2N6661 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. * Switching Regulators * Converters 2.54 (0.100) 2 1 * Motor Drivers 3 0.74 (0.029) 1.14 (0.045) * JAN Level Screening Options 0.71 (0.028) 0.86 (0.034) * CECC Screening Options * Space Quality Level Options 45 Underside View TO-39 PACKAGE (TO-205AD) Pin 1 - Source Pin 2 - Gate Pin 3 - Drain Case - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS Drain - Source Voltage 90V VGS Gate - Source Voltage 20V ID Drain Current @ TCASE = 25C 0.9A ID Drain Current @ TCASE = 100C 0.7A IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25C 6.25W PD Power Dissipation @ TCASE = 100C 2.5W Tj Operating Junction Temperature Range -55 to 150C Tstg Storage Temperature Range -55 to 150C TL Lead Temperature ( 1 " 16 from 3A case for 10 sec.) 300C * Pulse Width Limited by Maximum Junction Temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3092 Issue 2 2N6661 ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS V(BR)DSS Drain - Source Breakdown Voltage VGS = 0V ID = 10A 90 120 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1mA 0.8 1.6 IGSS Gate - Body Leakage Current IDSS Zero Gate Voltage Drain Current VGS = 15V 100 VDS = 0V TCASE = 125C VDS = 90V VGS = 0V VDS = 72V VGS = 0V 500 On-State Drain Current RDS(on)* Drain - Source On Resistance VDS(on)* Drain - Source On Voltage VDS = 15V VGS = 10V VGS = 5V ID = 0.3A 500 1.5 VGS = 10V 1.8 4.2 5.3 3.6 4 TCASE = 125C 6.8 9 VGS = 5V ID = 0.3A 1.26 1.6 3.6 4 6.8 9 VGS = 10V TCASE = 125C gFS* Forward Transconductance VDS = 10V ID = 0.5A gOS* Common Source Output Conductance VDS = 10V ID = 0.1A nA 170 A A ID = 1A ID = 1A V 10 TCASE = 125C ID(on)* 2 V 350 mS 225 s DYNAMIC CHARACTERISTICS Cds Drain - Source Capacitance VDS = 24V 30 40 Ciss Input Capacitance VGS = 0V 35 50 Coss Output Capacitance f = 1MHz 15 40 Crss Reverse Transfer Capacitance 2 10 6 10 8 10 Typ. Max. Unit 170 8.3 K/W K/W tON SWITCHING CHARACTERISTICS VDD = 25V VGEN = 10V Turn-On Time RL = 23 RG = 25 ID = 1A tOFF pF ns Turn-Off Time * Pulse Test: tp 80 s , 1% Parameter RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Min. Document Number 3092 Issue 2