© 2006 Microchip Technology Inc. DS21662E-page 1
TC2014/2015/2185
Features
• Low Supply Current: 80 µA (Max)
• Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
• High-Output Voltage Accuracy: ±0.4% (Typ.)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Fast Shutdown Response Time: 60 µsec (Typ.)
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Wide Operating Temperature Range:
-40°C to +125°C
• Standard Output Voltage Options:
-1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0V
Applications
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Related Literature
• Application Notes: AN765, AN766, AN776 and
AN792
Package Type
General Description
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar Low
Drop-out Regulators (LDOs), such as the LP2980.
Total supply current is typically 55 µA; 20 to 60 times
lower than in bipolar regulators.
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. These devices also
incorporate overcurrent and overtemperature
protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have maximum output
currents of 50 mA, 100 mA and 150 mA, respectively.
For higher-output current versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (IOUT = 300 mA) data sheets.
Typical Application
TC2014
TC2015
TC2185
13
4
5
2
Bypass
GND
VOUT
VIN SHDN
5-Pin SOT-23A
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
TC2014
TC2015
TC2185
VIN
1
2
34
5
VIN VOUT
Bypass
SHDN
GND
VOUT
1µF 1µF
++
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
TC2014/2015/2185
DS21662E-page 2 © 2006 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ................................................................... 7.0V
Output Voltage ....................................... (– 0.3) to (VIN + 0.3)
Operating Temperature ......................... – 40°C < TJ < 125°C
Storage Temperature.................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage VIN 2.7 —6.0 VNote 1
Maximum Output
Current
IOUTMAX 50 ——mATC2014
100 —— TC2015
150 —— TC2185
Output Voltage VOUT VR – 2.0% VR ± 0.4% VR + 2.0% VNote 2
VOUT Temperature
Coefficient
TCVOUT — 20 — ppm/°C Note 3
—40 —
Line Regulation ΔVOUT/ΔVIN —0.050.5 %(V
R + 1V) < VIN < 6V
Load Regulation
(Note 4)
ΔVOUT/VOUT -1.0 0.33 +1.0 %TC2014;TC2015:I
L = 0.1 mA to IOUTMAX
-2.0 0.43 +2.0 TC2185:I
L = 0.1 mA to IOUTMAX (Note 4)
Dropout Voltage VIN – VOUT —2—mVNote 5 IL = 100 µA
—4570 IL = 50 mA
—90140 TC2015; TC2185 IL = 100 mA
— 140 210 TC2185 IL = 150 mA
Supply Current IIN —5580 µA SHDN = VIH, IL = 0
Shutdown Supply
Current
IINSD — 0.05 0.5 µA SHDN = 0V
Power Supply
Rejection Ratio
PSRR — 55 — dB F ≤ 1 kHz, Cbypass = 0.01 µF
Output Short Circuit
Current
IOUTSC — 160 300 mA VOUT = 0V
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT
.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
TCVOUT
VOUTMAX VOUTMIN
–()10 6–
×
VOUT TΔ×
----------------------------------------------------------------------------=
© 2006 Microchip Technology Inc. DS21662E-page 3
TC2014/2015/2185
TEMPERATURE CHARACTERISTICS
Thermal Regulation ΔVOUT/ΔPD—0.04— V/WNote 6, Note 7
Thermal Shutdown Die
Temperature
TSD — 160 — °C
Output Noise eN — 200 — nV/√Hz IL = IOUTMAX, F = 10 kHz
470 pF from Bypass to GND
Response Time
(from Shutdown Mode)
(Note 8)
TR—60—µsV
IN = 4V, IL = 30 mA,
CIN = 1 µF, COUT = 10 µF
SHDN Input
SHDN Input High
Threshold
VIH 60 ——%V
IN VIN = 2.5V to 6.0V
SHDN Input Low
Threshold
VIL ——15 %VIN VIN = 2.5V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT
.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.
TCVOUT
VOUTMAX VOUTMIN
–()10 6–
×
VOUT TΔ×
----------------------------------------------------------------------------=
Electrical Specifications: Unless otherwise noted, VDD = +2.7V to +6.0V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range TA-40 — +125 °C
Operating Temperature Range TA-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23 θJA — 255 — °C/W
TC2014/2015/2185
DS21662E-page 4 © 2006 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-1: Supply Current vs. Junction
Temperature.
FIGURE 2-2: Load Regulation vs. Supply
Voltage.
FIGURE 2-3: Output Voltage vs. Junction
Temperature.
FIGURE 2-4: Output Voltage vs. Junction
Temperature.
FIGURE 2-5: Output Voltage vs. Supply
Voltage.
FIGURE 2-6: Dropout Voltage vs.
Junction Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
45.0
48.0
51.0
54.0
57.0
60.0
63.0
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
IDD (µA)
VR = 1.8V
COUT = 3.3 µF
VIN = 2.8V
VIN = 6.0V
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6
Supply Voltage (V)
Load Regulation (%)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
1.790
1.795
1.800
1.805
1.810
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VIN = 6.0V
VIN = 2.8V
VR = 1.8V
COUT = 3.3 µF
IL = 0.1 mA
1.785
1.790
1.795
1.800
1.805
1.810
1.815
1.820
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
VIN = 2.8V
VIN = 6.0V
1.785
1.79
1.795
1.8
1.805
1.81
1.815
1.82
2.83.23.644.44.85.25.66
Supply Voltage (V)
Output Voltage (V)
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 1.8V
COUT = 3.3 μF
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
VIN(min)
!
2.7V
© 2006 Microchip Technology Inc. DS21662E-page 5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-7: Supply Current vs. Junction
Temperature.
FIGURE 2-8: Load Regulation vs. Supply
Voltage.
FIGURE 2-9: Output Voltage vs. Junction
Temperature.
FIGURE 2-10: Output Voltage vs. Junction
Temperature.
FIGURE 2-11: Output Voltage vs. Supply
Voltage.
FIGURE 2-12: Dropout Voltage vs.
Junction Temperature.
44.0
46.0
48.0
50.0
52.0
54.0
56.0
58.0
60.0
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
IDD(µA)
VR = 2.7V
COUT = 3.3 µF
VIN = 2.8V
VIN = 6.0V
-0.5
-0.3
-0.1
0.1
0.3
0.5
3.7 4 4.3 4.6 4.9 5.2 5.5 5.8
Supply Voltage (V)
Load Regulation (%)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
2.670
2.672
2.674
2.676
2.678
2.680
2.682
2.684
2.686
2.688
2.690
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VIN = 6.0V
VIN = 3.7V
VR = 2.7V
COUT = 3.3 µF
IL = 0.1 mA
2.665
2.670
2.675
2.680
2.685
2.690
2.695
2.700
2.705
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
VIN = 3.7V
VIN = 6.0V
2.665
2.67
2.675
2.68
2.685
2.69
2.695
2.7
2.705
3.7 4 4.3 4.6 4.9 5.2 5.5 5.8
Supply Voltage (V)
Output Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +25°C
TA = +125°C
TA = -45°C
0.000
0.040
0.080
0.120
0.160
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 2.7V
COUT = 3.3 µF
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA
TC2014/2015/2185
DS21662E-page 6 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-13: Supply Current vs. Junction
Temperature.
FIGURE 2-14: Output Voltage vs. Junction
Temperature.
FIGURE 2-15: Load Regulation vs.
Junction Temperature.
FIGURE 2-16: Dropout Voltage vs.
Junction Temperature.
FIGURE 2-17: Load Transient Response.
(COUT = 1 µF).
FIGURE 2-18: Load Transient Response.
(COUT = 10 µF).
45
48
51
54
57
60
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
IDD (µA)
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
4.93
4.94
4.95
4.96
4.97
4.98
4.99
5.00
5.01
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Output Voltage (V)
IL = 100 mA
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
IL = 150 mA
IL = 0.1 mA
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Load Regulation (%)
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0 V
IL = 50 mA
IL = 100 mA
IL = 150 mA
0.00
0.02
0.04
0.06
0.08
0.10
0.12
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Dropout Voltage (V)
VR = 5.0V
COUT = 3.3 µF
IL = 50 mA
IL = 100 mA
IL = 150 mA
150mA
Load
100mA
Load Current
100mV/DIV
VIN = 3.8V
VOUT = 2.8V
CIN = 1 µF Ceramic
COUT = 1 µF Ceramic
Frequency = 1 kHz
VOUT
150mA
Load
100mA
Load Current
100mV / DIV
VIN = 3.0V
VOUT = 2.8V
CIN = 1 μF Ceramic
COUT = 10 μF Ceramic
Frequency = 10 kHz
VOUT
© 2006 Microchip Technology Inc. DS21662E-page 7
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-19: Line Transient Response.
(COUT = 1 µF).
FIGURE 2-20: Load Transient Response in
Dropout. (COUT = 10 µF).
FIGURE 2-21: Shutdown Delay Time.
FIGURE 2-22: Wake-Up Response.
FIGURE 2-23: PSRR vs. Frequency
(COUT = 1 µF Ceramic).
FIGURE 2-24: PSRR vs. Frequency
(COUT = 10 µF Ceramic).
100mA
150mA
V
OUT
100mV/DIV
V
IN
= 3.105V
V
OUT
= 3.006V
C
IN
= 1 μF Ceramic
C
OUT
= 10 μF Ceramic
R
LOAD
= 20 Ω
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 1µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 50 mA
IOUT = 150 mA
IOUT = 100 mA
10 100 1k 10k 100k 1M
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 150 mA
IOUT = 100 mA
10 100 1k 10k 100k 1M
TC2014/2015/2185
DS21662E-page 8 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
FIGURE 2-25: PSRR vs. Frequency
(COUT = 10 µF Tantalum).
FIGURE 2-26: Output Noise vs. Frequency.
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Power Supply Ripple Rejection
(dB)
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Tantalum
IOUT = 150 mA
CBYPASS = 0.01 µF
CBYPASS = 0 µF
10 100 1k 10k 100k 1M 0.001
0.010
0.100
1.000
10.000
10 100 1000 10000 100000 100000
0
Frequency (Hz)
Noise (µV/
Hz)
VIN = 4.0V
VOUTDC = 3.0V
IOUT = 100 µA
CBYPASS = 470 pF
COUT = 10 µF
COUT = 1 µF
10
100 1k 10k 100k 1M
1
0.1
0.10
© 2006 Microchip Technology Inc. DS21662E-page 9
TC2014/2015/2185
3.0 PIN DESCRIPTIONS
The descriptions of the pins are described in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Unregulated Supply Input (VIN)
Connect the unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is neces-
sary for proper operation. A 1 µF capacitor, connected
from VIN to ground, is recommended for most
applications.
3.2 Ground Terminal (GND)
Connect the unregulated input supply ground return to
GND. Also connect one side of the 1 µF typical input
decoupling capacitor close to this pin and one side of
the output capacitor COUT to this pin.
3.3 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.5 µA (max).
3.4 Reference Bypass Input (Bypass)
Connecting a low-value ceramic capacitor to Bypass
will further reduce output voltage noise and improve the
Power Supply Ripple Rejection (PSRR) performance
of the LDO. Typical values from 470 pF to 0.01 µF are
suggested. While smaller and larger values can be
used, these affect the speed at which the LDO output
voltage rises when input power is applied. The larger
the bypass capacitor, the slower the output voltage will
rise.
3.5 Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also con-
nect one side of the LDO output de-coupling capacitor
as close as possible to the VOUT pin.
Pin No. Symbol Description
1V
IN Unregulated supply input
2 GND Ground terminal
3 SHDN Shutdown control input
4 Bypass Reference bypass input
5V
OUT Regulated voltage output
TC2014/2015/2185
DS21662E-page 10 © 2006 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC2014, TC2015 and TC2185 are precision fixed-
output voltage regulators (if an adjustable version is
needed, see the TC1070, TC1071 and TC1187
(DS21353) data sheet). Unlike bipolar regulators, the
TC2014, TC2015 and TC2185 supply current does not
increase with load current. In addition, the LDO’s out-
put voltage is stable using 1 µF of ceramic or tantalum
capacitance over the entire specified input voltage
range and output current range.
Figure 4-1 shows a typical application circuit. The reg-
ulator is enabled anytime the shutdown input (SHDN)
is at or above VIH, and disabled (shutdown) when
SHDN is at or below VIL. SHDN may be controlled by a
CMOS logic gate or I/O port of a microcontroller. If the
SHDN input is not required, it should be connected
directly to the input supply. While in shutdown, the
supply current decreases to 0.05 µA (typical) and VOUT
falls to zero volts.
FIGURE 4-1: Typical Application Circuit.
4.1 Bypass Input
A 0.01 µF ceramic capacitor, connected from the
Bypass input to ground, reduces noise present on the
internal reference, which, in turn, significantly reduces
output noise. If output noise is not a concern, this input
may be left unconnected. Larger capacitor values may
be used, but the result is a longer time period to rated
output voltage when power is initially applied.
4.2 Output Capacitor
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an Effective Series
Resistance (ESR) of 0.01Ω to 5Ω for VOUT ≥ 2.5V, and
0.05Ω. to 5Ω for VOUT < 2.5V. Ceramic, tantalum or alu-
minum electrolytic capacitors can be used. When using
ceramic capacitors, X5R and X7R dielectric material
are recommended due to their stable tolerance over
temperature. However, other dielectrics can be used as
long as the minimum output capacitance is maintained.
4.3 Input Capacitor
A 1 µF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the reg-
ulator and this AC filter capacitor, or if a battery is used
as the power source. Aluminum electrolytic or tantalum
capacitors can be used (since many aluminum electro-
lytic capacitors freeze at approximately -30°C, solid
tantalum are recommended for applications operating
below -25°C). When operating from sources other than
batteries, supply-noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
TC2014
TC2015
TC2185
VIN
1
2
34
5
VOUT
Bypass
SHDN
GND
VOUT
1µF 1µF
Battery
++ +
© 2006 Microchip Technology Inc. DS21662E-page 11
TC2014/2015/2185
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the regula-
tor off when the die temperature exceeds approxi-
mately 160°C. The regulator remains off until the die
temperature cools to approximatley 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is prima-
rily a function of input voltage, output voltage and
output current.
The following equation is used to calculate worst-case
power dissipation.
EQUATION 5-1:
The maximum allowable power dissipation (PDMAX) is
a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) (+125°C) and the thermal resistance from junc-
tion-to-air (θJA). The 5-Pin SOT-23A package has a θJA
of approximately 220°C/Watt when mounted on a
typical two-layer FR4 dielectric copper-clad PC board.
EQUATION 5-2:
The PD equation can be used in conjunction with the
PDMAX equation to ensure that regulator thermal
operation is within limits. For example:
Actual power dissipation:
Maximum allowable power dissipation:
In this example, the TC2014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW.
In a similar manner, the PD and PDMAX equations can
be used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θJA and, therefore,
increase the maximum allowable power dissipation
limit.
PDVINMAX VOUTMIN
–()ILMAX
≈
Where:
PD= Worst-case actual power dissipation
VINMAX = Maximum voltage on VIN
VOUTMIN = Minimum regulator output voltage
ILMAX = Maximum output (load) current
Where all terms are previously defined.
PDMAX
TJMAX TAMAX
–
θJA
---------------------------------------=
Given:
VINMAX = 3.0V +10%
VOUTMIN = 2.7V – 2.5%
ILOADMAX =40mA
TJMAX = +125°C
TAMAX = +55°C
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
PDVINMAX VOUTMIN
–()ILMAX
=
3.0 1.1
×
()2.7 0.975
×
()–[]40 10 3–
×
=
26.7mW=
PDMAX
TJMAX TAMAX
–
θJA
---------------------------------------=
125 55–
220
---------------------=
318mW=
TC2014/2015/2185
DS21662E-page 12 © 2006 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
c&drepresents part number code + temperature
range and voltage
erepresents year and 2-month period code
frepresents lot ID number
cdef
TABLE 6-1: PART NUMBER CODE AND
TEMPERATURE RANGE
(V) TC2014 TC2015 TC2185
1.8 PA RA UA
2.5 PB RB UB
2.6 PH RH UH
2.7 PC RC UC
2.8 PD RD UD
2.85 PE RE UE
3.0 PF RF UF
3.3 PG RG UG
5.0 PJ RJ UJ
Carrier Tape, Number of Components Per Reel and Reel Size:
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in.
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Device
Marking
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for 713 Suffix Device
(Mark Right Side Up)
W
P
© 2006 Microchip Technology Inc. DS21662E-page 13
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
1
p
D
B
n
E
E1
L
c
β
φ
α
A2
A
A1
p1
10501050
b
Mold Draft Angle Bottom
10501050
a
Mold Draft Angle Top
0.500.430.35.020.017.014BLead Width
0.200.150.09.008.006.004
c
Lead Thickness
10501050
f
Foot Angle
0.550.450.35.022.018.014LFoot Length
3.102.952.80.122.116.110DOverall Length
1.751.631.50.069.064.059E1Molded Package Width
3.002.802.60.118.110.102EOverall Width
0.150.080.00.006.003.000A1Standoff
1.301.100.90.051.043.035A2Molded Package Thickness
1.451.180.90.057.046.035AOverall Height
1.90.075
p1
Outside lead pitch (basic)
0.95.038
p
Pitch
55
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES
*
Units
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.
Notes:
EIAJ Equivalent: SC-74A
Drawing No. C04-091
*
Controlling Parameter
Revised 09-12-05
TC2014/2015/2185
DS21662E-page 14 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 15
TC2014/2015/2185
APPENDIX A: REVISION HISTORY
Revision E (May 2006)
• Page 1: Added overtemperature to bullet for over-
current protection in features and general descrip-
tion verbiage.
• Page 3: Added Thermal Shutdown die Tempera-
ture to electrical characteristics table.
• Page 3: Added Thermal Characteristics Table.
• Page 5: Added new section 5.1 and new ver-
biage.
• Page 13: Updated package outline drawing.
Revision D (November 2004)
• Page 2: Changed Absolute Maximum Ratings
from 6.5V to 7.0V.
• Packaging Information: Added package codes for
2.6V and 5.0V options.
• Product Identification System: Added 2.6V and
5.0V to Output voltage options.
Revision C (December 2002)
• Numerous changes
Revision B (May 2002)
• Numerous changes
Revision A (May 2001)
• Original Release of this Document.
TC2014/2015/2185
DS21662E-page 16 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 17
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC2014: 50 mA LDO with Shutdown and VREF Bypass
TC2015: 100 mA LDO with Shutdown and VREF Bypass
TC2185: 150 mA LDO with Shutdown and VREF Bypass
Output Voltage: XX = 1.8V
XX = 2.5V
XX = 2.6V
XX = 2.7V
XX = 2.8V
XX = 2.85V
XX = 3.0V
XX = 3.3V
XX = 5.0V
Temperature Range: V = -40°C to +125°C
Package: CTTR = Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
PART NO. -XX X
TemperatureOutput
Voltage
Device
Examples:
a) TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V,
Tape and Reel.
c) TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,
Tape and Reel.
a) TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V,
Tape and Reel.
c) TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,
Tape and Reel.
a) TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,
Tape and Reel.
Range
XXXX
Package
TC2014/2015/2185
DS21662E-page 18 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 19
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
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intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
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PRO MATE, PowerSmart, rfPIC, and SmartShunt are
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All other trademarks mentioned herein are property of their
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© 2006, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
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DS21662E-page 20 © 2006 Microchip Technology Inc.
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