UT54ACS264/UT54ACTS264 Radiation-Hardened Look-Ahead Carry Generators for Counters FEATURES Performs look-ahead carry across n-bit counters Accommodates active-high or active-low carry Improves cascaded counters system performance 1.2p1 radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 16-pin DIP - 16-lead flatpack DESCRIPTION The UT54ACS264 and the UTS54ACTS264 are look-ahead gen- erators designed specifically to perform a carry-anticipate across any number of n-bit counters, thus increasing system clock frequency. A carry enable CE, and carry outputs RCOA and RCOB are provided for n-bit cascading. Use the counter with either active-high-carry or active-low-car- ry counters. For active-high-carry counters, CE is active high, the A set of inputs and output RCOA are used. The B set of inputs are connected to a low logic level. For active-low-carry counters, CE is active low, the B set of inputs and output RCOB are used. The A set of inputs are connected to a high logic level. The devices are characterized over full military temperature range of -55C to +125C, PINOUTS 16-Pin DIP Top View a1 (j1 16 [77] Voo B1Cj2 15{7] B2 aoljs 14[J a2 poC]4 13[}ce a3 ([]5 12{-} co pCj wes RcoB []7 10[_] RCOA Vsg 18 9] c2 16-Lead Flatpack Top View Al Bi AO BO A3 B3 RCOB Vss 1 2 3 4 5 6 7 8 Vpp B2 cE C1 RCOA 155 Rad-Hard MSI LogicLOGIC SYMBOL ACTIVE-HIGH INPUTS ce Oa 13 fa (12) og 23 4 mt ssf] ao t as "s t a Bi & hy 1,3,8,7 4-21 2,3,8,7 +- @) a 65.7 - C2 a 3 67 4 5 1957, +3 14 45,79 + 10 az 29 Ng or t |_ 8) Rcoa 9 4 B3 | zs ) i 2- o ot |__ acon 6+ gsm FUNCTION TABLE FOR CO OUTPUT CE Ao Bl B2 B3 G3) on @ om @ __D 15) on, (14) Bs nl Oon UT54ACS264/UTS4ACTS264 ACTIVE-LOW INPUTS Zl 12 +21 = (2) co 3-4 G2 5s La 34 + Po 1) gy 23 124 G4 7 421 56 -- bs (9) C2 75 34,6 + 12,4,6 7- G6 21 9+ 4] 7+ bs 19) RoR saea t Se 1468 + z9 124,68 cop FUNCTION TABLE FOR C2 OUTPUT INPUTS OUTPUT INPUTS OUTPUT Ao BO CE co A2 Al AQ B2 B1 Bo CE c2 H H x H H xX x H xX x x H H x H H H H x x H x x H L xX x L H H H x x H x H X L L L H H H x x x H H L xX xX x xX xX x L FUNCTION TABLE FOR C1 OUTPUT x L x L x x x L INPUTS OUTPUT x x L L L xX x L Al AO Bi BO CE c1 x x x L L L L L H xX H x x H H H x H x H FUNCTION TABLE FOR RCOA OUTPUT H H xX x H H INPUTS OUTPUT L xX X xX x L A383 A2 At AO B83 B2 BI CE RCOA xX L L x xX L H xX xX xX H xX xX xX H x x L L L L H H X X x H xX xX H H H HX x xX HH xX H FUNCTION TABLE FOR RCOB OUTPUT HH HH x x xX oH H INPUTS OUTPUT Lb xX xX %X RK XK XK X L B3 B2 Bt BO CE RCOB xX tL xX -& tL X xX xX L H x X x xX H xX xX L Xx L L x x L x H x x x H xX x x L L L L x L x x H x x H Xx x x x L L L L L x x x H x H x x x x H H L L L L L L Rad-Hard MSI Logic 156 aeUTS4ACS264/UTS4ACTS264 LOGIC DIAGRAM RCOB CE RCOA B3 A3 c2 B2 A2 c1 B1 Al Bo AO 157 Rad-Hard MSI LogicRADIATION HARDNESS SPECIFICATIONS ! UTS4ACS264/UT54ACTS264 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU & SEL Threshold * 80 MeV-cm?/mg Neutron Fluence 1.0E14 nf/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage -0.3 to 7.0 v Vyo Voltage any pin -.3 to Vpp +.3 v TstG Storage Temperature range -65 to +150 C Ty Maximum junction temperature +175 C TLs Lead temperature (soldering 5 seconds) +300 c ic Thermal resistance junction to case 20 C/W I DC input current +10 mA Pp Maximum power dissipation 1 WwW Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage 4.5to 5.5 Vv VIN Input voltage any pin 010 Vpp Vv Te Temperature range -55 10 + 125 C Rad-Hard MS! Logic 158UTS4ACS264/UTS4ACTS264 DC ELECTRICAL CHARACTERISTICS 7 (Vpp = 5.0V 10%: Vgg = OV , -55C < Te < +125C) SYMBOL PARAMETER CONDITION MIN MAX UNIT Vit Low-level input voltage ! ACTS 0.8 v ACS 3Vpp Vin High-level input voltage ! ACTS 5Vpp v ACS -Vpp Iw Input leakage current ACTS/ACS Vin = Vpp or Vss -l1 1 pA Vou Low-level output voltage ACTS Iou = 8mA 0.40 Vv ACS Io. = 100A 0.25 Vou High-level output voltage 3 ACTS lox =-8mA TVpp Vv ACS lou = -100HA Vpp - 0.25 los Short-circuit output current 24 ACTS/ACS Vo = Vpp and Vss -200 200 mA Protal Power dissipation -9 C_ = SOpF 2.2 mW/ MHz Ippo Quiescent Supply Current Vpp = 5.5V 10 pA Cin Input capacitance 5 f = IMHz @ 0V 15 pF Cour Output capacitance * f= 1MHz @ 0V 15 pF Notes: L. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: Viz = Vjy(min) + 20%, - 0%; Vi = Vy_ (max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to V7;{min) and Vj), (max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-M-38510, for current density < 5.0E5 amps/cm?, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capaci at frequency of 1MHz and a signal amplitude of 50mV mms maximum. 6. Maximum allowable relative shift equals 50m V. 7. All specifications valid for radiation dose < 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. d between the desi d inal and Vg 159 Rad-Hard MSI LogicAC ELECTRICAL CHARACTERISTICS ? (Vpp = 5.0V 10%; Veg = OV !, -55C < Tp < +125C) UTS4ACS264/UTS4ACTS264 SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tppy CE to CO, C1, C2 1 17 ns tpHL CE to CO, C1, C2 1 16 ns tela An or Bn to CO, C1, C2 I 15 ns teu An or Bn to CO, C1, C2 1 17 ns tpLy An, Bn or CE to RCOA i 15 ns tpHL An, Bn or CE to RCOA 1 15 ns ty Bn or CE to RCOB 1 12 ns tpHL Bn or CE to RCOB 1 15 ns Notes: 1. Maximum allowable relative shift equals 50mVV. 2. All specifications valid for radiation dose $ 1E6 rads(Si). Rad-Hard MSI Logic 160