Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
050-5503 Rev B
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
400
37 0.12
25
250
±100
24
APT4012BVR
400
37
148
±30
±40
370
2.96
-55 to 150
300
37
30
1300
APT4012BVR
400V 37A 0.120Ω
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-247 Package
G
D
S
POWER MOS V®
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 55792 1515 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
Symbol
IS
ISM
VSD
t rr
Q rr
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6Ω
MIN TYP MAX
4500 5400
690 970
290 435
195 290
25 37
90 135
14 28
17 34
55 95
12 24
UNIT
pF
nC
ns
APT4012BVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5503 Rev B
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN TYP MAX
37
148
1.3
450
7.4
1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471
temperature. 4Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 37A
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN TYP MAX
0.34
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.4
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 40 80 120 160 200 0 4 8 12 16 20
02468 020406080100
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
APT4012BVR
ID = 0.5 ID [Cont.]
VGS = 10V
100
80
60
40
20
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
80
60
40
20
0
100
80
60
40
20
0
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5503 Rev B
VGS=10V
VGS=20V
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V & 15V
5.5V
4.5V
5V
VGS=15V
6V
VGS=10V
6.5V
7V
5.5V
4.5V
5V
6V
6.5V
7V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 5 10 50 100 400 .01 .1 1 10 50
0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4
APT4012BVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
ID = ID [Cont.]
15,000
10,000
5,000
1,000
500
100
100
50
10
5
1
050-5503 Rev B
OPERATION HERE
LIMITED BY RDS (ON)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
TO-247 Package Outline
Crss
Coss
Ciss
VDS=200V
VDS=320V
VDS=80V
TJ =+150°C TJ =+25°C
10µS
1mS
10mS
100mS
DC
100µS
