Single Diode Schottky Barrier Diode M1FP3 MS+@i OUTLINE Package : MIF Unit!mm Weight 0.027g(Typ) 30V_1.29A ia e/)\QJSMD Small SMD 72 Ve=0.4V Ultra-Low Vr=0.4V e/\y>USBALE Reverse connect protection for DC power source DCHRAORA DC OR-output DC/DCI-/\3 ~~ & DC/DC Converter eof @esd./\Y OY Mobile phone, PC Mew RATINGS BYE T7 Cathode mark I | P6N |} 8 D4 4 s a4 Bey bia (fa) Type No. Date code 3.9 a 4 = (i {tT i HIRI OVe Cte Ic Web 4 b IS CRRA Ege) & CBN FS, Hellz ILOV TRA COEF A vo. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection". @i@xtHATH Absolute Maximum Ratings (HED TI=25C) Item Symboll Conditions Hye MIFPS Unit fF ime Storage Temperature Tstg 565~125 eC fet bie . Operation Junction Temperature Tj 125 Cc 2 TUE T Maximum Fleverse Voltage Vem 30 V oe cone FY S FUMIE A be I BOH2 TRE, WERE LL A Pa=25C On alumina substrate 1,29 4, Average Rectified Forward Current Oo 50Hz sine wave, Resistance load T=109C 2 1) p AEBEIERE a f ~ On glass-epoxy substrate . tb ABA HE I SOHzIEGkR, JER LI ob A, T] = 25T 30 A Peak Surge Forward Current FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C @BAN- MASH Electrical Characteristics G#zOe T/=25C) __ 2 ANGE EE V, Ir=04A. pulse measurement MAX 0.35 V Forward Voltage F Ob Zale " Ip=1.1A, Fdoe aclinebiai MAX 0.40 He rar 2 Ae Reverse Current Ir Vr=VRM, Pulse measurement MAX 25 mA te oe t 7 = - 5 Fier CuBasnge Cj | f=1MHz, Ve=10V ryP 90 pF : We FA il | Sunction to lead MAX 20 Sead TI PIMER ; Thermal Resistance ; HE rt8 EPH On alumina substrate MAX 108 C/W Aja Junction to ambient Ty) ye ba IEE On glass-epoxy substrate MAX 186 16 (J532-1) www.shindengen.co.jp/product/semi/Single SBD Small SMD M1FP3 Miistt) CHARACTERISTIC DIAGRAMS I ete MBAR ARR CAYO Ti at Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 2 Sine wave = : i 2 2 = 5 = ~t _ ns! Ez T= 125C( TYP) a Non oj E TH=125C(MAX) . t 2c c * > 2 Ti= 27C(MAX G i a Ti= 25C(TYP) 5 = 5 3 5 cm z a y S a = == 3 =lo p ns 5 o--ES- 5 eo tp D=tp/T 3 [Pulse measurement] Pe T= a Forward Voltage Vr (VJ Average Rectified Forward Current Io (A) Number of Cycles (cycle) HEA GE RAIA ARR HoSh Reverse Current Reverse Power Dissipation Junction Capacitance 7 Y o-- ==. t T= 125C(MAX l J l [ive J Hy onl pu Ty] b= 005 = 125 + D=tp/T t i4 T)=125C be Reverse Current Ir (mA) Reverse Power Dissipation Pr (W) Junction Capacitance Cj [pF] Pulse measurement] Reverse Voltage Vr (V) Reverse Voltage Vr [V) Reverse Voltage Vr [V] T4L-F4YFA7 Ta-lo F4LF4YFA7 TI-lo Derating Curve Ta-lo Derating Curve T/-lo 24 On alumina substrate bec Db 1 b=08 NN y Average Rectified Forward Current lo (A) ie VA ; j# if ZL ~ Average Rectified Forward Current Io (A) Se 5 | eS L = il aoe a) Ae z= ] [7 = So \ s S Y= /= ZL S eV: Z| #| 2 NEN EXER \ ES = Z| \ 1 a 0 & Oo Im 10 Ambient Temperature Ta (C] Lead Temperature Ti (C) = a, a * Sine wave (i 50Hz Cillig LT E . * 50Hz sine wave is used for measurements. EMER OPES MM [89 YA eho TB) ETS Typical lt#iatin ede LTE TF. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 17