G E SOLID STATE [-- t | 3875081 GE SOLID STATE G1 01g 17927, Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T: 29-19 =-TmA 5 H o -t 10 COLLECTOR CURRENT (Ic) - mA 9208-42777 Fig. 9 Typical base-to-emitter saturation voltage characteristics for 2N3905 and 2N3906. 1 COLLECTOR CURRENT (Ic) - mA -10 92CseazTTy Fig. 11Typical collector-to-emitter saturation voltage charactoristics for 2N39085. -0001 -0.01 -O1 BASE CURRENT (Ig) - mA o2es- 42778 Fig. 10Typical collector-to-emitier saturation voltage characteristics for 2N3905 and 2N3906. a 04 COLLECTOR CURRENT (Ic) - mA -i0 928-42700 Fig. 12Typical collector-to-emitter saturation voltage characteristics for 2N3906. ' : TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector 31 DE f3a7s081 oOUrie? aGE SOLID STATE O1 de ff sa7sos1 OoLees ? oT -- 3875081G E-SOLID STATES 7 ole 19998 Signal Transistors T-29-4 2N4123, 2N4124, 2N4125, 2N4126 Silicon Transistors at ? TO-92 The GE/RCA 2N4123, 2N4124 NPN types and 2N4125, applications. PNP values are negative; observe proper 2N4126 PNP types are planar epitaxial passivated silicon polarity, transistors designed for general purpose amplifier These types are supplied in JEDEC T0-92 package. y MAXIMUM RATINGS, Absolute-Maximum Values: 2N4123 2N4124 2N4125 2N4126 COLLECTOR TO EMITTER VOLTAGE (Vogg).--- 1 eee cence eceeeeeeneeunes 30 25 ~30 25 Vv COLLECTOR TO BASE VOLTAGE (Vago)... eect cece cect enter ene nene 40 80 -30 25 Vv EMITTER TO BASE VOLTAGE (Vego) .- + ssc cc cect cree een trncttnaenenes 5 5 -4 -4 Vv CONTINUOUS COLLECTOR CURRENT ld). denen Vevesveacenve 200 mA TOTAL POWER DISSIPATION (Ta < 25C)..... 0.0.0.0 002 eee cee ee eee 350 mW TOTAL POWER DISSIPATION (Tg = 25C) (Pq)... se cece eect e ner eeee 1 Ww DERATE FACTOR Tg > 25C oo. c cine e rice renee tect en cere teeentenee 2.8 mWieG DERATE FACTOR Tg > 25C 2... ccc sci cc cence cet ee cette tee rete 8 mWieC OPERATING TEMPERATURE (Ty)... .-. 00 sce rere cen seen renasernsaece ~ 65 to +150 C STORAGE TEMPERATURE (Tog)... 2: - 0 eee ce cece tec e eee eee ee -55to +150 c LEAD TEMPERATURE, 146 + 192" (1.58mm + 0.8mm) from case for 10s max. (TL)........- +260 C File Number 2057 32= G E SOLID STATE o1 DE BJ sa7soa1 0017929 4 i 3875081 GE SOLID STATE O1E 17929 D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T 29/9 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL 2N4123 2N4124 2N4125 2N4126 UNITS MIN. | MAX. | MIN. | MAX | MIN. | MAX. | MIN. | MAX Collector-Emitter Breakdown Voltage VierycEo - (lg = 1mA, Ig = 0) 30 - _ - -30 _ _ _ (ig = 1MA, Vag = 0) = - 25 - = [-25] Collector-Base Breakdown Voltage Vv (lg = 10zA, Ie = 0) Visricao| 40 - 30 - | -30| | -25 |] = Emitter-Base Breakdown Voltage (ig = 10pA, ig = 0) Vipryeso} 5 = 5 = -4 | - -4 | - Collector Cutoff Current WVop = 20V, le = 0) lepo - 50 _- 50 - -50 _ -50 nA Emitier-Base Reverse Current (Veg = 3V, Io = 0) leBo - 50 - 50 | -50| | -50 DC Forward Current Transfer Ratio (Voge = 1V,Ig = 2mA) Nee 50 ; 150 | 120 | 360 | 50 | -160| -120| -360 (Voce = 1V, lo = 50mA)* 25 _ 60 - [| -25} - [| -so] - Small-Signal Forward Current Transfer Ratio (VE = 20V, Ig = 10mA, f = 100 MHz) h 2.5 = 3 = 2 - 2.5 - -- (Vog = 1Vi Io = 2mA,f = 1 kHz) fe 50 | 200 | 120 } 480 | 50 | 200 | 120 | 4a0 Collector-Emitter Saturation Voltage (Ilg= SOmA, ig= 5mA) Veersan | 0.3 - 0.3 - -0.4 _ ~0.4 Vv Base Emitter Saturation Voltage (ig = SOMA, Ip = SMA)* Veersan - 0.95 - 0.95 = -0.95, 0.95 Collector-Base Capacitance (Von = 5V, Ip = 0,f = 100 kHz) Cop - 4 - 4 - 45 ~ 45 Emitter-Base Capacitance pF (Veg = 0.5V, Io = 0,f = 100 kHz) Ci - 8 - 8 - 10 - 10 Gain Bandwidth Product Voge = 20V, I= = 10mA, f = 100 MHz) - fy 250 - 300 - 200 = 250 =_ MHz Nolse Figure (Broad Band) NF (ig = 100MA, Veg = 5V, Ag = 1k Bandwidth = 10 Hz to 15.7 kHz) - 6 - 5 - 5 - 4 dB * Pulse Conditions: < 300pzs Pulse width, < 2% Duty Cycle. COLLECTOR- A= 125C, TA = 25 40 1 100 COLLECTOR CURRENT (Ig) - mA COLLECTOR CURRENT (Ic) - mA * 9205-42761 92ce- 42770 Fig. 1 Typical de forward current transter ratio characteristics for Fig, 2-- Typical de forward current transfer ratio characteristics for 2N4123, 2N4124. [AilemermepahatcelbnGE SOLID STATE O1 DE i 3s7soa1 0017930 5 qq 3875081 G E SOLID STATE D1E 17930 D Signal Transistors TT - 2 S - / GF 2N4123, 2N4124, 2N4125, 2N4126 > i = o1 1 10 1 COLLECTOR CURRENT (Ic) - mA BASE CURRENT (Ig) - mA 9eCS-42785 9208-42772 Fig. 3 Typical base-to-emitter saturation voltage characteristics for Fig. 4 Typical collector-to-emitter saturation voltage characteristics 2N4123 and 2N4124, for 2N4124 and 2N4123, VOLTAGE (Vogeat)-V COLLECTOR EMITTER of 0 100 1 10 COLLECTOR CURRENT (Ic) - mA COLLECTOR CURRENT (I)- mA 9208-42773 9208-42774 Fig. Typical coltector-to-emitter saturation voltage characteristics Fig. 6Typloal collector-to-emitter saturation voltage charactaristics for 2N4123, for 2N4124, RATIO (hFE) 4 1 10 10 5 1 COLLECTOR CURRENT (Ic)-mA COLLECTOR CURRENT {ic} - mA 9208-42775 32CE-427T8 Fig. 7~ Typical dc torward-current transfer ratio characteristics for Fig. 8 Typical de forward-current transfer ratio characteristics for 2N4125, 2N41726, meG E SOLID STATE 3875081 GE SOLID STATE han - bY OL de Qf) se7soa1 o017931 7 i O1E 17931 OD Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 2 }le/lp = 10 ae i |__ a rm a6c =e 1 Lr w x a > BSE Cf teen I RATURE (TAD AMBIENT T : psu ta BS | Llp ener ager C 04 4 -10 ~100 COLLECTOR CURRENT (Ic)- mA 9208-42777 Fig. 9 Typical base-to-emitier saturation voltage characteristics for 2N4125 and 2N4126. 704 -1 10 COLLECTOR CURRENT (Ic)- mA O2Cb-42778 Fig. 11Typical collector-to-emitter saturation voltage characteristics for 2N4125, T29/7T ~0.001 -0 01 O41 -t * =10 BASE CURRENT (Ip)-MA oars Fig. 10-- Typical collector-to-emitter saturation voltage characteristics for 2N4125 and 2N4126, 04 COLLECTOR CURRENT (Ic) - mA 92cs-42700 Fig. 12Typical collector-to-emitter saturation voltage characteristics for 2N4126, TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector 35