IGBT-IPM R series 1200V / 150A 7 in one-package
7MBP150RA120
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
VR
IC
ICP
-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Item
0
0
200
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
900
1000
800
1200
1200
150
300
150
1040
50
100
50
400
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condtion Min. Typ. Max. Unit
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=1200V input terminal open
Ic=150A
-Ic=150A
VCE=1200V input terminal open
Ic=50A
-Ic=50A
– – 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.3 V
Fig.1 Measurement of case temperature
7MBP150RA120 IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1
surface of IGBT chips
Tj=125°C
Tj=125°C
Tj=25°C Fig.2
Tj=25°C Fig.3
Iccp
ICCN
Vin(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM
3
10
1.00
1.70
-
110
-
150
-
225
75
-
11.0
0.2
1.5
-
1425
-
-
1.35
2.05
8.0
-
20
-
20
-
-
10
-
-
2
-
1500
18
65
1.70
2.40
-
125
-
-
-
-
-
-
12.5
-
-
12
1575
mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
Switching time (FWD)
ton IC=150A, VDC=600V
toff
trr IF=150A, VDC=600V
0.3 - -
- - 3.6
- - 0.4
µs
µs
µs
Thermal characteristics(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.12
- 0.29
- 0.31
0.05 -
°C/W
°C/W
°C/W
°C/W
INV IGBT
FWD
DB IGBT
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz
- 2.5 - 3.0 N·m
- 2.5 - 3.0 N·m
Recommendable value
*7 Switching frequency of IPM
Block diagram
Outline drawings, mm
Mass : 920g
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
7MBP150RA120 IGBT-IPM
7MBP150RA120 IGBT-IPM
Characteristics (Representative)
Control Circuit
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
Power supply curr ent vs. Switching frequency
Tj=100°C
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
N-side
P-side
Power supply current : Icc (mA)
Switching frequency : fsw (kHz)
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input signal threshold voltage
vs. Powe r supp ly volt age
Input s ignal threshold voltage
Pow er supply volt age : Vcc (V)
Tj=25°C
Tj=125°C
} Vin(on)
} Vin(off)
: Vin(on),Vin(off) (V)
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
Unde r volt a
g
e vs. Juncti on temperatu re
Und er vo lt a g e : VUVT ( V)
Junction temperature : T
j
(°C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
Und er volta
g
e h
y
sterisis vs. Jnction temperature
Under voltage hysterisis : VH (V)
Junction temperature : Tj (°C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Alarm hold time vs. Power supply volta
g
e
Alarm hold time : tALM (mSec)
Pow er supply volt age : Vcc ( V)
Tj=125°C
Tj=25°C
0
50
100
150
200
12 13 14 15 16 17 18
Over heatin
g
characteristics
TcOH,TjOH,Tc H, T jH vs. Vcc
O ver heati ng protect ion : T cOH, T jO H (°C)
Power supply volt a
g
e : Vcc (V)
TjOH
TcOH
TcH,TjH
O H hyst erisi s : TcH,Tj H (°C )
7MBP150RA120 IGBT-IPM
Inverter
0
50
100
150
200
250
0.511.522.533.5
Collect or current vs. Collector-Emitter voltage
Tj=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collec tor Current : Ic (A)
Collector-Emitter voltage : Vce (V)
0
50
100
150
200
250
0.511.522.533.5
Collect or current vs. Collector-Emitter voltage
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collec tor Current : Ic (A)
Collector-Emitter voltage : Vce (V)
10
100
1000
10000
0 50 100 150 200 250
Switching time vs. Collector c urrent
Edc=600V,Vcc=15V,Tj=25°C
Switchin g time : ton,toff,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
10
100
1000
10000
0 50 100 150 200 250
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
Switching time : ton,toff,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
0
50
100
150
200
250
00.511.522.53
F orward current vs. Forward voltage
125°C 25°C
Forward Cu rrent : If (A)
Forward voltage : Vf (V)
10
100
0 50 100 150 200 250
Reverse recovery char act eristic s
trr,Irr vs. IF
trr125°C
trr25°C
Irr125°C
Irr25°C
Reverse recovery current : Irr(A)
Reverse recovery time : trr(nSec)
F orward current : IF(A)
7MBP150RA120 IGBT-IPM
0.001
0.01
0.1
1
0.001 0.01 0.1 1
Transient t hermal resistance
Thermal resistance : Rth(j-c) (°C/W)
Pulse width :Pw (se c)
FWD
IGBT
0
300
600
900
1200
1500
1800
2100
0 200 400 600 800 1000 1200 1400
Reversed biased safe operating area
Vcc=15V,Tj 125°C
Collector curren t : Ic (A)
Collector-Em itter voltage : Vc e (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetiti ve pulse)
0
200
400
600
800
1000
1200
020406080100120140160
Power d erating for I GBT
(p er device)
Collecter Po wer Di ssipation : Pc (W)
Case T e m perature : Tc (°C)
0
100
200
300
400
500
0 20406080100120140160
P ower der at ing fo r F WD
(p er device)
Collecter Po wer Di ssipation : Pc (W)
Case T e m perature : Tc (°C)
0
10
20
30
40
50
60
0 50 100 150 200 250
Switching Loss vs. C ollector Current
Edc=600V,Vcc=15V,Tj=25°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collector current : Ic (A)
0
10
20
30
40
50
60
0 50 100 150 200 250
Switching Loss vs. C o llec tor Current
Edc=600V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collector current : Ic (A)
<
=
7MBP150RA120 IGBT-IPM
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140
Over current protection vs. Junction temperature
Vcc=15V
Over current protection level : Io c(A)
Junction tem perature : Tj(°C)
7MBP150RA120 IGBT-IPM
Brake
0.01
0.1
1
0.001 0.01 0.1 1
Transient ther mal resistance
Thermal resistan ce : Rth(j-c) (°C/W )
Pul se widt h :P w (sec)
IGBT
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter volta
g
e
T
j
=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector- Emitter volta
g
e : Vce
(
V
)
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter volta
e
T
j
=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collec tor- Em i tter volta
g
e : Vce
(
V
)
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
Reversed biased safe operatin
g
area
Vcc=15V,Tj 125°C
Collector current : Ic (A)
Collector-Emitter volta
g
e : Vce (V)
SCSOA
(non-re petitive pu lse)
RBSOA
(Repetitive pulse)
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device )
Collecter Power D issipation : Pc (W)
Case Temperature : Tc (°C)
0
50
100
150
200
020406080100120140
Over current protection vs. Junction temperature
Vcc=15V
Junction tem perature : Tj(°C)
Over current protection level : Io c(A)