1
Band Switching Diodes
Unit : mm
MA2C858
Silicon epitaxial planar type
For band switching
■Features
•Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole.
•Less voltage dependence of the terminal capacitance Ct
•Low forward dynamic resistance rf
•Optimum for a band switching of a tuner
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) VR35 V
Forward current (DC) IF100 mA
Operating ambient temperature
Topr −25 to +85 °C
Storage temperature Tstg −55 to +100 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)*IRVR = 33 V 100 nA
Forward voltage (DC) VFIF = 100 mA 1 V
Terminal capacitance CtVR = 6 V, f = 1 MHz 1.2 pF
Forward dynamic resistance rfIF = 2 mA, f = 100 MHz 0.9 Ω
■Electrical Characteristics Ta = 25°C
Note) 1．Rated input/output frequency: 100 MHz
2．* : Measurement in light shielded condition
1 : Cathode
2 : Anode
JEDEC : DO-34
Type No. MA2C858
Color 1st Band Yellow
2nd Band Yellow
■Cathode Indication
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ±0.3
COLORED BAND
INDICATES
CATHODE
2
1
Band Switching Diodes
2
MA2C858
IF VF
rf f
rf f
IR Ta
IR VR
rf f
rf IFCt VR
10−2
0 0.2 0.4 0.6 0.8 1.0
10−1
1
10
102
Forward voltage VF (V)
Forward current IF (mA)
Ta = 85°C25°C− 25°C
10−3
0 1020304050
10−2
10−1
1
10
102
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
Ta = 85°C
25°C
10−3
0 40 80 120 160
10−2
10−1
1
10
102
Ambient temperature Ta (°C)
Reverse current IR (nA)
VR = 25 V 10 V
0
1
2
4
6
8
10 1003 30 300 1 000
Frequency f (MHz)
Forward dynamic resistance rf (Ω)
IF = 2 mA
Ta = 25°C
0
1
2
1
3
5
4
6
10 1003 30 300 1 000
Frequency f (MHz)
Forward dynamic resistance rf (Ω)
IF = 3 mA
Ta = 25°C
rf Tester: TDC-121A
0
10
0.4
0.2
0.6
1.0
0.8
1.2
100
1 000
30 300
3 000 10 000
Frequency f (MHz)
Forward dynamic resistance rf (Ω)
IF = 3 mA
Ta = 25°C
rf Tester: TDC-121A
0
0.1
1
2
3
4
1100.3 3 30 100
Forward current IF (mA)
Forward dynamic resistance rf (Ω)
f = 100 MHz
Ta = 25°C
0.4
0.8
1.2
1.6
0
010 20 30 40
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a
= 25°C
