STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1.1 - 6A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP7NC70Z/FP 700V < 1.38 6A STB7NC70Z-1 700V < 1.38 6A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 1 TO-220 TO-220FP 1 2 3 I2PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)7NC70Z(-1) VDS VDGR VGS Unit STP7NC70ZFP Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 k) 700 V Gate- source Voltage 25 V ID Drain Current (continuos) at TC = 25C 6 6(*) A ID Drain Current (continuos) at TC = 100C 3.7 3.7(*) A Drain Current (pulsed) 24 24 A Total Dissipation at TC = 25C 125 40 W 1 0.32 W/C IDM (1) PTOT Derating Factor IGS VESD(G-S) 50 Gate-source Current mA Gate source ESD(HBM-C=100pF, R=15K) 3 KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (*)Pulse width limited by safe operating area July 2000 -- 2000 V -65 to 150 C 150 C (1)ISD 6A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX (2).Limited only by maximum temperature allowed This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 STP7NC70Z/FP/STP7NC70Z-1 THERMAL DATA TO-220 / I2PAK TO-220FP 1 3.13 C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 C/W Maximum Lead Temperature For Soldering Purpose 300 C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 238 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS BVDSS/TJ Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 A, VGS = 0 Breakdown Voltage Temp. Coefficient ID = 1 mA, VGS = 0 Min. Typ. Max. 700 Unit V 0.8 V/C IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 A VDS = Max Rating, TC = 125 C 50 A IGSS Gate-body Leakage Current (VDS = 0) VGS = 20V 10 A Max. Unit ON (1) Symbol VGS(th) Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250A R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 5 V 1.1 1.38 6 A DYNAMIC Symbol gfs (1) 2/11 Parameter Forward Transconductance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7 S 1840 pF 140 pF 18 pF STP7NC70Z/FP/STP7NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. VDD = 350 V, ID = 3.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) Typ. Unit 24 ns 8 ns 47 VDD = 560V, I D = 7A, VGS = 10V Max. 66 nC 11 nC 19 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Condit ions Min. VDD = 560V, ID = 7 A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 11 ns 10 ns 19 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage 1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 6 A, VGS = 0 ISD = 7A, di/dt = 100A/s, VDD = 50V, Tj = 150C (see test circuit, Figure 5) 575 ns 5.8 C 20 A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Gate-Source Breakdown Voltage Igs= 1mA (Open Drain) T Voltage Thermal Coefficient T=25C Note(3) 1.3 10-4/C Rz Dynamic Resistance ID = 50 mA, VGS = 0 90 BVGSO 25 V Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. VBV = T (25-T) BVGSO(25) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 3/11 STP7NC70Z/FP/STP7NC70Z-1 Safe Operating Area For TO-220 / I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220 / I2PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/11 STP7NC70Z/FP/STP7NC70Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STP7NC70Z/FP/STP7NC70Z-1 Source-drain Diode Forward Characteristics 6/11 STP7NC70Z/FP/STP7NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP7NC70Z/FP/STP7NC70Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/11 L4 P011C STP7NC70Z/FP/STP7NC70Z-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F F1 L7 F2 H G G1 1 2 3 L2 L4 9/11 STP7NC70Z/FP/STP7NC70Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 10/11 STP7NC70Z/FP/STP7NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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