INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature Coefficient
• Soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
G ate Collector Em itter
TO-247AC
AUIRGP4066D1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VCES = 600V
IC(Nominal) = 75A
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
TO-247AD
AUIRGP4066D1-E
GC
E
C
C
E
C
G
AUTOMOTIVE GRADE
AUIRGP4066D1
AUIRGP4066D1-E
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRGP4066D1 TO-247AC Tube 25 AUIRGP4066D1
AUIRGP4066D1-E
TO-247AD
Tube
25
AUIRGP4066D1-E
Ordering Information
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 140
g
I
C
@ T
C
= 100°C
Continuous Collector Current 90
I
NOMINAL
Nominal Current 75
I
CM
Pulse Collector Current VGE = 15V 225
I
LM
Clamped Inductive Load Current VGE = 20V
c
300 A
I
F NOM INA L
Diode Nominal Current
d
75
g
I
FM
Diode Maximum Forward Current
d
300
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 454 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 227
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
f
––– ––– 0.33 °C/W
R
θ
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
f
––– ––– 0.53
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
*Qualification standards can be found at http://www.irf.com/
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2 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 50Ω, tested in production ILM ≤ 400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(B R) CES
Col l ector - to- E mi tt er B r eak down V ol tage
600 — — V V
GE
= 0V, I
C
= 200μA
f
ΔV
(BR)CES
/
ΔT
J
T emper atur e Coef f . of B r eakdown Vol tage
—0.30—V/°CV
GE
= 0V, I
C
= 15mA (25°C-175°C)
— 1.70 2.1 I
C
= 75A, V
GE
= 15V, T
J
= 25°C
d
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V I
C
= 75A, V
GE
= 15V, T
J
= 150°C
d
—2.1— I
C
= 75A, V
GE
= 15V, T
J
= 175°C
d
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 2.1mA
ΔV
GE ( t h )
/
ΔTJ Threshold Voltage temp. coefficient — -13 — mV/°C V
CE
= V
GE
, I
C
= 20mA (25°C - 175°C)
gfe Forward Transconductance — 50 — S V
CE
= 50V, I
C
= 75A, PW = 25μs
I
CES
Collector-to-Emitter Leakage Current — 3.0 200 μAV
GE
= 0V, V
CE
= 600V
—10—mAV
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.60 1.77 V I
F
= 75A
—1.54— I
F
= 75A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 150 225 I
C
= 75A
Q
ge
Gate-to-Emitter Charge (turn-on) — 40 60 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 60 90 V
CC
= 400V
E
on
Turn-On Switching Loss — 4240 5190 I
C
= 75A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 2170 3060 μJR
G
= 10
Ω
, L = 100μH, T
J
= 25°C
E
total
Total Switching Loss — 6410 8250
E ner gy l os s es i ncl u de tai l & di ode r ever s e r ecover y
t
d(on)
Turn-On delay time — 50 70 I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 80 100 ns R
G
= 10
Ω
, L = 100μH
t
d(off)
Turn-Off delay time — 200 230 TJ = 25°C
t
f
Fall time — 60 80
E
on
Turn-On Switching Loss — 6210 — I
C
= 75A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 2815 — μJR
G
=10
Ω
, L=100μH, T
J
= 175°C
E
total
Total Switching Loss — 9025 —
E ner gy l os s es i ncl u de tai l & di ode r ever s e r ecover y
t
d(on)
Turn-On delay time — 45 — I
C
= 75A, V
CC
= 400V, V
GE
=15V
t
r
Rise time — 70 — ns R
G
=10
Ω
, L=100μH
t
d(off)
Turn-Off delay time — 240 — T
J
= 175°C
t
f
Fall time — 80 —
C
ies
Input Capacitance — 4470 — V
GE
= 0V
C
oes
Output Capacitance — 350 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 140 — f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp
600V
Rg = 10Ω, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area V
CC
= 400V, Vp
600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 680 — μJT
J
= 175°C
t
rr
Diode Reverse Recovery Time — 240 — ns V
CC
= 400V, I
F
= 75A
I
rr
Peak Reverse Recovery Current — 50 — A V
GE
= 15V, Rg = 10
Ω
, L =100μH
Conditions
5——μs
pF
3 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = ≤60μs
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
1 10 100 1000
VCE (V)
0.1
1
10
100
1000
IC (A)
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1msec
0246810
VCE (V)
0
50
100
150
200
250
300
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
50
100
150
200
250
300
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25 50 75 100 125 150 175
TC (°C)
0
100
200
300
400
500
Ptot (W)
25 50 75 100 125 150 175
TC (°C)
0
25
50
75
100
125
150
IC (A)
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 8 - Typ. Diode Forward Characteristics
tp = ≤60μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = ≤60μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = ≤60μs
0.0 1.0 2.0 3.0 4.0
VF (V)
0
50
100
150
200
250
300
IF (A)
-40°C
25°C
175°C
0246810
VCE (V)
0
50
100
150
200
250
300
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 38A
ICE = 75A
ICE = 150A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 38A
ICE = 75A
ICE = 150A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 38A
ICE = 75A
ICE = 150A
4 6 8 1012141618
VGE, Gate-to-Emitter Voltage (V)
0
50
100
150
200
250
300
IC, Collector-to-Emitter Current (A)
TJ = 175°C
TJ = 25°C
5 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
0 25 50 75 100 125 150
IC (A)
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
Energy (μJ)
EOFF
EON
0 255075100
Rg (Ω)
1000
3000
5000
7000
9000
11000
13000
15000
Energy (μJ)
EOFF
EON
020 40 60 80 100 120
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
20 40 60 80 100 120 140 160
IF (A)
20
25
30
35
40
45
50
55
60
IRR (A)
RG = 100Ω
RG = 22Ω
RG = 10Ω
RG = 47Ω
050 100 150
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80 100
RG (Ω)
25
30
35
40
45
50
55
IRR (A)
6 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 75A; L = 485μH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
400 500 600 700
diF /dt (A/μs)
30
35
40
45
50
55
IRR (A)
25 75 125 175
IF (A)
500
1000
1500
2000
2500
3000
3500
Energy (μJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
0100 200 300 400 500
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
8 1012141618
VGE (V)
0
5
10
15
20
Time (μs)
0
200
400
600
800
Current (A)
Tsc
Isc
0 20 40 60 80 100 120 140 160
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 400V
VCES = 300V
200 400 600 800 1000
diF /dt (A/μs)
2000
4000
6000
8000
10000
12000
14000
16000
18000
QRR (μC)
22Ω
10Ω
100Ω
47Ω
38A
75A
150A
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.012 0.000034
0.163 0.000390
0.215 0.005990
0.139 0.033585
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.00738 0.000009
0.09441 0.000179
0.13424 0.002834
0.09294 0.0182
8 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
DC
4x
DUT
360V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
C f orce
400μH
G f orce DUT
D1 10K
C sen se
0.0075μ
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
9 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
-3036912
Time (uS)
Vce (V)
-100
0
100
200
300
400
500
600
700
Ice (A)
VCE
ICE
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
-0.20 0.00 0.20 0.40 0.60 0.80
time (μS)
V
F
(V)
Peak I
RR
t
RR
Q
RR
-100
0
100
200
300
400
500
600
700
-0.4 -0.2 0 0.2 0.4 0.6
time(μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
I
CE
(A)
90% I
CE
10% I
CE
Eof f Loss
tf
-100
0
100
200
300
400
500
600
700
-0.4 -0.2 0 0.2 0.4 0.6
time (μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
I
CE
(A)
TEST
CURRENT
90% I
CE
10%
I
CE
tr
Eon Loss
10 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
TO-247AC package is not recommended for Surface Mount Application.
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUP4066D1
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUP4066D1-E
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
12 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage
Qualification Information†
Moisture Sensitivity Level TO-247AC
TO-247AD
Charged Device Model Class C5 (+/-1125V) ††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
N/A
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/-425V) ††
AEC-Q101-002
Human Body Model Class H2 (+/-4000V) ††
AEC-Q101-001
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AUIRGP4066D1/AUIRGP4066D1-E
IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
