SI4410DYTR - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage 30 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±10

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±8.0 A

IDM Pulsed Drain Current ±50

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

EAS Single Pulse Avalanche Energy400 mJ

VGS Gate-to-Source Voltage ± 20 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

lN-Channel MOSFET

lLow On-Resistance

lLow Gate Charge

lSurface Mount

lLogic Level Drive

11/22/99

Si4410DY

HEXFET® Power MOSFET

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

This N-channel HEXFET® Power MOSFET is produced

using International Rectifier's advanced HEXFET power

MOSFET technology. The low on-resistance and low gate

charge inherent to this technology make this device ideal

for low voltage or battery driven power conversion

applications

The SO-8 package with copper leadframe offers enhanced

thermal characteristics that allow power dissipation of

greater that 800mW in typical board mount applications.

VDSS = 30V

RDS(on) = 0.0135 Ω

Description

Top View

8

1

2

3

45

6

7

D

DG

S

A

S

A

Absolute Maximum Ratings

W

www.irf.com 1

PD - 91853C

SO-8

Si4410DY

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Diode Conduction)showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– 0.7 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V 

trr Reverse Recovery Time ––– 50 80 ns TJ = 25°C, IF = 2.3A

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

––– –––

––– ––– 50

2.3 A

S

D

G

 When mounted on FR4 Board, t ≤10 sec

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

––– 0.0100.0135 VGS = 10V, ID = 10A 

––– 0.015 0.020 VGS = 4.5V, ID = 5.0A 

VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs Forward Transconductance ––– 35 ––– S VDS = 15V, ID = 10A

––– ––– 1.0 VDS = 30V, VGS = 0V

––– ––– 25 VDS = 30V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge –– – 30 45 ID = 10A

Qgs Gate-to-Source Charge ––– 5 .4 – –– nC VDS = 15V

Qgd Gate-to-Drain ("Miller") Charge ––– 6 .5 –– – VGS = 10V, See Fig. 10 

td(on) Turn-On Delay Time ––– 11 ––– VDD = 25V

trRise Time ––– 7.7 ––– ID = 1.0A

td(off) Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω

tfFall Time ––– 44 ––– RD = 25Ω, 

Ciss Input Capacitance ––– 1585 ––– VGS = 0V

Coss Output Capacitance ––– 739 ––– pF VDS = 15V

Crss Reverse Transfer Capacitance ––– 106 ––– ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

nA

ns

 Starting TJ = 25°C, L = 8.0mH

RG = 25Ω, IAS = 10A. (See Figure 15)

ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Si4410DY

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

10

100

1000

0.1 1 10 100

20

µ

s PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

10

100

1000

0.1 1 10 100

20

µ

s PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Volta

g

e (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

11A

10

100

1000

4 8 12 16

T = 25°C

J

GS

V , G a te-to-Sou rce V olta

g

e (V)

D

I , Dra in -to-Sou rc e Cu rrent (A)

A

V = 2 5 V

20µ s PU LSE WID TH

DS

T = 150°C

T = -55°C

J

10A

Si4410DY

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.4 0.5 0.6 0.7 0.8 0.9 1.0

V ,Source-to-Drain Volta

g

e (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

1

10

100

1000

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

T = 150 C

= 25 C

°°

J

C

V , Drain-to-Source Volta

g

e (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

010 20 30 40 50

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D10A

V = 15V

DS

V = 24V

DS

1 10 100

0

400

800

1200

1600

2000

2400

V , Drain-to-Source Volta

g

e (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss

g

s

g

d , ds

rss

g

d

oss ds

g

d

Ciss

Coss

Crss

Si4410DY

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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

0.01

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10. Typical Power Vs. Time

0

20

40

60

80

100

0.01 0.1 1 10 100

A

P ower ( W)

Tim e (sec )

Si4410DY

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Fig 12. Typical On-Resistance Vs. Drain

Current Fig 13. Typical On-Resistance Vs. Gate

Voltage

0.00

0.04

0.08

0.12

0.16

0.20

0 1020304050

A

I , D rain C urrent

(

A

)

D

R , D rain-to-S ource O n Re sist ance

DS(on)

(Ω)

V = 10V

GS

V = 4.5V

GS

0.00

0.01

0.02

0.03

345678910

A

R , Drain-to-S ource O n Re sis tanc e

DS(on)

(Ω)

GS

V , Gate - to-So urce V olta

g

e

(

V

)

I = 1 0 A

D

Fig 14. Typical Threshold Voltage Vs.Temperature

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

J

T , J unctio n T emp e ra tu re

(

°C

)

A

GS(th)

V , Varian ce ( V )

I =2 50µA

D

Fig 15. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

0

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

4.5A

8.0A

10A

Si4410DY

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SO-8 Package Outline

SO-8 Pa r t Mar king Information

K x 45°

C

8X

L

8X

θ

H

0.25 (.010) M A M

A

0.10 (.004)

B 8X

0.25 (.010) M C A S B S

- C -

6X

e

- B -

D

E

- A -

8 7 6 5

1 2 3 4

5

6

5

RECOMMENDED FOOTPRINT

0.72 (.028 )

8X

1.78 (.070)

8X

6.46 ( .255 )

1.27 ( .050 )

3X

DIM INCHES MILLIMETERS

MIN MAX MIN MAX

A .0532 .0688 1.35 1.75

A1 .0040 .0098 0.10 0.25

B .014 .018 0.36 0.46

C .0075 .0098 0.19 0.25

D .189 .196 4.80 4.98

E .150 .157 3.81 3.99

e .050 BASIC 1.27 BASIC

e1 .025 BASIC 0.635 BASIC

H .2284 .2440 5.80 6.20

K .011 .019 0.28 0.48

L 0.16 .050 0.41 1.27

θ

0° 8° 0° 8°

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

5

6

A1

e1

Si4410DY

8www.irf.com

Dimensions are shown in millimeters (inches)

SO-8 Tape & Reel Information

33 0.0 0

(12.992)

MAX.

14 .4 0 ( .5 66 )

12 .4 0 ( .4 88 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. O UTL INE C ON FO RM S TO EIA -481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

1 2.3 ( .48 4 )

1 1.7 ( .46 1 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : M ILLIM ETER.

2. A LL D IM EN SION S A RE SH O WN IN MILLIM ETER S(INC H ES).

3. OUTL INE C O N FO R M S TO EIA -481 & EIA-541.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

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Data and specifications subject to change without notice. 11/99