WP3DP3BT/BD-P22 Phototransistor DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES z z z Mechanically and spectrally matched to the infrared emitting LED lamp Black diffused lens Daylight filter RoHS compliant tia l z APPLICATIONS z z z en z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology C on fid Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C 260 C Power Dissipation at (or below) 25C Free Air Temperature Lead Soldering Temperature(>5mm for 5sec) Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity - Ref JEDEC/JESD625-A and JEDEC/J-STD-033. (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.4 Date: 12/22/2017 Page 1 / 4 WP3DP3BT/BD-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25C Parameter Symbol Min. Typ. Max. Units Test Conditions VBR CEO 30 - - V IC = 100uA Ee = 0mW/cm2 Emitter-to-Collector Breakdown Voltage VBR ECO 5 - - V IE = 100uA Ee = 0mW/cm2 Collector-to-Emitter Saturation Voltage VCE (SAT) - - 0.8 V IC = 2mA Ee = 20mW/cm2 Collector Dark Current ICEO - - 100 nA VCE = 10V Ee = 0mW/cm2 Rise Time(10% to 90%) TR - 15 - S Fall Time(90% to 10%) TF - 15 - S I(ON) 0.1 0.2 - mA VCE = 5V Ee = 1mW/cm2 = 940nm Range of spectral bandwidth 0.1 670 - 1070 nm - Wavelength of peak sensitivity p en On State Collector Current 21/2 940 - nm - - 50 - deg - RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 60% 40% 20% 0% 600 700 800 900 Wavelength (nm) 1000 1100 -15 Ta = 25 C 0 -30 1200 15 30 -45 Relative sensitivity 80% Ta = 25 C 45 60 -60 75 -75 -90 1.0 0.5 0.0 90 1.0 0.5 C Relative spectral sensitivity (a. u.) RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH 100% VCE = 5V IC = 1mA RL = 1000 - on fid Angle of half sensitivity tia l Collector-to-Emitter Breakdown Voltage TECHNICAL DATA PHOTOTRANSISTOR Collector Current vs. Irradiance Collector Current vs. Collector-Emitter Voltage 0.3 Collector current (mA) VCE=5V Ta = 25 C 1 0.1 0.01 0.01 0.25 160 Ta = 25 C 0.2 0.15 Ee = 1mW/cm 2 0.1 0.05 Ee = 0.5mW/cm 2 Ee = 0.25mW/cm 2 0 0.1 1 10 2 Irradiance Ee (mW/cm ) 0 1 2 3 4 5 Collector-emitter voltage VCE (V) (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.4 Date: 12/22/2017 Relative collector current (%) 10 Collector current Ic (mA) Relative Collector Current vs. Ambient Temperature VCE=5V 2 Ee=1mW/cm 140 120 100 80 60 40 20 0 0 20 40 60 80 Ambient temperature (C) 100 Page 2 / 4 WP3DP3BT/BD-P22 TECHNICAL DATA PHOTOTRANSISTOR Collector Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 125 100 Collector power dissipation Pd (mW) VCE = 20V Ee = 0 10 1 10 Collector dark current (nA) 1000 100 75 50 25 0 0.1 0 25 50 75 100 Ambient temperature (C) Ta = 25 C 1 0.1 0.01 0 20 40 60 80 Ambient temperature (C) 100 0 5 10 15 20 25 30 Collector-emitter voltage VCE (V) tia l Collector dark current (nA) Collector Dark Current vs. Collector-Emitter Voltage on fid en RECOMMENDED WAVE SOLDERING PROFILE Notes: 1. Recommend pre-heat temperature of 105C or less (as measured with a thermocouple attached to the LED pins) prior to immersion in the solder wave with a maximum solder bath temperature of 260C 2. Peak wave soldering temperature between 245C ~ 255C for 3 sec (5 sec max). 3. Do not apply stress to the epoxy resin while the temperature is above 85C. 4. Fixtures should not incur stress on the component when mounting and during soldering process. 5. SAC 305 solder alloy is recommended. 6. No more than one wave soldering pass. C PACKING & LABEL SPECIFICATIONS (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.4 Date: 12/22/2017 Page 3 / 4 WP3DP3BT/BD-P22 PRECAUTIONS Storage conditions 1. Avoid continued exposure to the condensing moisture environment and keep the product away from rapid transitions in ambient temperature. 2. LEDs should be stored with temperature 30C and relative humidity < 60%. 3. Product in the original sealed package is recommended to be assembled within 72 hours of opening. Product in opened package for more than a week should be baked for 30 (+10/-0) hours at 85 ~ 100C. LED Mounting Method tia l 1. The lead pitch of the LED must match the pitch of the mounting holes on the PCB during component placement. Lead-forming may be required to insure the lead pitch matches the hole pitch. Refer to the figure below for proper lead forming procedures. Note 1-3: Do not route PCB trace in the contact area between the leadframe and the PCB to prevent short-circuits. " " Correct mounting method "x " Incorrect mounting method on fid en 2. When soldering wires to the LED, each wire joint should be separately insulated with heat-shrink tube to prevent short-circuit contact. Do not bundle both wires in one heat shrink tube to avoid pinching the LED leads. Pinching stress on the LED leads may damage the internal structures and cause failure. 3. Use stand-offs (Fig.1) or spacers (Fig.2) to securely position the LED above the PCB. 4. Maintain a minimum of 3mm clearance between the base of the LED lens and the first lead bend (Fig. 3 ,Fig. 4). 5. During lead forming, use tools or jigs to hold the leads securely so that the bending force will not be transmitted to the LED lens and its internal structures. Do not perform lead forming once the component has been mounted onto the PCB. (Fig. 5 ) C Lead Forming Procedures 1. Do not bend the leads more than twice. (Fig. 6 ) 2. During soldering, component covers and holders should leave clearance to avoid placing damaging stress on the LED during soldering. (Fig. 7) 3. The tip of the soldering iron should never touch the lens epoxy. 4. Through-hole LEDs are incompatible with reflow soldering. 5. If the LED will undergo multiple soldering passes or face other processes where the part may be subjected to intense heat, please check with Kingbright for compatibility. PRECAUTIONARY NOTES 1. The information included in this document reflects representative usage scenarios and is intended for technical reference only. 2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to the latest datasheet for the updated specifications. 3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues. 4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance. 5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright. 6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.4 Date: 12/22/2017 Page 4 / 4