Document Number 3092
Issue 2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6661
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSIST OR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
• JAN Level Screening Options
• CECC Screening Options
• Space Quality Level Options
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDDrain Current @ TCASE = 25°C
IDDrain Current @ TCASE = 100°C
IDM Pulsed Drain Current *
PDPower Dissipation @ TCASE = 25°C
PDPower Dissipation @ TCASE = 100°C
TjOperating Junction Temperature Range
Tstg Storage Temperature Range
TLLead Temperature ( from case for 10 sec.)
90V
±20V
0.9A
0.7A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
Underside View
TO–39 PACKAGE (TO-205AD)
Pin 1 – Source
Pin 2 – Gate Pin 3 – Drain
Case – Drain
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
1 ”
16
* Pulse Width Limited by Maximum Junction Temperature
Document Number 3092
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6661
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
VGS = 0V ID= 10µA
VDS = VGS ID= 1mA
VGS = ±15V
VDS = 0V TCASE = 125°C
VDS = 90V VGS = 0V
VDS = 72V VGS = 0V
TCASE = 125°C
VDS = 15V VGS = 10V
VGS = 5V ID= 0.3A
VGS = 10V
ID= 1A TCASE = 125°C
VGS = 5V ID= 0.3A
VGS = 10V
ID= 1A TCASE = 125°C
VDS = 10V ID= 0.5A
VDS = 10V ID= 0.1A
VDS = 24V
VGS = 0V
f = 1MHz
VDD = 25V VGEN = 10V
RL= 23ΩRG= 25Ω
ID= 1A
V(BR)DSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
gOS* Common Source Output Conductance
Cds Drain - Source Capacitance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
90 120
0.8 1.6 2
±100
±500
10
500
1.5 1.8
4.2 5.3
3.6 4
6.8 9
1.26 1.6
3.6 4
6.8 9
170 350
225
30 40
35 50
15 40
210
610
810
V
nA
µA
A
Ω
V
mS
µs
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: tp≤80 µs , δ≤1%
Parameter Min. Typ. Max. Unit
RθJA Thermal Resistance, Junction to Ambient 170 K/W
RθJC Thermal Resistance, Junction to Case 8.3 K/W
Parameter Test Conditions Min. Typ. Max. Unit
