HAL700, HAL740
Dual Hall-Effect Sensors
with Independent Outputs
Edition Sept. 13, 2004
6251-477-2DS
DATA SHEET
MICRONAS
MICRONAS
2Sept. 13, 2004; 6251-477-2DS Micronas
Contents
Page Section Title
HAL700, HAL740 DATA SHEET
3 1. Introduction
31.1.Features
3 1.2. Family Overview
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
4 1.7. Pin Connections
5 2. Functional Description
8 3. Specifications
8 3.1. Outline Dimensions
9 3.2. Dimensions of Sensitive Area
9 3.3. Positions of Sensitive Areas
9 3.4. Absolute Maximum Ratings
9 3.4.1. Storage and Shelf Life
10 3.5. Recommended Operating Conditions
10 3.6. Characteristics
14 4. Type Description
14 4.1. HAL700
16 4.2. HAL740
18 5. Application Notes
18 5.1. Ambient Temperature
18 5.2. Extended Operating Conditions
18 5.3. Start-up Behavior
18 5.4. EMC and ESD
20 6. Data Sheet History
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 3
Dual Hall-Effect Sensors with Independent Outputs
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL700 and the HAL740 are monolithic CMOS
Hall-effect sensors consisting of two independent
switches controlling two independent open-drain out-
puts. The Hall plates of the two switches are spaced
2.35 mm apart.
The devices include temperature compensation and
active offset compensation. These features provide
excellent stability and matching of the switching points
in the presence of mechanical stress over the whole
temperature and supply voltage range.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from −40 °C up to 125 °C.
The HAL700 and the HAL740 are available in the
SMD-package SOT89B-2.
1.1. Features
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– operation with static and dynamic magnetic fields up
to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– robustness of magnetic characteristics against
mechanical stress
– short-circuit protected open-drain outputs
by thermal shut down
– constant switching points over a wide
supply voltage range
– EMC corresponding to ISO 7637
1.2. Family Overview
The types differ according to the switching behavior of
the magnetic switching points at the both Hall plates
S1 and S2.
Latching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package. The output maintains
its previous state if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
Unipolar Sensors:
In case of a south-sensitive switch, the output turns
low with the magnetic south pole on the branded side
of the package and turns high if the magnetic field is
removed. The switch does not respond to the mag-
netic north pole on the branded side.
In case of a north-sensitive switch, the output turns low
with the magnetic north pole on the branded side of
the package and turns high if the magnetic field is
removed. The switch does not respond to the mag-
netic south pole on the branded side.
Type Switching Behavior See
Page
HAL700 S1: latching
S2: latching 14
HAL740 S1: unipolar north sensitive
S2: unipolar south sensitive
16
HAL700, HAL740 DATA SHEET
4Sept. 13, 2004; 6251-477-2DS Micronas
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification tests or as produc-
tion parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and junc-
tion temperature. Please refer to section 5.1. on
page 18 for details.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
1.7. Pin Connections
Fig. 1–1: Pin configuration
Type Temperature Range
K E
HAL700 700K 700E
HAL740 740K 740E
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-2
Type: 700
Example: HAL700SF-K
→Type: 700
→Package: SOT89B-2
→Temperature Range: TJ = −40 °C to +140 °C
1VDD
4GND
3 S1-Output
2 S2-Output
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 5
2. Functional Description
The HAL700 and the HAL740 are monolithic inte-
grated circuits with two independent subblocks each
consisting of a Hall plate and the corresponding com-
parator. Each subblock independently switches the
comparator output in response to the magnetic field at
the location of the corresponding sensitive area. If a
magnetic field with flux lines perpendicular to the sen-
sitive area is present, the biased Hall plate generates a
Hall voltage proportional to this field. The Hall voltage
is compared with the actual threshold level in the com-
parator. The subblocks are designed to have closely
matched switching points. The output of comparator 1
attached to S1 controls the open drain output at Pin 3.
Pin 2 is set according to the state of comparator 2 con-
nected to S2.
The temperature-dependent bias – common to both
subblocks – increases the supply voltage of the Hall
plates and adjusts the switching points to the decreas-
ing induction of magnets at higher temperatures. If the
magnetic field exceeds the threshold levels, the com-
parator switches to the appropriate state. The built-in
hysteresis prevents oscillations of the outputs.
The magnetic offset caused by mechanical stress is
compensated for by use of “switching offset compen-
sation techniques”. Therefore, an internal oscillator
provides a two-phase clock to both subblocks. For
each subblock, the Hall voltage is sampled at the end
of the first phase. At the end of the second phase, both
sampled and actual Hall voltages are averaged and
compared with the actual switching point.
Shunt protection devices clamp voltage peaks at the
output pins and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–2 and Fig. 2–3 on page 6 show how the output
signals are generated by the HAL700 and the
HAL740. The magnetic flux density at the locations of
the two Hall plates is shown by the two sinusodial
curves at the top of each diagram. The magnetic
switching points are depicted as dashed lines for each
Hall plate separately. Fig. 2–1: HAL700 timing diagram with respect to the
clock phase
t
Clock
t
BS1
t
BS2
t
Pin 2
t
Pin 3
t
IDD
BS1on
BS2on
VOH
VOL
VOH
VOL
1/fosc
tf
tf
HAL700, HAL740 DATA SHEET
6Sept. 13, 2004; 6251-477-2DS Micronas
Fig. 2–2: HAL700 timing diagram
Fig. 2–3: HAL740 timing diagram
time
Bon,S1
Boff,S1
Boff,S2
Bon,S2
S1
Output Pin 3
S2
Output Pin 2
HAL700
0
time
Bon,S1
Boff,S1
Boff,S2
Bon,S2
S1
Output Pin 3
S2
Output Pin 2
HAL740
0
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 7
Fig. 2–4: HAL700 and HAL740 block diagram
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Hall Plate 1
Switch
Comparator
GND
4
1
VDD
Hall Plate 2
Switch
Comparator
Clock
Output 3
S1-Output
Output 2
S2-Output
Short Circuit
and
Overvoltage
Protection
S1
S2
HAL700, HAL740 DATA SHEET
8Sept. 13, 2004; 6251-477-2DS Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Weight approximately 0.039 g
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 9
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after stor-
ing the devices for 16 hours at 155 °C. The wettability was more than 95%.
SOT89B-2
x1+x2(2.35±0.001) mm
x1=x21.175 mm nominal
y 0.975 mm nominal
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 −15 281) V
VOOutput Voltage 2, 3 −0.3 281) V
IOContinuous Output Current 2, 3 −201) mA
TJJunction Temperature Range −40 170 °C
1) as long as TJmax is not exceeded
HAL700, HAL740 DATA SHEET
10 Sept. 13, 2004; 6251-477-2DS Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-
fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol Parameter Pin No. Min. Typ. Max. Unit
VDD Supply Voltage 1 3.8 −24 V
IOContinuous Output Current 3 0 −10 mA
VOOutput Voltage
(output switch off)
30−24 V
Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions
IDD Supply Current 1 3 5.5 9 mA TJ = 25 °C
IDD Supply Current
over Temperature Range 12710mA
VDDZ Overvoltage Protection
at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 2 ms
VOZ Overvoltage Protection
at Output 2, 3 −28 32 V IO = 20 mA, TJ = 25 °C, t = 15 ms
VOL Output Voltage 2, 3 −130 280 mV IOL = 10 mA, TJ = 25 °C
VOL Output Voltage over
Temperature Range 2, 3 −130 400 mV IOL = 10 mA
IOH Output Leakage Current 2, 3 −0.06 0.1 µA Output switched off, TJ = 25 °C,
VOH = 3.8 V to 24 V
IOH Output Leakage Current over
Temperature Range 2, 3 −−10 µA Output switched off, TJ ≤ 140 °C,
VOH = 3.8 V to 24 V
fosc Internal Sampling Frequency over
Temperature Range −100 150 −kHz
ten(O) Enable Time of Output after
Setting of VDD
1−50 −µsV
DD = 12 V,
B>Bon + 2 mT or B<Boff − 2mT
trOutput Rise Time 2, 3 −0.2 −µsV
DD = 12 V, RL= 2.4 kΩ, CL= 20 pF
tfOutput FallTime 2, 3 −0.2 −µsV
DD = 12 V, RL= 2.4 kΩ, CL= 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction
to Substrate Backside −−150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 11
–15
–10
–5
0
5
10
15
20
25
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA=140 °C
HAL7xx
Fig. 3–2: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
12345678
V
mA
VDD
IDD
TA = –40 °C
TA = 25 °C
TA = 140 °C
TA = 100 °C
HAL7xx
Fig. 3–3: Typical supply current
versus supply voltage
2
3
4
5
6
–50 0 50 100 150°C
mA
TA
IDD
VDD = 3.8 V
VDD = 12 V
VDD = 24 V
HAL7xx
Fig. 3–4: Typical supply current
versus ambient temperature
140
150
160
170
180
190
–50 0 50 100 150 200°C
kHz
TA
fosc
VDD = 3.8 V
VDD = 4.5 V...24 V
HAL7xx
Fig. 3–5: Typ. internal chopper frequency
versus ambient temperature
HAL700, HAL740 DATA SHEET
12 Sept. 13, 2004; 6251-477-2DS Micronas
120
140
160
180
200
220
240
0 5 10 15 20 25 30 V
kHz
VDD
fosc
TA = –40 °C
TA = 25 °C
TA = 140 °C
HAL7xx
Fig. 3–6: Typ. internal chopper frequency
versus supply voltage
120
140
160
180
200
220
240
3 3.5 4.0 4.5 5.0 5.5 6.0 V
kHz
VDD
fosc
TA= –40 °C
TA= 25 °C
TA= 140 °C
HAL7xx
Fig. 3–7: Typ. internal chopper frequency
versus supply voltage
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = –40 °C
TA = 25 °C
TA = 140 °C
IO = 10 mA
TA = 100 °C
HAL7xx
Fig. 3–8: Typical output low voltage
versus supply voltage
0
100
200
300
400
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mV
VDD
VOL
TA= –40 °C
TA= 25 °C
TA= 140 °C
IO = 10 mA
TA=100 °C
HAL7xx
Fig. 3–9: Typical output low voltage
versus supply voltage
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 13
0
50
100
150
200
250
300
–50 0 50 100 150°C
mV
TA
VOL
VDD = 24 V
VDD = 3.8 V
VDD = 4.5 V
HAL7xx
IO = 10 mA
Fig. 3–10: Typ. output low voltage
versus ambient temperature
15 20 25 30 35 V
µA
VOH
IOH
TA= 140 °C
TA= 100 °C
TA= 25 °C
10–6
10–5
10–4
10–3
10–2
10–1
100
101
102HAL7xx
Fig. 3–11: Typical output leakage current
versus output voltage
–50 0 50 100 150 200°C
µA
TA
IOH
VOH = 24 V
10–5
10–4
10–3
10–2
10–1
100
101
102HAL7xx
VOH = 3.8 V
Fig. 3–12: Typical output leakage current
versus ambient temperature
HAL700 DATA SHEET
14 Sept. 13, 2004; 6251-477-2DS Micronas
4. Type Description
4.1. HAL700
The HAL700 consists of two independent latched
switches (see Fig. 4–1) with closely matched magnetic
characteristics controlling two independent open-drain
outputs. The Hall plates of the two switches are
spaced 2.35 mm apart.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensor forms a system generating the sig-
nals required to control position, speed, and direction
of the target movement.
Magnetic Features
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– typical BON: 14.9 mT at room temperature
– typical BOFF: −14.9 mT at room temperature
– temperature coefficient of −2000 ppm/K in all mag-
netic characteristics
– operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Fig. 4–1: Definition of magnetic switching points for
the HAL700
Positive flux density values refer to magnetic south
pole at the branded side of the package.
Applications
The HAL700 is the ideal sensors for position-control
applications with direction detection and alternating
magnetic signals such as:
– multipole magnet applications,
– rotating speed and direction measurement,
position tracking (active targets), and
– window lifters.
Magnetic Thresholds
(quasistationary: dB/dt<0.5 mT/ms)
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
Typical characteristics for TJ = 25 °C and VDD = 5 V
Matching BS1 and BS2
(quasistationary: dB/dt<0.5 mT/ms)
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
Typical characteristics for TJ = 25 °C and VDD = 5 V
Hysteresis Matching
(quasistationary: dB/dt<0.5 mT/ms)
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
Typical characteristics for TJ = 25 °C and VDD = 5 V
BOFF BON
0
VOL
VO
O
utput
V
o
l
tage
B
BHYS
Para-
meter On-Point
BS1on, BS2on
Off-Point
BS1off,, BS2off
Unit
TjMin. Typ. Max. Min. Typ. Max.
−40 °C 12.5 16.3 20 −20 −16.3 −12.5 mT
25 °C 10.7 14.9 19.1 −19.1 −14.9 −10.7 mT
100 °C 7.7 12.5 17.3 −17.3 −12.5 −7.7 mT
140 °C 6.0 10.9 16.0 −16.0 −10.9 −6.0 mT
Para-
meter BS1on − BS2on BS1off − BS2off Unit
TjMin. Typ Max. Min. Typ Max.
−40 °C −7.5 0 7.5 −7.5 0 7.5 mT
25 °C −7.5 0 7.5 −7.5 0 7.5 mT
100 °C −7.5 0 7.5 −7.5 0 7.5 mT
140 °C −7.5 0 7.5 −7.5 0 7.5 mT
Parameter (BS1on − BS1off) / (BS2on − BS2off) Unit
TjMin. Typ. Max.
−40 °C 0.85 1.0 1.2 −
25 °C 0.85 1.0 1.2 −
100 °C 0.85 1.0 1.2 −
140 °C 0.85 1.0 1.2 −
DATA SHEET HAL700
Micronas Sept. 13, 2004; 6251-477-2DS 15
−20
−15
−10
−5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=−40 °C
TA= 25 °C
TA= 140 °C
TA=100 °C
HAL700
BON
BOFF
Fig. 4–2: Magnetic switching points
versus supply voltage
−20
−15
−10
−5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL700
BON
BOFF
TA=−40 °C
TA= 25 °C
TA= 140 °C
TA= 100 °C
Fig. 4–3: Magnetic switching points
versus supply voltage
−25
−20
−15
−10
−5
0
5
10
15
20
25
−50 0 50 100 150°C
mT
TA, TJ
BON
BOFF BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL700
VDD = 3.8 V
VDD = 4.5 V...24 V
Fig. 4–4: Magnetic switching points
versus ambient temperature
HAL740 DATA SHEET
16 Sept. 13, 2004; 6251-477-2DS Micronas
4.2. HAL740
The HAL740 consists of two independent unipolar
switches (see Fig. 4–5) with complementary magnetic
characteristics controlling two independent open-drain
outputs. The Hall plates of the two switches are
spaced 2.35 mm apart.
The S1-Output turns low with the magnetic south pole
on the branded side of the package and turns high if
the magnetic field is removed. It does not respond to
the magnetic north pole on the branded side.
The S2-Output turns low with the magnetic north pole
on the branded side of the package and turns high if
the magnetic field is removed. It does not respond to
the magnetic south pole on the branded side.
Magnetic Features
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– temperature coefficient of −2000 ppm/K in all mag-
netic characteristics
– operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL740 is the ideal sensor for applications which
require both magnetic polarities, such as:
– position and direction detection, or
– position and end point detection with either mag-
netic pole (omnipolar switch).
Fig. 4–5: Definition of magnetic switching points for
the HAL740
Magnetic Characteristics
(quasistationary: dB/dT < 0.5 T/ms) at TJ = −40 °C to +100 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V. Absolute values common to both Hall switches. The Hall switches S1 and S2
only differ in sign. For S1 the sign is positive, for S2 negative. Positive flux density values refer to the magnetic south
pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF,S1 BON,S1
0
VOL
VO
Output Voltage
B
BHYS
BHYS
BOFF,S2
BON,S2
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 8.5 12.3 16.0 5.0 8.8 12.5 2.0 −5.5 −10.6 −mT
25 °C 7.0 11.5 16.0 3.5 8.0 12.5 2.0 −6.0 −9.8 −mT
100 °C 5.5 10.8 16.0 2.0 7.0 12.5 1.5 −6.5 −8.9 −mT
140 °C 4.6 10.4 16.0 1.1 6.8 12.5 1.0 −7.0 −8.6 −mT
DATA SHEET HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 17
6
8
10
12
14
16
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
TA=−40 °C
TA= 25 °C
TA= 140 °C
TA=100 °C
HAL740
BON
BOFF
Fig. 4–6: Magnetic switching points
versus supply voltage
6
8
10
12
14
16
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL740
BON
BOFF
TA= −40 °C
TA= 25 °C
TA= 140 °C
TA= 100 °C
Fig. 4–7: Magnetic switching points
versus supply voltage
0
5
10
15
20
–50 0 50 100 150°C
mT
TA, TJ
BON
BOFF BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL740
V
DD = 3.8 V
VDD = 4.5 V...24 V
Fig. 4–8: Magnetic switching points
versus ambient temperature
HAL700, HAL740 DATA SHEET
18 Sept. 13, 2004; 6251-477-2DS Micronas
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + ∆T
At static conditions and continuous operation, the fol-
lowing equation applies:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax − ∆T
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see Section 3.5. on page 10).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is not
tested. For special test conditions, please con-
tact Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the “Characteristics” (see Section 3.6. on
page 10).
During the initialization time, the output states are not
defined and the outputs can toggle. After ten(O), both
outputs will be either high or low for a stable magnetic
field (no toggling). The outputs will be low if the applied
magnetic flux density B exceeds BON and high if B
drops below BOFF
.
For magnetic fields between BOFF and BON, the output
states of the Hall sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic flux density must be
above BONmax, respectively, below BOFFmin.
5.4. EMC and ESD
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 5–1). The series
resistor and the capacitor should be placed as closely
as possible to the Hall sensor.
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
WARNING:
DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS.
Fig. 5–1: Test circuit for EMC investigations
1VDD
4GND
3 S1-Output
2 S2-Output
RV
220 Ω
VEMC
VP
4.7 nF
RL2.4 kΩ
20 pF
RL2.4 kΩ
20 pF
DATA SHEET HAL700, HAL740
Micronas Sept. 13, 2004; 6251-477-2DS 19
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its content, at any time, without obligation to notify
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.
HAL700, HAL740 DATA SHEET
20 Sept. 13, 2004; 6251-477-2DS Micronas
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-477-2DS
6. Data Sheet History
1. Data sheet: “HAL700, HAL740 Dual Hall-Effect
Sensors with Independent Outputs”, June 13, 2002,
6251-477-1DS. First release of the data sheet.
2. Data Sheet: “HAL700, HAL740 Dual Hall-Effect
Sensors with Independent Outputs”, Sept. 13, 2004,
6251-477-2DS. Second release of the data sheet.
Major changes:
– new package diagram for SOT89B-2
