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Dim Min Max Min Max
A 14.9 15.10 0.587 0.595
B — 10.50 — 0.413
C 2.62 2.87 0.103 0.113
D 3.56 4.06 0.140 0.160
E 13.46 14.22 0.530 0.560
F 0.68 0.94 0.027 0.037
G 3.74Ø 3.91Ø 0.147Ø
Ø
0.154Ø
H 5.84 6.86 0.230 0.270
I 4.44 4.70 0.175 0.185
J 2.54 2.79 0.100 0.110
K 0.35 0.64 0.014 0.025
L 1.14 1.40 0.045 0.055
P 4.95 5.20 0.195 0.205
In mm In inch
TO-220A
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0
2
4
6
8
0 25 50 75 100 125 150 175
I , AVERAGE FORWARD CURRENT
(AV)
T,CASE TEMPERATURE ( C)
Fig.1,TypicalForwardCurrentDeratingCurve
C°
0.1
1
10
100
1000
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3, Typical Instantaneous Forward Characteristics
F
T = 25 C
Pulse Width = 300 s
1% Duty Cycle
J°µ
0
50
100
150
200
250
300
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
Fsm
NUMBER OF CYCLES AT 60Hz
Fig. 2 Max Non-Repetitive Peak Surge Current
8.3ms Single Half Sine-Wave
JEDEC Method
1.0
10
100
1000
1.0 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j°
50V DC
Approx
50 NI (Non-inductive)Ω10 NIΩ
1.0
NI
ΩOscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Settimebasefor5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2.RiseTime=10nsmax.InputImpedance=50.
Ω
Ω
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
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Data Sheet 2711, Rev. -
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any oth er cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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