Band Switching Diodes MA2C858 Silicon epitaxial planar type Unit : mm For band switching 0.45 max. 2.2 0.3 1st Band 2nd Band Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -55 to +100 C 13 min. Absolute Maximum Ratings Ta = 25C Parameter 13 min. 1 0.2 max. * Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole. * Less voltage dependence of the terminal capacitance Ct * Low forward dynamic resistance rf * Optimum for a band switching of a tuner COLORED BAND INDICATES CATHODE 0.2 max. Features 2 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 Electrical Characteristics Ta = 25C Parameter Symbol Conditions Max Unit 100 nA 1 V VR = 6 V, f = 1 MHz 1.2 pF IF = 2 mA, f = 100 MHz 0.9 (DC)* IR VR = 33 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct Forward dynamic resistance rf Reverse current Min Typ Note) 1Rated input/output frequency: 100 MHz 2* : Measurement in light shielded condition Cathode Indication Type No. Color MA2C858 1st Band Yellow 2nd Band Yellow 1 MA2C858 Band Switching Diodes IF V F 102 Ta = 85C 1 10-1 1 10-1 10-2 Ta = 85C 25C 0.2 0.4 - 25C 0.6 10-3 0.8 1.0 10 20 Forward dynamic resistance rf () Forward dynamic resistance rf () 6 IF = 2 mA Ta = 25C 6 4 2 3 10 30 100 300 5 2 1 1 3 10 1.6 Terminal capacitance Ct (pF) Forward dynamic resistance rf () 1 10 30 Forward current IF (mA) 2 30 100 100 300 1 000 f = 1 MHz Ta = 25C 0.8 0.4 0 10 20 160 30 Reverse voltage VR (V) IF = 3 mA Ta = 25C rf Tester: TDC-121A 1.0 0.8 0.6 0.4 0.2 0 10 30 100 300 1 000 3 000 10 000 Frequency f (MHz) 1.2 0 120 rf f Ct VR 2 3 80 1.2 Frequency f (MHz) 3 1 40 0 Ambient temperature Ta (C) 3 0 1 000 f = 100 MHz Ta = 25C 0.3 50 4 rf IF 0 0.1 40 IF = 3 mA Ta = 25C rf Tester: TDC-121A Frequency f (MHz) 4 10 V rf f 8 1 30 Reverse voltage VR (V) rf f VR = 25 V 10-1 10-3 0 Forward voltage VF (V) 0 1 10-2 25C Forward dynamic resistance rf () 0 10 Reverse current IR (nA) Reverse current IR (nA) Forward current IF (mA) 10 10 10-2 IR T a IR V R 102 102 40