PRODUCT CATALOG MALO 2.25.0. oo _ N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 1000V, 2.0A, 6.09 PARAMETER SYMBOL UNITS . Drain-source Volt.(1) VOSS 1000_ Vde SDF 2N 1 OO JAA (Res=1-on) (1) VDGR 1000 vee] | SDF2N100 JAB Gate Source Voltage VGS 20 Vde = Brain Current Continuous FEATURES (Tec = 25C) , {D . 2 Adc i Drain Current Pulsed(3) 10M 8 A @ RUGGED PACKAGE Total Power Dissipation PD 75 W @ HI-REL CONSTRUCTION Power Dissipation 0.6 wee @ CERAMIC EYELETS Derating > 25C : @ LEAD BENDING OPTIONS Operating & Storage Temp. | Tu/Tsig -55 TO +150 C @ COPPER CORED 52 ALLOY PINS Thermal Resistance RthJec 1.7 C/W @ LOW IR LOSSES Max.Lead temperature TL 300 C @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 ER. SCR ELECTRICAL CHARACTERISTICS Te=2sec (WNLESS,OTHER- EENING PARAMETER SYMBOL| TEST CONDITIONS MIN J TYP..| MAX JUNITS SCHEMAT I C Drain-source VGS=0V . Breakdown Volt |(8R)0ss ID=250 pA 1000) ~ - Vv TERMINAL CONNECTIONS Gate Threshold : : G H Voltage VGS(TH)}VDS=VGS [D=250NA {2.01 - 14.5] V TIGATE 1] DRAIN Leakage _| 'GSS_|VeS=#20 V 7 | - [100] nA 2[DRAIN | 2] SOURCE Zero Gate VDS=MAX.RATING VGS=0; | - |250] MA 3}SQURCE |3{ GATE. [Voltage Drain | IDSS lVps=0.8 MAX.RATING STANDARD BEND Current v6S=0. Tu=125C | ~ | |}000) HA CONF IGURAT IONS JAA Static. Drain- , , VGS=10 V Source On-State|RDS(ON - | - {6.0} O Resisiance(L) (ON)! 1D=1.0A - Forward Trans- vOS 2 15 V Conductance (2) 9fS | \Ds=1.0a- 1.5] - | - |s(o) Input Capacitance! CISS |. . -.|720| - pF Output Capacitance) COSS |YGS=OV_ VDS=25 V ~ |60/ pF Reverse Transfer f=1.0 MHz is | - F Capacitance CRSS . ~ id Turn-On Delay |td({on) | ypp=soov Z0#20n -- | = | 30] ns Rise Time tr (wosret itching ti ~ {| | 35 | n Turn-Off Delayltd(off)lare essentially indepen-| | | 80 | ns Fall Time tf dent of operating temp.) [_ _ 55 ns Total Gate Charge Gate Source Plus} Qg - - | 40 7 nc ate-Soul VDS-0.8' MAX. RATING | Gate-Source =0. . Charge Qgs (Gate charge is essent - - |} =- | 10] nc (CUSTOM BEND OPTIONS AVAILABLE) Gate-Dral Jally independent o et- , Cui ler) Qed operating temperature) -|- /as| anc STANDARD BEND JAB arge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (}MGESS. OTHER. PARAMETER SYMBOL TEST. CONDITIONS MIN.| TYP .{|MAX .JUNITS Continuous 7 ~ Modified MOSFET Source Current] {[S - - | - 12.0] A u symbol showing the : (Body Diode) integral reverse Pulse Source P-N junction recti-_|. Current (Body | ISM |fier (See schematic)| - | - |8.0| A Diode) (1) Diode Forward {F=2.0A VGS=0V - -_- Voltage (2) | VSD |tcesa5ec 1.5) V . Tce=+25 C ps | Reverse . _: - 2 : Recovery Time | frr | 1F=2.0A 800 ns 1 di/dt=100A/ NS (CUSTOM BEND OPTIONS AVAILABLE) 1) TJ = 25C to 150C. 2) Pulse test: Pulse Width <300nS, Duty Cycle <2%. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A45