1/11July 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP7NC70Z - STP7NC70ZFP
STB7NC70Z-1
N-CHANNEL 700V - 1.1
Ω
- 6A TO-220/TO-220FP/I2PAK
Zener-Protected PowerMESHIII MOSFET
■TYPICAL RDS(on) = 1.1Ω
■EXTREMELY HIGHdv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
■100% AVALANCHE TESTED
■VERY LOW GATE INPUT RESISTANCE
■GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAYPower
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limitedby safe operating area
TYPE VDSS RDS(on) ID
STP7NC70Z/FP 700V < 1.38Ω6A
STB7NC70Z-1 700V < 1.38Ω6A
Symbol Parameter Value Unit
STP(B)7NC70Z(-1) STP7NC70ZFP
VDS Drain-source Voltage (VGS =0) 700 V
VDGR Drain-gate Voltage (RGS =20kΩ)700 V
VGS Gate- source Voltage ±25 V
IDDrain Current (continuos) at TC=25°C6 6(*) A
IDDrain Current (continuos) at TC= 100°C3.7 3.7(*) A
IDM (1) Drain Current (pulsed) 24 24 A
PTOT Total Dissipation at TC=25°C125 40 W
Derating Factor 1 0.32 W/°C
IGS Gate-source Current ±50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
VISO Insulation Withstand Voltage (DC) -- 2000 V
Tstg Storage Temperature –65 to 150 °C
TjMax. Operating Junction Temperature 150 °C
(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤V(BR)DSS,T
j≤T
JMAX
(2).Limited only by maximum temperature allowed
TO-220 123
TO-220FP
123
I2PAK
(Tabless TO-220)
STP7NC70Z/FP/STP7NC70Z-1
2/11
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220 / I2PAK TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 6A
E
AS Single Pulse Avalanche Energy
(starting Tj=25°C, ID=I
AR,V
DD =50V) 238 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µA, VGS =0 700 V
∆BVDSS/∆TJBreakdown Voltage Temp.
Coefficient ID=1mA,V
GS =0 0.8 V/°C
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS = Max Rating 1µA
VDS = Max Rating, TC= 125 °C50µA
I
GSS Gate-body Leakage
Current (VDS =0) V
GS =±20V ±10 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250µA 345V
R
DS(on) Static Drain-source On
Resistance VGS = 10V, ID= 3.5 A 1.1 1.38 Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max,
VGS =10V 6A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS >I
D(on) xR
DS(on)max,
ID= 3.5A 7S
C
iss Input Capacitance
VDS = 25V, f = 1 MHz, VGS =0
1840 pF
Coss Output Capacitance 140 pF
Crss Reverse Transfer
Capacitance 18 pF
3/11
STP7NC70Z/FP/STP7NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENERDIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV =αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be appliedfrom gate to souce.In this respect the 25V Zener voltageis appropiate to achieve an efficient
and cost-effectiveintervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time
Rise Time
VDD = 350 V, ID= 3.5 A
RG= 4.7ΩVGS = 10V
(see test circuit, Figure 3)
24 ns
tr8ns
Q
g
Total Gate Charge VDD = 560V, ID= 7A,
VGS = 10V
47 66 nC
Qgs Gate-Source Charge 11 nC
Qgd Gate-Drain Charge 19 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 560V, ID=7A,
R
G=4.7Ω, VGS = 10V
(see test circuit, Figure 5)
11 ns
tfFall Time 10 ns
tcCross-over Time 19 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6 A
ISDM (2) Source-drain Current (pulsed) 24 A
VSD (1) Forward On Voltage ISD = 6 A, VGS =0 1.6 V
trr Reverse Recovery Time ISD = 7A, di/dt = 100A/µs,
VDD = 50V, Tj= 150°C
(see test circuit, Figure 5)
575 ns
Qrr Reverse Recovery Charge 5.8 µC
IRRM Reverse Recovery Current 20 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown
Voltage Igs=±1mA (Open Drain) 25 V
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C
Rz Dynamic Resistance ID= 50 mA, VGS =0 90 Ω
STP7NC70Z/FP/STP7NC70Z-1
4/11
Transfer Characteristics
Thermal Impedance For TO-220 / I2PAK
Safe Operating Area For TO-220 / I2PAK Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
5/11
STP7NC70Z/FP/STP7NC70Z-1
Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
STP7NC70Z/FP/STP7NC70Z-1
6/11
Source-drain Diode Forward Characteristics
7/11
STP7NC70Z/FP/STP7NC70Z-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
STP7NC70Z/FP/STP7NC70Z-1
8/11
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/11
STP7NC70Z/FP/STP7NC70Z-1
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP7NC70Z/FP/STP7NC70Z-1
10/11
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
L
L1
B2
B
D
EA
C2
CA1
L2
e
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
11/11
STP7NC70Z/FP/STP7NC70Z-1
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subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
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