RMB2S - RMB6S
Taiwan Semiconductor
1 Version: H1810
0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
● Ideal for automated placement
● Reliable low cost construction utilizing molded plastic
technique
● High surge current capability
● Small size, simple installation
● UL Recognized File # E-326243
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Lighting application
MECHANICAL DATA
● Case: TO-269AA (MBS)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.12g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV) 0.8 A
VRRM 200 - 600 V
IFSM 30 A
TJ MAX 150 °C
Package TO-269AA (MBS)
Configuration Quad
TO-269AA (MBS)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S RMB6S UNIT
Marking code on the device RMB2S RMB4S RMB6S
Repetitive peak reverse voltage VRRM 200 400 600 V
Reverse voltage, total rms value VR(RMS) 140 280 420 V
Maximum DC blocking voltage VDC 200 400 600 V
Maximum average forward current 60Hz sine wave
resistance load on glass-epoxy P.C.B. IF(AV)
0.5 A
Maximum average forward current 60Hz sine wave
resistance load on aluminum substrate 0.8 A
Surge peak forward current, 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 30 A
Rating for fusing (t<8.3ms) I2t 3.74 A2s
Junction temperature TJ - 55 to +150 °C
Storage temperature TSTG - 55 to +150 °C
RMB2S - RMB6S
Taiwan Semiconductor
2 Version: H1810
THERMAL PERFORMANCE
PARAMETER SYMBOL TYP UNIT
Junction-to-ambient thermal resistance per diode RӨJA 85 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
Forward voltage per diode (1) IF = 0.4A, TJ = 25°C VF - 1 V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
- 5 µA
TJ = 125°C - 100 µA
Junction capacitance 1 MHz, VR=4.0V CJ 13 - pF
Reverse recovery time IF=0.5A,IR=1.0A
IRR=0.25A trr - 150 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO. PART NO.
SUFFIX(*)
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE PACKING
RMBxS
(Note 1, 2) H
RC G MBS 3,000 / 13" Paper reel
MC 3,000 / 13" Plastic reel
Notes:
1. "x" defines voltage from 200V (RMB2S) to 600V (RMB6S)
2. Whole series with green compound (halogen-free)
*: Optional available
EXAMPLE
EXAMPLE P/N PART NO. PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
DESCRIPTION
RMB2SHRCG RMB2S H RC G Green compound
AEC-Q101 qualified
RMB2S - RMB6S
Taiwan Semiconductor
3 Version: H1810
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.2
0.4
0.6
0.8
1
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE (oC)
Aluminum Substrate
Glass Epoxy P.C.B.
0
5
10
15
20
25
30
0.1 1 10 100
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
0.01
0.1
1
10
100
0 20 40 60 80 100
TJ=125°C
TJ=25°C
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
RMB2S - RMB6S
Taiwan Semiconductor
4 Version: H1810
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram
0
5
10
15
20
25
30
35
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
RMB2S - RMB6S
Taiwan Semiconductor
5 Version: H1810
PACKAGE OUTLINE DIMENSIONS
TO-269AA (MBS)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N = Marking Code
YW = Date Code
F = Factory Code
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 4.50 4.90 0.177 0.193
B 0.56 0.84 0.022 0.033
C 3.60 5.00 0.142 0.197
D - 6.90 - 0.272
E 2.20 2.60 0.087 0.102
F 2.30 2.70 0.091 0.106
G - 0.20 - 0.008
H - 2.90 - 0.114
I 0.95 1.53 0.037 0.060
J 0.70 1.10 0.028 0.043
K 0.15 0.35 0.006 0.014
L 1.10 2.12 0.043 0.083
Symbol Unit (mm) Unit (inch)
A 1.70 0.067
B 0.90 0.035
C 4.40 0.173
D 8.10 0.319
E 1.30 0.051
F 6.30 0.248
RMB2S - RMB6S
Taiwan Semiconductor
6 Version: H1810
Notice
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