2N6490G - ON Semiconductor - Datasheet.Directory

October, 2011 − Rev. 14

1Publication Order Number:

2N6487/D

2N6487, 2N6488, (NPN)

2N6490, 2N6491 (PNP)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

•DC Current Gain Specified to 15 Amperes −

hFE = 20−150 @ IC = 5.0 Adc

= 5.0 (Min) @ IC = 15 Adc

•Collector−Emitter Sustaining Voltage −

VCEO(sus) = 60 Vdc (Min) − 2N6487, 2N6490

= 80 Vdc (Min) − 2N6488, 2N6491

•High Current Gain − Bandwidth Product

fT = 5.0 MHz (Min) @ IC = 1.0 Adc

•TO−220AB Compact Package

•Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N6487, 2N6490

2N6488, 2N6491

VCEO 60

80

Vdc

Collector−Base Voltage

2N6487, 2N6490

2N6488, 2N6491

VCB 70

90

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous IC15 Adc

Base Current IB5.0 Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD75

0.6

W

W/°C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD1.8

0.014

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80 VOLTS, 75 WATTS

TO−220AB

CASE 221A

STYLE 1

123

4

http://onsemi.com

MARKING

DIAGRAM

2N64xxG

AYWW

2N64xx = Specific Device Code

xx = See Table on Page 5

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

See detailed ordering, marking, and shipping information in

the package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

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2

80

40

20

020 40 80 100 120 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

60

TATC

4.0

2.0

1.0

3.0

0 60 140

TA

TC

0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0) 2N6487, 2N6490

2N6488, 2N6491

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

60

80

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note)

(IC = 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490

2N6488, 2N6491

ÎÎÎÎÎ

VCEX

ÎÎÎ

70

90

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N6487, 2N6490

(VCE = 40 Vdc, IB = 0) 2N6488, 2N6491

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 65 Vdc, VEB(off) = 1.5 Vdc) 2N6487, 2N6490

(VCE = 85 Vdc, VEB(off) = 1.5 Vdc) 2N6488, 2N6491

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6487, 2N6490

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6488, 2N6491

ÎÎÎÎÎ

ICEX

ÎÎÎ

−

ÎÎÎÎ

500

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 Adc, VCE = 4.0 Vdc)

(IC = 15 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

20

5.0

ÎÎÎÎ

150

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.5 Adc)

(IC = 15 Adc, IB = 5.0 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

1.3

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 4.0 Vdc)

(IC = 15 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

1.3

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (Note 4)

(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

5.0

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

25

ÎÎÎÎ

−

ÎÎÎ

−

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • ftest

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

http://onsemi.com

3

Figure 2. Switching Time Test Circuit

1000

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (ns)

500

50

20

0.2 20

TC = 25°C

VCC = 30 V

IC/IB = 10

10 1.0 5.0

tr

0.5 2.0 10

200

100

td @ VBE(off) [ 5.0 V

NPN

PNP

+ 10 V

0

SCOPE

RB

- 4 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25 ms

- 10 V D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

FOR PNP, REVERSE ALL POLARITIES.

VCC

+ 30 V

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC (t) = r(t) RqJC

RqJC = 1.67°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

http://onsemi.com

4

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

20

Figure 5. Active−Region Safe Operating Area

2.0

10 20 80

TJ = 150°C

0.2

5.0

0.5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

40

1.0

0.1

dc

2.0 604.0

2N6487, 2N6490

2N6488, 2N6491

CURVES APPLY BELOW RATED VCEO

5.0 ms

1.0 ms

500 ms

100 ms

IC, COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of

a transistors average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown

C, CAPACITANCE (pF)

300

VR, REVERSE VOLTAGE (VOLTS)

1.0 2.0 5.0 2010

200

100

70

50

Cib

Cob

500.5

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (ns)

0.2 5.01.0 2.0 20

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

0.5

tf

5000

100

200

1000

500

50

NPN

PNP

10

Figure 7. Capacitances

Cob

NPN

PNP

700

1000

TJ = 25°C

500

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.50.2 101.0 2.0

100

50

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

200

20

NPN

2N6487, 2N6488

PNP

2N6490, 2N6491

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

5.0

VCE = 2.0 V

10

5.0 0.50.2 101.0 2.0 205.0

500

100

50

200

20

5.0

10

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

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5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 100

IC = 1.0 A

TJ = 25°C

10

4.0 A 8.0 A

20 50 20001000200 500

Figure 9. Collector Saturation Region

2.0

IB, BASE CURRENT (mA)

5.0 100 5000

1.8

1.6

1.4

1.2

IC = 1.0 A

TJ = 25°C

010

4.0 A 8.0 A

20 50

1.0

0.2

0.6

0.8

0.4

20001000200 500 5000

2.0

1.8

1.6

1.4

1.2

0

1.0

0.2

0.6

0.8

0.4

IB, BASE CURRENT (mA)

VCE(sat) @ IC/IB = 10

TJ = 25°C

VBE @ VCE = 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2 0.5 2.0 20101.0 5.0

VBE(sat) @ IC/IB = 10

2.0

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VCE(sat) @ IC/IB = 10

TJ = 25°C

VBE @ VCE = 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2 0.5 2.0 20101.0 5.0

VBE(sat) = IC/IB = 10

2.0

ORDERING INFORMATION

Device Device Marking Package Shipping

2N6487

TO−220AB

50 Units / Rail

2N6487G TO−220AB

(Pb−Free)

2N6488

TO−220AB

50 Units / Rail

2N6488G TO−220AB

(Pb−Free)

2N6490

TO−220AB

50 Units / Rail

2N6490G TO−220AB

(Pb−Free)

2N6491

TO−220AB

50 Units / Rail

2N6491G TO−220AB

(Pb−Free)

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

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6

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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