1N5221B~1N5281B Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ-tolerance5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25 Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 200 Tstg -65~+200 Symbol Value Unit RthJA 300 K/W Tamb75 Power dissipation Storage temperature range Maximum Thermal Resistance Tj=25 Parameter Junction ambient Test Conditions I=9.5mm(3/8") TL=constant Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions Type IF=200mA Symbol VF Min Typ Max Unit 1.1 V Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/6 1N5221B~1N5281B Type 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B VZnom1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 for rzjT <30 <30 <30 <30 <29 <28 <24 <23 <22 <19 <17 <11 <7 <7 <5 <6 <8 <8 <10 <17 <22 <30 <13 <15 <16 <17 <19 <21 <23 <25 <29 <33 <35 <41 <44 <49 <58 <70 <80 <93 <105 <125 <150 <170 <185 <230 <270 rzjK at <1200 <1250 <1300 <1400 <1600 <1600 <1700 <1900 <2000 <1900 <1600 <1600 <1600 <1000 <750 <500 <500 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <700 <700 <800 <900 <1000 <1100 <1300 <1400 <1400 <1600 <1700 IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR at A <100 <100 <75 <75 <50 <25 <15 <10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 <0.5 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 15 16 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 58 TKVZ %/K <-0.085 <-0.085 <-0.080 <-0.080 <-0.075 <-0.070 <-0.065 <-0.060 <+0.055 <+0.030 <+0.030 <+0.038 <+0.038 <+0.045 <+0.050 <+0.058 <+0.062 <+0.065 <+0.068 <+0.075 <+0.076 <+0.077 <+0.079 <+0.082 <+0.082 <+0.083 <+0.084 <+0.085 <+0.086 <+0.086 <+0.087 <+0.088 <+0.089 <+0.090 <+0.091 <+0.091 <+0.092 <+0.093 <+0.094 <+0.095 <+0.095 <+0.096 <+0.096 <+0.097 <+0.097 <+0.097 <+0.098 Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 2/6 1N5221B~1N5281B Type 1N5268B 1N5269B 1N5270B 1N5271B 1N5272B 1N5273B 1N5274B 1N5275B 1N5276B 1N5277B 1N5278B 1N5279B 1N5280B 1N5281B 1) VZnom1) V 82 87 91 100 110 120 130 140 150 160 170 180 190 200 IZT mA 1.5 1.4 1.4 1.3 1.1 1 0.95 0.9 0.85 0.8 0.74 0.68 0.66 0.65 for rzjT <330 <370 <400 <500 <750 <900 <1100 <1300 <1500 <1700 <1900 <2200 <2400 <2500 rzjK at <2000 <2200 <2300 <2600 <3000 <3000 <4000 <4500 <4500 <5000 <5500 <6000 <6500 <7000 IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR A <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 at VR V 62 68 69 76 84 91 99 106 114 122 129 137 144 152 TKVZ %/K <+0.098 <+0.099 <+0.099 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 <+0.11 Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL) at 30, 9.5mm (3/8") from the diode body. Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 3/6 1N5221B~1N5281B Characteristics (Tj=25 unless otherwise specified) Figure 1. Zener Voltage versus Zener Current - Vz=1 thru 16 Volts Figure 2. Zener Voltage versus Zener Current - Vz=15 thru 30 Volts Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 4/6 1N5221B~1N5281B Figure 3. Zener Voltage versus Zener Current - Vz=30 thru 75 Volts Figure 4. Thermal resistance from junction to ambient as a function of pulse duration Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 5/6 1N5221B~1N5281B Dimensions in mm Cathode identification Type No. 0.55 max. 1N 52 Cathode 2.0 max. 26 min. 4.2 max. Anode 26 min. Standard Glass Case JEDEC DO-35 Marking 1N 52 5 0B Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 6/6