HEXFET® Power MOSFET
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
VDSS = 20V
RDS(on) = 0.045Ω
lUltra Low On-Resistance
lN-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
lLead-Free
lRoHS Compliant, Halogen-Free
Description
Micro3™
D
S
G
3
1
2
IRLML2502PbF
Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
IDM Pulsed Drain Current 33
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Form Quantity
IRLML2502TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML2502TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient75 100 °C/W
Thermal Resistance
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.035 0.045 Ω
––– 0.050 0.080
V
GS(th)
Gate Threshold Voltage 0.60 ––– 1.2 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C
gfs Forward Transconductance 5.8 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 25
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 8.0 12
Q
gs
Gate-to-Source Charge ––– 1.8 2.7
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.7 2.6
t
d(on)
Turn-On Delay Time ––– 7.5 –––
t
r
Rise Time ––– 10 –––
t
d(off)
Turn-Off Delay Time ––– 54 –––
t
f
Fall Time ––– 26 –––
C
iss
Input Capacitance ––– 740 –––
C
oss
Output Capacitance ––– 90 –––
C
rss
Reverse Transfer Capacitance ––– 66 –––
Source-Drain Rating and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 8.6 13 nC
MOSFET symbol
nA
ns
A
pF
nC V
DS
= 10V
V
GS
= 12V
V
GS
= -12V
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 4.2A
d
––– ––– 33
––– ––– 1.3
Conditions
R
D
= 10Ω
d
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 1.3A
di/dt = 100A/μs
d
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
d
showing the
integral reverse
p-n junction diode.
R
G
= 6Ω
V
DS
= 10V, I
D
= 4.0A
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
μA
V
GS
= 5.0V
d
I
D
= 1.0A
V
GS
= 0V
V
DS
= 15V
I
D
= 4.0A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 2.5V, I
D
= 3.6A
d
V
DS
= 16V, V
GS
= 0V
V
DD
= 10V
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
4.0A
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
10
100
2.0 2.4 2.8 3.2 3.6 4.0
V = 15V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 4 8 12 16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.0A
V = 10V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRLML2502PbF
Fig 12. On-Resistance Vs. Drain Current
Fig 11. On-Resistance Vs. Gate Voltage
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = 4.0A
0 10203040
iD , Drain Current ( A )
0.00
0.10
0.20
0.30
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS = 2.5V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
0.7
0.9
1.1
1.3
VGS(th), Gate threshold Voltage (V)
ID = 50μA
ID = 250μA
Fig 13. Threshold Voltage Vs. Temperature
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 BS C
MIL L IME T E R S
MI N
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B S C
DIMENS IONS
INCHES
b0.30
bbb
0.15
.008
ccc .006
0.25 B S CL1
L 0.40 0.60
.0118 B S C
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S U RF 0
3X L
L1
H4
7
2.10
e1 1.90 BS C .075 BSC
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
RECOMMENDED F OOT PR INT
3X
3X
NOT ES
1. DIMENS IONING AND T OL E R ANCING PE R ASME Y14.5M-1994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 D AT U M A AND B T O B E DE T E R MI N E D AT DAT U M P L ANE H .
6 D I ME NS I ON S D AND E 1 AR E ME AS UR ED AT DAT U M P L ANE H .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMET ER.
7 DIMENS ION L IS T HE LEAD LENGTH FOR SOLDERING TO A S UBS T RATE.
8. OUT LINE CONF ORMS T O JE DE C OUT LI NE T O-23 6AB.
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52 Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2502PbF
MS L 1
(per JEDE C
J-S T D-020D
††
)
RoHS c ompliant
Yes
Qualification information
†
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
•
Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/24/2014
