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Application Specific Discretes
A.S.D.™
LCP1511D
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
®
n
DUAL PROGRAMMABLE TRANSIENT SUP-
PRESSOR.
n
WIDE NEGATIVE FIRING VOLTAGE RANGE :
VMGL = -80V max.
n
LOW DYNAMIC SWITCHING VOLTAGES :
VFP and VDGL.
n
LOW GATE TRIGGERING CURRENT :
IGT = 5mA max.
n
PEAK PULSE CURRENT :
IPP = 30A for 10/1000µs surge.
n
HOLDING CURRENT :
IH= 150mA.
FEATURES
SO-8
This device has been especially designed to pro-
tect subscriber line card interfaces (SLIC) against
transient overvoltages.
Positive overloads are clipped with 2 diodes. Neg-
ative surges are suppressed by 2 thyristors, their
breakdown voltage being referenced to
-VBAT through the gate.
This component presents a very low gate
trigge-ring current (IGT) in order to reduce the cur-
rent consumption on printed circuit board during
the firing phase.
Aparticularattentionhasbeengiventotheinternal
wire bonding. The “4-point” configuration ensures
reliable protection, eliminating the overvoltage in-
troduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transients.
DESCRIPTION
October 2003 - Ed: 4
SCHEMATIC DIAGRAM
GND
GND
TIP TIP
RING RING
1
2
3
45
6
7
8
GATE
NC
CCITT K20 : 10/700µs 1kV
5/310µs 25A
VDE 0433 : 10/700µs 2kV
5/310µs 38A (*)
VDE 0878 : 1.2/50µs 1.5kV
1/20µs 40A
I3124 : 0.5/700µs 1kV
0.2/310µs 25A
FCC part 68 : 2/10µs 2.5kV
2/10µs 170A (*)
BELLCORE
TR-NWT-001089 : 2/10µs 2.5kV
2/10µs 170A (*)
(*) with series resistors or PTC.
COMPLIES WITH THE FOLLOWING STANDARDS
TM: ASD is trademarks of STMicroelectronics.
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Symbol Parameter Value Unit
IPP Peak pulse current
(see note 1) 10/1000µs
5/310µs
2/10µs
30
38
170
A
ITSM Non repetitive surge peak on-state current
(F = 50Hz) tp= 10ms
t=1s 8
3.5 A
IGSM Maximum gate current (half sine wave tp = 10ms) 2A
V
MLG
VMGL Maximum voltage LINE / GROUND
Maximum voltage GATE / LINE -100
-80 V
Tstg
TjStorage temperature range
Maximum junction temperature -55to+150
150 °C
TLMaximum lead temperature for soldering during 10s 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Note 1 : Pulse waveform :
10/1000µst
r
=10µst
p
=1000µs
5/310µst
r
=5µst
p
=310µs
2/10µst
r
=2µst
p
=10µs
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 170 °C/W
THERMAL RESISTANCE
Symbol Parameter
IGT Gate triggering current
IHHolding current
IRM Reverse leakage current LINE/GND
IRG Reverse leakage current GATE/LINE
VRM Reverse voltage LINE/GND
VFForward drop voltage LINE/GND
VGT Gate triggering voltage
VFP Peak forward voltage LINE/GND
VDGL Dynamic switching voltage GATE/LINE
VGATE GATE/GND voltage
VLG LINE/GND voltage
COff-state capacitance LINE/GND
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
I
H
I
PP
V
GATE
V
F
I
RM
V
LG
V
RM
I
F
100
50
%IPP
tt
rp
0t
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APPLICATION NOTE
Symbol Test conditions Maximum Unit
VFIF=5A tp=500µs3V
V
FP 10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV Rp=10Ω(see note 1)
2/10µs 2.5kV Rp=62Ω
5
7
12
V
Note 1 : See test circuit 2 for VFP;R
pis the protection resistor located on the line card.
1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb =25°C)
Sym-
bol Test conditions Min. Max. Unit
IGT VGND/LINE = -48V 0.2 5 mA
IHVGATE =-48V (see note 2) 150 mA
VGT at IGT 2.5 V
IRG Tc=25°C VRG =-75V
Tc=70°C VRG =-75V 5
50 µA
VDGL VGATE= -48V (see note 3)
10/700µs 1.5kV Rp=10ΩIPP=30A
1.2/50µs 1.5kV Rp=10ΩIPP=30A
2/10µs 2.5kV Rp=62ΩIPP=38A
10
20
25
V
Note 2 : See the functional holding current (IH) test circuit 2.
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Sym-
bol Test conditions Maximum Unit
IRM Tc=25°C VGATE/LINE = -1V VRM =-75V
Tc=70°C VGATE/LINE = -1V VRM =-75V 5
50 µA
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb =25°C)
1
2
3
4
8
7
6
5
IN
IN
OUT
OUT
TIP
RING
GND
TIP
RING
GATE
NC
Inorder to take advantageofthe“4point” structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
tances of the wiring (Ldi/dt), especially for very fast
transients.
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R
P
VBAT
48V
=
-
D.U.T.
Surge
generator
ThisisaGO-NOGO testwhichallowstoconfirmtheholding current(IH)levelinafunctionaltest circuit.
TEST PROCEDURE :
- Adjust the current level at the IHvalue by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
CC
R
R
TIP
RING
GND
V
P
4
3
2
R2
R1
(V is defined in unload condition)
P
L
1
Pulse (µs) VpC1C2LR
1R
2R
3R
4I
PP Rp
trtp(V) (µF) (nF) (µH) (Ω)(Ω)(Ω)(Ω) (A) (Ω)
10 700 1500 20 200 0 50 15 25 25 30 10
1.2 50 1500 1 33 0 76 13 25 25 30 10
2 10 2500 10 0 1.1 1.3 0 3 3 38 62
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST
TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS
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FUNCTIONAL DESCRIPTION
LINE A
LINE B
D
D
P
P
TIP
RING
-V
BAT
1
1
22C
LINE A PROTECTION :
– For positive surges versus GND, the diode D1
will conduct.
– FornegativesurgesversusGND,theprotection
device P1 will trigger at a voltage fixed by the
-VBAT reference.
LINE B PROTECTION :
– For surges on line B, the operating mode is the
same, D2 or P2 is activated.
It is recommended to add a capacitor (C=220nF)
close to the gate of the LCP, in order to speed up
the triggering.
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
0
1
2
3
4
5
6
7
8
9
10 I (A)TSM
F=50Hz
Tj initial=25°C
t(s)
Surge peak current versus overload duration.
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APPLICATION CIRCUIT : typical SLIC protection concept
RING
RELAY
RING GENERATOR
PTC
PTC
LINE A
LINE B
THBTxxxD
LCP1511D
-V
BAT
SLIC
T
E
S
T
R
E
L
A
Y
220
nF
S
ORDER CODE
LCP 15 1 1 D RL
PACKAGE
1 : SO-8
IH=150 mA
LINE CARD
PROTECTION
VERSION
RL : tape and reel
: tube
DYNAMIC
Package Type Marking
SO-8 LCP1511D CP151D
MARKING
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Informationfurnishedisbelieved to be accurate and reliable. However, STMicroelectronicsassumes no responsibility for the consequences of
useof such information nor for anyinfringement of patents orother rights of third parties whichmay result from its use.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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Weight = 0.08 g.
PACKAGE MECHANICAL DATA
SO-8 Plastic
REF. DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.50 0.020
c1 45° (typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max)
Packaging : Productsuppliedin antistatic tubes or
tape and reel .
