Datasheet RJJ0315DPA R07DS0388EJ0300 (Previous: REJ03G1920-0200) Rev.3.00 Apr 28, 2011 Silicon P Channel Power MOS FET High Speed Power Switching Features * * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.8 m typ. (at VGS = -10 V) * Pb-free * Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package name: WPAK(3)) 5 6 7 8 D D D D 5 6 7 8 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 3 2 1 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings -30 -20/+10 -35 -140 -35 Unit V V A A A Pch Note2 Tch Tstg 30 150 -55 to +150 W C C Notes: 1. PW 10s, duty cycle 1 % 2. Tc = 25C R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 Page 1 of 6 RJJ0315DPA Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min -30 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.8 6.8 50 4300 930 880 48 14 20 21 45 115 71 Max -- 0.1 -1 -2.5 5.9 10 -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns -- -- -0.87 100 -1.13 -- V ns Test Conditions ID = -10mA, VGS = 0 VGS = -20,+10V, VDS = 0 VDS = -30V, VGS = 0 VDS = -10V, I D = -1mA ID = -17.5A, VGS = -10V Note4 ID = -17.5A, VGS = -4.5VNote4 ID = -17.5A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VDD = -10 V VGS = -4.5 V ID = -35 A VGS = -10V, ID = -17.5A VDD -10V RL = 0.57 Rg = 4.7 IF = -35 A, VGS = 0 Note4 IF =-35 A, VGS = 0 diF/ dt = -100A/s Notes: 4. Pulse test R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 Page 2 of 6 RJJ0315DPA Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 30 20 s -10 -1 at Operation in this area is limited by RDS(on) ion 50 100 150 -0.1 1 shot Pulse -0.1 -1 200 Typical Output Characteristics Typical Transfer Characteristics -50 -3.1 V Pulse Test Drain Current ID (A) -40 -2.9 V -30 -20 -2.7 V -10 -40 -2 -4 -6 -8 VDS = -10 V Pulse Test -30 -20 -10 VGS = -2.5 V 25C Tc = 75C -25C 0 -10 -1 -2 -3 -4 -5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current Pulse Test -240 -160 ID = -20 A -80 -10 A -5 A -4 -8 -12 -16 -20 Gate to Source Voltage VGS (V) R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 Static Drain to Source On State Resistance RDS(on) (m) Drain to Source Voltage VDS (V) -320 0 -100 Drain to Source Voltage VDS (V) -4.5 V -10 V 0 -10 Case Temperature Tc (C) -50 Drain to Source Saturation Voltage VDS(on) (mV) PW = 10 ms Tc = 25 C 0 Drain Current ID (A) 1m er 10 -100 Op Drain Current ID (A) -1000 DC Channel Dissipation Pch (W) 40 100 Pulse Test 30 10 VGS = -4.5 V -10 V 3 1 -1 -3 -10 -30 -100 -300 -1000 Drain Current ID (A) Page 3 of 6 Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 20 10000 Pulse Test Capacitance C (pF) 16 ID = -5 A, -10A, -20 A 12 VGS = -4.5 V 4 -5 A, -10A, -20 A -10 V 0 -25 0 25 50 75 Crss 300 100 VGS = 0 f = 1 MHz -10 -30 -20 Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage -10 -4 -20 -8 VDS -12 VDD = -25 V -10 V -5 V VGS -16 ID = -35 A 0 Coss Drain to Source Voltage VDS (V) 0 -50 1000 Case Temperature Tc (C) VDD = -25 V -10 V -5 V -40 Ciss 10 0 100 125 150 0 -30 3000 30 40 120 80 -20 200 160 -50 Reverse Drain Current IDR (A) 8 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source On State Resistance RDS(on) (m) RJJ0315DPA Pulse Test -10 V -5 V -40 -30 -20 VGS = 0, 5 V -10 0 -0.4 -0.8 -1.2 -1.6 -2.0 Gate Charge Qg (nc) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 1000 100 Tc = -25C 10 25C 75C 1 0.1 -0.1 -0.3 VDS = -10 V Pulse Test -1 -3 -10 -30 -100 Drain Current ID (A) R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 Page 4 of 6 RJJ0315DPA Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C 0.1 0.05 0.03 PDM 2 0.0 lse pu 1 0 t . 0 ho 1s 0.01 10 D= PW T PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Switching Time Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. Rg 90% RL 90% 90% Vin -10 V VDS = -10 V Vout td(on) R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 10% 10% tr td(off) tf Page 5 of 6 RJJ0315DPA Package Dimensions JEITA Package Code RENESAS Code PWSN0008DC-B Previous Code WPAK(3)V MASS[Typ.] 0.075g 0.85Max 5.1 0.2 Unit: mm 0.5 0.15 Package Name WPAK(3) 4.23Typ 1.27Typ +0.1 -0.2 5.9 3.6 0.2 +0.1 -0.3 6.1 3.92 0.22 0.05Max 0Min Stand-off 1.27Typ 0.21Typ 0.5 0.15 0.545Typ 0.7Typ 0.04Min 0.42 0.08 4.90 0.1 (Sn plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Orderable Part Number RJJ0315DPA-00-J5A R07DS0388EJ0300 Rev.3.00 Apr 28, 2011 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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