1
Motorola Thyristor Device Data
 
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for line powered consumer applications such as relay and
lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and
detection circuits. Supplied in surface mount package for use in automated
manufacturing.
Sensitive Gate Trigger Current
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave, RGK = 1000 , TJ = 25 to 110°C) MCR08BT1
MCR08DT1
MCR08MT1
VDRM, VRRM
200
400
600
Volts
On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
I
TSM
10 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
ITSM
10
Amps
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
Peak Gate Power, Forward, TA = 25°C PGM 0.1 Watts
Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.01 Watts
Operating Junction Temperature Range TJ–40 to +110 °C
Storage Temperature Range Tstg –40 to +150 °C
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL260 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1 RθJA 156 °C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy RθJT 25 °C/W
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such
that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR08BT1/D

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995


SCR
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 10
*Motorola preferred devices
REV 1
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2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 K)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 ) TJ = 25°C
TJ = 110°C
IDRM, IRRM
10
200 µA
µA
Maximum On-State Voltage (Either Direction)*
(IT = 1.0 A Peak, TA = 25°C)
V
TM
1.7 Volts
Maximum On-State Voltage (Either Direction)*
(IT = 1.0 A Peak, TA = 25°C)
VTM
1.7
Volts
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 )
I
GT
200
µA
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 )
IGT
200
µA
Holding Current
(VD = 7.0 Vdc,
Initializing Current = 20 mA, RGK = 1000 )
IH 5.0 mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 )
V
GT
0.8 Volts
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7.0 Vdc, RL = 100 )
VGT
0.8
Volts
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 , Exponential Method)
dv/dt 10 V/
µs
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 , Exponential Method)
dv/dt
10
V/µs
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
0.472
12.0
0.096
2.44
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44 0.096
2.44
0.059
1.5 0.059
1.5
0.15
3.8
ǒ
inches
mm
Ǔ
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3
Motorola Thyristor Device Data
PAD AREA = 4.0 cm2, 50
OR 60 Hz HALFWAVE
°
THERMAL RESISTANCE, ( C/W)
2.00 4.0 6.0 8.0 10
TYPICAL
MAXIMUM
4
12 3
MINIMUM
FOOTPRINT = 0.076 cm2
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
L
L
180
°
110
85
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.50.40.30.20.10
50 OR 60 Hz HALFWAVE
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
110
100
90
80
60
50
70
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
110
100
90
80
60
50
40
30
20
70
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
FOIL AREA (cm2)vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
10
1.0
0.1
0.01 4.01.0
110
0.5
0.30.20.10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.5
0.40.30.20.10
0.5
0.40.30.20.10
0
100
90
80
60
50
40
30
20 0.4
70
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
dc
T(tab), MAXIMUM ALLOWABLE
TAB TEMPERATURE ( C)
°
Figure 7. Current Derating
Reference: Anode Tab
180
°
α
= 30
°
60
°
90
°
60
°
120
°
60
°
dc
180
°
120
°
1.0 cm2 FOIL, 50 OR
60 Hz HALFWAVE
dc
2.0 3.0
TYPICAL AT TJ = 110
°
C
MAX AT TJ = 110
°
C
MAX AT TJ = 25
°
C
160
140
120
100
60
40
80
120
°
90
°
60
°
90
°
1.0 3.0 5.0 7.0 9.0
150
130
110
90
70
50
30
α
α =
CONDUCTION
ANGLE
50 OR 60 Hz HALFWAVE
α
α =
CONDUCTION
ANGLE
90
°
α
= 30
°
α
α =
CONDUCTION
ANGLE
180
°
120
°
α
α =
CONDUCTION
ANGLE
α
= 30
°
dc
α
= 30
°
θ
JA
R , JUNCTION TO AMBIENT
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
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4 Motorola Thyristor Device Data
rT, TRANSIENT THERMAL RESISTANCE
NORMALIZED
8020–40 –20 0 40 60 110
8020–40 –20 0 40 60 110
1000
100
1.0
0.7
1000100.1 IGT, GATE TRIGGER CURRENT (
µ
A)
1.0 100 TJ, JUNCTION TEMPERATURE (
°
C)
I
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
VAK = 7.0 V
RL = 140
TJ = 25
°
C10
2.0
1.0
0
TJ, JUNCTION TEMPERATURE, (
°
C)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE, (
°
C)
IH, HOLDING CURRENT
(NORMALIZED)
0.7
0.6
0.5
0.4
8020–40 –20 0 40 60 110
0.3
1.0
0.1
0.01 1000.10.0001
MAXIMUM AVERAGE POWER
P
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
1.0
0.5
0.30.20.10
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.4
0.6
Figure 8. Power Dissipation Figure 9. Thermal Response Device
Mounted on Figure 1 Printed Circuit Board
t, TIME (SECONDS)
dc
180
°
α
= 30
°
60
°
(AV),DISSIPATION (WATTS)
00.001 0.01 1.0 10
GT , GATE TRIGGER CURRENT (
µ
RGK = 1000
, RESISTOR
CURRENT INCLUDED
WITHOUT GATE RESISTOR
VAK = 7.0 V
RL = 140
α
α =
CONDUCTION
ANGLE
VAK = 7.0 V
RL = 3.0 k
RGK = 1.0 k
90
°
120
°
Figure 10. Typical Gate Trigger Voltage
versus Junction Temperature Figure 11. Typical Normalized Holding Current
versus Junction Temperature
Figure 12. Typical Range of VGT
versus Measured IGT Figure 13. Typical Gate Trigger Current
versus Junction Temperature
VAK = 7.0 V
RL = 140
RGK = 1.0 k
A)
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5
Motorola Thyristor Device Data
STATIC dv/dt (V/ S)
µ
HOLDING CURRENT (mA)I ,
H
10000
100
STATIC dv/dt (V/ S)
µ
10,00010 100 1000
1.0
10000
1000
100
10
1.0
0.1
10 100 1000 10,000 100,000
CGK, GATE-CATHODE CAPACITANCE (nF)
0.1 1.0 10 100
RGK, GATE-CATHODE RESISTANCE (OHMS)
100
1.0
0.1 10001.0 RGK, GATE-CATHODE RESISTANCE (OHMS)
10 100 10,000 100,000
10
Figure 14. Holding Current Range versus
Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction
Temperature and Gate-Cathode Termination Resistance
RGK, GATE-CATHODE RESISTANCE (OHMS)
0.01
IGT = 48
µ
A
TJ = 25
°
C
IGT = 7
µ
A
STATIC dv/dt (V/ S)
µ
50
°
75
°
125
°
500 V
100 V
STATIC dv/dt (V/ S)
µ
GATE-CATHODE RESISTANCE (OHMS)
100 1000 10,000 100,00010
5000
500
50
5.0
0.5
1000
500 400 V
TJ = 110
°
C
50 V
50
10
5.0
10000
100
1.0
1000
500
50
10
5.0
TJ = 110
°
C
400 V (PEAK)
RGK = 10 k
RGK = 100
RGK = 1.0 k
10000
100
1.0
1000
500
50
10
5.0
IGT = 5
µ
AIGT = 70
µ
A
IGT = 35
µ
A
IGT = 15
µ
A
110
°
TJ = 25
°
Vpk = 400 V
200 V
300 V
Figure 16. Exponential Static dv/dt versus Peak
Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus
Gate-Cathode Capacitance and Resistance
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
Product Trigger Current Sensitivity
 
6 Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 318E-04
(SOT–223)
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
H
S
F
A
B
D
G
L
4
1 2 3
0.08 (0003)
C
MK
J
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
2 DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3 CONTROLLING DIMENSION: INCH.
_ _ _ _
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MCR08BT1/D
*MCR08BT1/D*