R07DS0388EJ0300 Rev.3.00 Page 1 of 6
Apr 28, 2011
Datasheet
RJJ0315DPA
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High densit y mounting
• Low on-resistance
RDS(on) = 4.8 mΩ typ. (at VGS = -10 V)
• Pb-free
• Halogen-free
Outline
RENESAS Package code: PWSN0008DC-B
(Package name: WPAK(3))
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
876
5
21
34
G
D
SSS
DDD
4
123
56 7 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS –30 V
Gate to source voltage VGSS -20/+10 V
Drain current ID –35 A
Drain peak current ID(pulse)Note1 –140 A
Body-drain diode reverse drain current IDR –35 A
Channel dissipation Pch Note2 30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10μs, duty cycle ≤ 1 %
2. Tc = 25°C
R07DS0388EJ0300
(Previous: REJ03G1920-0200)
Rev.3.00
Apr 28, 2011
RJJ0315DPA
R07DS0388EJ0300 Rev.3.00 Page 2 of 6
Apr 28, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 μA VGS = –20,+10V, VDS = 0
Zero gate voltage drain current IDSS — — –1 μA VDS = –30V, VGS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10V, I D = –1mA
RDS(on) — 4.8 5.9 mΩ I
D = –17.5A, VGS = –10V Note4
Static drain to source on state
resistance RDS(on) — 6.8 10 mΩ I
D = –17.5A, VGS = –4.5VNote4
Forward transfer admittance |yfs| — 50 — S ID = –17.5A, VDS = –10V Note4
Input capacitance Ciss — 4300 — pF
Output capacitance Coss — 930 — pF
Reverse transfer capacitance Crss — 880 — pF
VDS = –10V
VGS = 0
f = 1MHz
Total gate charge Qg — 48 — nc
Gate to source charge Qgs — 14 — nc
Gate to drain charge Qgd — 20 — nc
VDD = –10 V
VGS = –4.5 V
ID = –35 A
Turn-on delay time td(on) — 21 — ns
Rise time tr — 45 — ns
Turn-off delay time td(off) — 115 — ns
Fall time tf — 71 — ns
VGS = –10V, ID = –17.5A
VDD ≈ –10V
RL = 0.57 Ω
Rg = 4.7 Ω
Body–drain diode forward voltage VDF — –0.87 –1.13 V IF = –35 A, VGS = 0 Note4
Body–drain diode reverse recovery
time trr — 100 — ns
IF =–35 A, VGS = 0
diF/ dt = –100A/µs
Notes: 4. Pulse test
RJJ0315DPA
R07DS0388EJ0300 Rev.3.00 Page 3 of 6
Apr 28, 2011
Main Characteristics
-50
-40
-30
-20
-10
0-2 -4 -6 -8 -10
-50
-40
-30
-20
-10
0-1 -2 -3 -4 -5
10
3
1
-30 -300-1 -10 -100 -1000
-3
-320
-240
-160
-80
0-4 -8 -12 -16 -20
-10 A
100
30
-10 V
-2.9 V
-3.1 V
-10 V
-4.5 V
40
30
20
10
050 100 150 200 -0.1 -1 -10 -100
-10
-100
-1000
-1
-0.1
PW = 10 ms
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by R
DS(on)
1 ms
DC Operation
V
DS
= -10 V
Pulse Test
Tc = 75°C 25°C
–25°C
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Typical Transfer Characteristics
V
GS
= -2.5 V
Pulse Test
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Pulse Test Pulse Test
V
GS
= -4.5 V
I
D
= -20 A
-2.7 V
-5 A
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJJ0315DPA
R07DS0388EJ0300 Rev.3.00 Page 4 of 6
Apr 28, 2011
10
1
0.1 -3 -30-0.1 -1 -10 -100
-0.3
1000
100
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
20
16
12
8
4
–25 0 25 50 75 100 125 150
0
-10 V
-50
-40
-30
-20
-10
0-0.4 -0.8 -1.2 -1.6 -2.0
0 -10 -30
-20
10000
3000
1000
300
100
30
10
Crss
Coss
Ciss
0
-10
-20
-30
-40
0
0
-4
-8
-12
-16
40 80 120 160 200
-20-50
-5 V
-10 V
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
vs. Temperature
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
ID = -5 A, -10A, -20 A
VGS = -4.5 V
Pulse Test
VGS = 0
f = 1 MHz
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
ID = -35 A
VGS
VDS
Pulse Test
VGS = 0, 5 V
-5 A, -10A, -20 A
VDD = -25 V
-10 V
-5 V
VDD = -25 V
-10 V
-5 V
Forward Transfer Admittance |yfs| (S)
VDS = -10 V
Pulse Test
Tc = -25°C
25°C
75°C
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJJ0315DPA
R07DS0388EJ0300 Rev.3.00 Page 5 of 6
Apr 28, 2011
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
1 m 10 m 100 m 1 10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Vin Monitor
D.U.T.
Vin
-10 V
R
L
V
DS
= -10 V
Vout
Monitor
Switching Time Test Circuit Switching Time Waveform
Rg
trtd(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Normalized Transient Thermal Impedance γs (t)
10 μ100 μ
DM
P
PW
T
D = PW
T
θch − c(t) = γs (t) • θch − c
θch − c = 4.17°C/W, Tc = 25°C
RJJ0315DPA
R07DS0388EJ0300 Rev.3.00 Page 6 of 6
Apr 28, 2011
Package Dimensions
4.23Typ
5.9
0.21Typ
0.85Max
6.1
1.27Typ
0.7Typ
0.04Min
+0.1
-0.2
+0.1
-0.3
1.27Typ
0.05Max
0Min
0.545Typ
Stand-off
5.1 ± 0.2
4.90 ± 0.1
0.5 ± 0.15 3.6 ± 0.20.5 ± 0.15
0.42 ± 0.08
3.92 ± 0.22
⎯PWSN0008DC-B WPAK(3)V 0.075g
MASS[Typ.]RENESAS CodeJEITA Package Code Previous Code
(Sn plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Unit: mm
Package Name
WPAK(3)
Ordering Information
Orderable Part Number Quantity Shipping Container
RJJ0315DPA-00-J5A 3000 pcs Taping
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