2013-11-06
1
BFR380F
3
1
2
Linear Low Noise Silicon Bipolar RF Transistor
• High linearity low noise driver amplifier
• Output compression point 19.5 dBm @ 1.8 GHz
• Ideal for oscillators up to 3.5 GHz
• Low noise figure 1.1 dB at 1.8 GHz
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) and halogen-free thin
small flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB14
Total power dissipation1)
TS ≤ 95°C
Ptot 380 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 145 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR380F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
VCE = 15 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 30
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - 1 500
DC current gain
IC = 40 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR380F
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.5 0.7 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 1 -
Minimum noise figure
IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz
IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz
NFmin
-
-
1.1
1.6
-
-
dB
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 40 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma
-
-
13.5
9.5
-
-
Transducer gain
IC = 40 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
11
7
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 40 mA, ZS=ZL=50 Ω, f = 1.8 GHz
IP3 - 29 - dBm
1dB compression point at output
IC = 40 mA, VCE = 3V, f = 1.8 GHz
ZS=ZL=50 Ω
ZS = ZSopt, ZL = ZLopt
P-1dB
-
-
17
19.5
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR380F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.2
0.4
0.6
0.8
1
1.2
pF
1.6
Ccb
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BFR380F
Third order Intercept Point IP3 = ƒ(IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
0 10 20 30 40 50 60 70 mA 90
IC
4
6
8
10
12
14
16
18
20
22
24
26
28
dBm
32
IP3
1V
2V
3V
4V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
0 10 20 30 40 50 60 70 80 mA 100
IC
4
5
6
7
8
9
10
11
12
13
14
GHz
16
fT
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
0 10 20 30 40 50 60 70 80 mA 100
IC
7
8
9
10
11
12
13
dB
15
G
5V
3V
2V
1V
0.7V
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BFR380F
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
5
10
15
20
25
30
35
dB
45
G
Ic = 40mA
5V
2V
1V
0.7V
Power Gain |S21|² = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
5
10
15
20
25
30
dB
40
G
Ic = 40mA
5V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(VCE):
|S21|² = ƒ(VCE): - - - -
f = parameter
0 1 2 3 4 5 6 V8
VCE
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
21
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 40mA
Power gain Gma, Gms = ƒ(IC)
VCE = 3V
f = parameter
0 20 40 60 80 mA 120
IC
5
7
9
11
13
15
17
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
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BFR380F
Minimum noise figure NFmin = ƒ(IC)
VCE = 3V, ZS = ZSopt
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
I
c
[mA]
F [dB]
f = 2.4GHz
f = 0.9GHz
f = 4GHz
f = 1.8GHz
f = 3GHz
Noise figure F = ƒ(IC)
VCE = 3V, f = 1.8 GHz
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
4
I
c
[mA]
F [dB]
Z
S
= 50Ω
Z
S
= Z
Sopt
Minimum noise figure NFmin = ƒ(f)
VCE = 3V, ZS = ZSopt
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 8.0mA/40.0mA
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BFR380F
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR380F SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFR380F SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
2013-11-06
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BFR380F
Package TSFP-3
2013-11-06
10
BFR380F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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