10 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
16 Contact information. . . . . . . . . . . . . . . . . . . . . 15
17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16