MMBT4401
Document Number: DS30039 Rev. 16 - 2
1 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4403)
Ideal for Medium Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
UL Flammability Rating 94V-0
Case material: molded Plastic “Green” Compound
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information
(Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT4401-7-F AEC-Q101 K2X / C2X 7 8 3,000
MMBT4401-13-F AEC-Q101 K2X / C2X 13 8 10,000
MMBT4401Q-13-F Automotive K2X 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Device Symbol Top View
Pin-Out
C
B
E
K2X
YM
K = SAT (Shanghai Assembly / Test site)
2X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
C = CAT (Chengdu Assembly / Test site)
2X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
MMBT4401
Document Number: DS30039 Rev. 16 - 2 2 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 600 mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Collector Power Dissipation (Note 6) PD 310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
8. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Ma x Po we r D i ssi p a ti o n (W )
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Therm al Imp ed an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Therm al Resi st ance (°C/ W)
Pu l se Wid th (s)
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pu l se Width (s)
Ma x Pow e r Dissi p a ti on (W )
100m 1 10
1m
10m
100m
175µs
15mm x 15mm 1oz Copper Board
Single Pulse
Tamb=25°C
VCE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Op e rating Area
-IC Co l l ector Curre nt (A )
-VCE Collector-Emitter Voltage (V)
MMBT4401
Document Number: DS30039 Rev. 16 - 2 3 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Collector-Base Breakdown Voltage BVCBO 60 V IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 100A, IC = 0
Collector Cutoff Current ICEX 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
Base Cutoff Current IBL 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
ON CHARACTERISTICS (Note 9)
DC Current Gain hFE
20
40
80
100
40
300
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(sat) 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 0.75
0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb 6.5 pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb 30 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 k VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500
Output Admittance hoe 1.0 30 S
Current Gain-Bandwidth Product fT 250 MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td 15 ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA Rise Time t
r
20 ns
Storage Time ts 225 ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA Fall Time tf 30 ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
MMBT4401
Document Number: DS30039 Rev. 16 - 2 4 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Figure 1 T y pical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
110
100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Collector-Emitter Saturation Voltage
vs . Col l ect or Cu r rent
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE -EM I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig ure 3 Typical B ase- E m i tter Turn -O n Vo ltage
vs. Collector Curren t
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
5
20
30
10
0.1 101.0 50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLT AGE (V)
Figure 4 Typical Capacitance Characteristics
R
C
obo
100
C
ibo
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product vs. Collector Current
C
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT4401
Document Number: DS30039 Rev. 16 - 2 5 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
MMBT4401
Document Number: DS30039 Rev. 16 - 2 6 of 6
www.diodes.com June 2013
© Diodes Incorporated
MMBT4401
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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